Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
62 (1993), S. 3108-3110
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The temperature dependence of the growth kinetics on V-grooved substrates is studied by computer simulation, with attention focused upon the evolution of the morphology. We find a distribution of growth rates on GaAs(001) at high temperatures due to surface diffusion of adatoms from one facet to the other. However, at low temperatures, where surface migration processes are less important, growth on these substrates proceeds in a shape-preserving manner. Comparison with scanning microprobe reflection high-energy electron-diffraction intensity oscillations on GaAs(001) near (111) surfaces shows that our results are in qualitative agreement with observed behavior.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.109153
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