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  • 1
    Electronic Resource
    Electronic Resource
    Negative photoconductivity due to carrier drag in GaAs/AlGaAs quantum wells (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2097-2099 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Negative photoconductivity caused by "carrier drag'' is experimentally verified for the first time. In p-modulation-doped GaAs/AlGaAs quantum wells carrier drag, leading to "negative absolute mobility'' of injected minority electrons, results in a decrease of the total in-plane current in the quantum wells. The temperature dependence of the measured differential photoconductivity quantitatively agrees with the expected behavior due to the effect of electron-hole scattering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101175
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  • 2
    Electronic Resource
    Electronic Resource
    Time-resolved measurement of tunneling and energy relaxation of hot electrons in GaAs/AlGaAs double quantum well structures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1996-1998 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The tunneling and cooling times of photoexcited hot electrons in AlGaAs/GaAs double (one narrow and the other wide) quantum well structures have been measured using photoluminescence excitation correlation spectroscopy. The tunneling time was of the order of 200 ps for a 60 A(ring) barrier. The tunneling is the indirect process assisted by the emission of optical phonons. The relaxation time of electrons as a function of the kinetic energy shows a threshold for cooling via the emission of optical phonons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102144
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  • 3
    Electronic Resource
    Electronic Resource
    Subpicosecond photoluminescence from radiation-damaged Ga0.47In0.53As (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 460-462 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The luminescence of photoexcited carriers far above the band gap of Ga0.47In0.53As is studied with subpicosecond time resolution. In undamaged material the luminescence decays with characteristic times of 2–4 ps in the energy range between 1.9 and 1.4 eV, due to the rapid energy relaxation of electrons and holes far above the band edges. In radiation-damaged (He+ bombarded) material, luminescence decay times as short as 0.9 ps are observed. The luminescence spectra give evidence for extreme nonequilibrium distributions of the photoexcited carriers, caused by the ultrafast recombination, which—in radiation-damaged samples—is a faster process than energy relaxation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101852
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Drift time limited hydrogenated amorphous silicon detectors with picosecond response times (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3888-3890 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have utilized rf glow discharge hydrogenated amorphous silicon (a-Si:H) to build detectors in sandwich geometry with response times in the ps region. Analyzing the shape of the pulses recorded with a sampling head, carrier relaxation times and drift times were obtained. A transition from relaxation time limited to drift time limited response was observed by increasing the bias voltage. Carrier relaxation times and drift mobilities were determined as 460 ps and 0.2 cm2/V s, respectively, the shortest drift time limited response was below 80 ps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344992
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  • 5
    Electronic Resource
    Electronic Resource
    Time-resolved luminescence from the AlGaAs layer of AlGaAs/GaAs heterostructures (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4827-4831 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The luminescence of optically injected carriers in the thin AlGaAs layer of AlGaAs/GaAs single heterostructures is studied with femtosecond time resolution by using a "population-correlation'' technique. We observe lifetimes of the combined electron-hole populations of 5–11 ps depending on the layer thickness of the different samples. We find that the dominating process for carrier transfer is "thermal'' emission of carriers limited by ambipolar diffusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343798
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  • 6
    Electronic Resource
    Electronic Resource
    Surface plasmon-enhanced photoluminescence from a single quantum well (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1577-1579 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have dramatically enhanced the photoluminescence intensity emitted from a single quantum well (typically by factors of 3–6) by covering the sample surface with a thin semitransparent metallic film. Using a photolithographically prepared gold grating, we show that this enhancement is due to the excitation of surface plasmons on the metal. By selectively turning off the surface plasmon excitation via sample or light polarization rotation, the enhancement can be suppressed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124759
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  • 7
    Electronic Resource
    Electronic Resource
    Single heterostructures for optical transport experiments (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1815-1817 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We introduce a new GaAs/AlxGa1−xAs single heterostructure, which allows local optical injection of a one-component confined plasma. The heterojunction is placed in the undoped region of a p-i-n structure, which provides a high built-in electric field for the separation of injected electrons and holes, as well as for the two-dimensional confinement of electrons. A time-of-flight measurement of the majority-electron drift velocity at room temperature is demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98532
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  • 8
    Electronic Resource
    Electronic Resource
    Spectral photoconductivity in n-modulation-doped GaAs/AlGaAs quantum well structures (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 106-108 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The in-plane photoconductivity of n-modulation-doped quantum well structures of GaAs/AlGaAs is experimentally studied as a function of the incident photon energy. Negative photoconductivity with surprising dependences on background illumination, temperature, and electric field is observed for photon energies slightly below the band gap of GaAs. The effect may be due to optical filling of ionized deep donors in AlGaAs as well as to an optical backgating effect. High positive photoconductivity is present above the band gaps—in contrast to theoretical expectations from previous optical transport experiments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98638
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  • 9
    Electronic Resource
    Electronic Resource
    Extremely high negative photoconductivity in p-modulation-doped GaAs quantum wells (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 801-803 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In p-modulation-doped quantum wells of GaAs/AlGaAs extremely high negative photoconductivity is observed at low temperatures. The in-plane sheet resistance can be increased by a factor of more than 60 with illumination of less than 1 W/cm2. Spectral analysis shows that the effect is mainly due to hole trapping in the potential minima of AlGaAs and subsequent recombination of minority electrons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99288
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  • 10
    Electronic Resource
    Electronic Resource
    Ultrafast reflectivity changes in photoexcited GaAs Schottky diodes (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2778-2780 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transient reflectivity of GaAs Schottky diodes is measured by femtosecond time resolved pump-probe experiments. The measured reflectivity for photon energies near the band gap reveals transient quasioscillatory behavior with frequencies up to 5.5 THz. The changes of the reflectivity are due to extremely fast changes of the carrier density within the depletion layer. We interpret the observed oscillatory signal as coherent plasma oscillations. Ensemble Monte Carlo simulations for the scenario agree well with the observed plasmon frequencies. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116604
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