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  • 1
    Electronic Resource
    Electronic Resource
    Degradation of inversion layer electron mobility due to interface traps in metal-oxide-semiconductor transistors (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3252-3257 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Degradation of inversion layer electron mobility during Fowler–Nordheim electron injection has been investigated using n-channel metal-oxide-semiconductor transistors. The change of the reciprocal effective mobility, Δ(1/μEFF), has been found to be linearly related to the generated interface trap density, ΔNit, at a given effective electric field normal to the Si/SiO2 interface. The effect of trapped charges in the oxide on the mobility degradation is rather insignificant, which is attributed to the location of trapped charges from the Si/SiO2 interface. The dependence of mobility degradation on inversion layer electron density has also been explained using a transport theory based on two-dimensional electron gas. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360013
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  • 2
    Electronic Resource
    Electronic Resource
    Spatial distribution of trapped holes in SiO2 (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4738-4742 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spatial distribution of trapped holes and the position of charge centroid in the insulating layer of a metal-oxide-semiconductor (MOS) structure are determined after substrate hot-hole injection experiments using MOS transistors with very thin oxides. Considerable hole trapping is observed even in samples with extremely thin (∼4.6 nm) oxide film. Most of the trapped holes exist between 2–6 nm from the Si/SiO2 interface. Trapped holes are found to be distributed in the form of an exponentially decaying function of distance from the same interface. Charge centroid is determined to be located at 3.2 nm from the Si/SiO2 interface for the oxide thickness range used in this study.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357242
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  • 3
    Electronic Resource
    Electronic Resource
    A model of impact ionization due to the primary hole in silicon for a full band Monte Carlo simulation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7718-7725 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The rate of impact ionization due to the primary hole in silicon is numerically derived from pseudo-wave-functions and realistic energy band structure based on a nonlocal empirical pseudopotential method including the spin-orbit interaction. The calculated impact-ionization rate SII [s−1] is well fitted to an analytical formula with a power exponent of 3.4, indicating a soft threshold of the impact ionization rate: SII [s−1]=1.14×1012 [s−1 eV−3.4]×(cursive-epsilon [eV]−1. 49 [eV])3.4, where cursive-epsilon [eV] is the energy of the primary hole relative to the valence band edge. The soft threshold originates from the complexity of the silicon band structure. The calculated impact-ionization rate shows strong anisotropy at low hole energies (cursive-epsilon〈3 eV), while it becomes isotropic at high hole energies, indicating the isotropy of the joint density of states at high energies. Numerical calculation also makes it clear that average energies of secondary generated carriers cursive-epsilon¯ depend linearly on primary hole energies at the moment of their generation. The calculated average energies of secondary generated holes cursive-epsilon¯(hole) [eV] and electrons cursive-epsilon¯(electron) [eV] are well fitted to linear functions of primary hole energy cursive-epsilon [eV]: cursive-epsilon¯(hole) [eV]=3.75×10−1 cursive-epsilon [eV]−4.76×10−1 [eV],cursive-epsilon¯(electr on) [eV]=−3.14×10−1 cursive-epsilon [eV]−8.60×10−1 [eV]. The standard deviations of secondary generated carriers are also presented. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362375
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  • 4
    Electronic Resource
    Electronic Resource
    Study of interface roughness dependence of electron mobility in Si inversion layers using the Monte Carlo method (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 911-916 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electron mobility in the inversion layer of a metal–oxide semiconductor field effect transistor formed on the (100) silicon surface is calculated by using a Monte Carlo approach which takes into account size quantization, acoustic phonon scattering, intervalley phonon scattering and surface roughness scattering. Degeneracy is also considered because it is important at higher normal effective fields (high gate voltages). The main emphasis is placed on the influence of the specific autocovariance function, used to describe the surface roughness, on the electron mobility. Here we compare the mobilities obtained using exponential and Gaussian autocovariance functions. It is found that the electron mobility calculated with roughness scattering rates based on the exponential function shows good agreement with experiments. The effect of the degeneracy and screening on the roughness scattering is also discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360871
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  • 5
    Electronic Resource
    Electronic Resource
    Generation and relaxation phenomena of positive charge and interface trap in a metal-oxide-semiconductor structure (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4494-4503 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Positive charge and interface trap generation during substrate hot-hole injection into the insulating layer of a metal-oxide-semiconductor (MOS) structure is investigated using p-channel MOS transistors with very thin oxide thicknesses in the range from 4.6 to 15 nm. Positive charge fluence in the oxide due to hole trapping is found to saturate for an injected hole density over 1016 cm−2. A model based on first-order trapping kinetics is presented to describe hole trapping phenomena including the dispersive nature of capture cross-section. A universal relationship between hole trapping and interface trap generation is observed experimentally, which implies direct involvement of holes in the formation of interface traps at the Si/SiO2 interface. A generation mechanism related with hole trapping in the oxide is discussed. Postinjection relaxation of the trapped holes showed strong dependence on both oxide field magnitude and polarity. Detrapping under positive gate voltage is consistent with the concept of direct tunneling discharge, while negative gate voltage relaxation occurs due to electron injection by Fowler–Nordheim mechanism. A new phenomena of time dependent annealing of interface traps has been observed after the end of hole injection, which contradicts the reports of time delayed interface trap generation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359445
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  • 6
    Electronic Resource
    Electronic Resource
    Stripe width dependence of oxidation-enhanced diffusion in submicron local oxidation of silicon structures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4846-4852 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxidation enhanced diffusion (OED) of phosphorus under very narrow oxidized region is investigated. The OED effect is found to depend on the oxidized region width for below 4–5 μm, i.e., the enhancement of phosphorus diffusivity decreases with decreasing the oxidized region width. In order to clarify the mechanism, two dimensional numerical simulations are carried out using various models for silicon self-interstitial generation at the Si/SiO2 interface during thermal oxidation. A series of OED observations is well simulated by using the new model in which the self-interstitial concentration at the oxidized interface is determined by the balance of (a) the interstitial generation due to oxidation reaction at the interface, (b) the kinetics of surface regrowth, and (c) the flux of interstitials into previously formed oxide. Effective surface regrowth rate constants for self-interstitials at the nonoxidized interface are then extracted. It is found that the surface regrowth rate constants in local oxidation of silicon structures are considerably large compared with those extracted from back side oxidation experiments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349025
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  • 7
    Electronic Resource
    Electronic Resource
    Theoretical model for self-interstitial generation at the Si/SiO2 interface during thermal oxidation of silicon (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2723-2727 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a grating pattern of parallel nitride and oxide stripes on the silicon surface, self-interstitial concentration at the Si/SiO2 interface is accurately determined by means of oxidation-induced stacking fault growth observation. The results show that the interstitial concentration at the interface is found to be determined by the oxidation of interstitials in the oxide rather than self-interstitial diffusion in bulk silicon. A newly proposed physical model incorporates the balance among the generation rate of interstitials at the oxidizing interface, the annihilation rate of interstitials due to surface regrowth, and the rate at which they diffuse into the oxide and react with incoming oxidants. For higher oxidation rates, the model predicts that the interstitial concentration follows a 0.5 power dependence on oxidation rate. For slower oxidation rates, the concentration at the interface becomes lower than the equilibrium interstitial concentration, leading to the oxidation-retarded diffusion of dopants with a high fractional interstitialcy diffusion component.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342759
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  • 8
    Electronic Resource
    Electronic Resource
    Moment expansion approach to calculate impact ionization rate in submicron silicon devices (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5444-5448 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method to calculate the impact ionization rate in submicron silicon devices is developed using both an average energy and an average square energy of electrons. The method consists of an impact ionization model formulated with the average energy and conservation equations for the average square energy in the framework of an energy transport model. Parameters for the transport equations are extracted in such a way that calculated moments based on these equations match Monte Carlo simulation results. The impact ionization generation rate in an n+nn+ structure calculated with this method agrees well with the results obtained from Monte Carlo simulation. The new method is also applied to a submicron n-MOSFET. The calculated distribution of the generation rate is found to be quite different from the results based on a conventional method. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362732
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  • 9
    Electronic Resource
    Electronic Resource
    Observation of resonant optical–phonon assisted tunneling in asymmetric double quantum wells (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 962-965 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser Raman microscope measurements in asymmetric double quantum wells with coupled narrow and wide quantum wells were performed to observe the nonequilibrium longitudinal-optical (LO) phonons that are generated by electrons during the phonon assisted tunneling. Both the Stokes and the anti-Stokes intensities show maxima at a certain applied voltage, where the calculated subband spacing between the wide and the narrow quantum well states is found to be equal to the LO phonon energy. This fact indicates that the population of nonequilibrium LO phonons becomes maximum when resonant LO phonon scattering occurs. A strong reduction in the photoluminescence intensity for the narrow quantum well is also observed at the same bias condition. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366784
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  • 10
    Electronic Resource
    Electronic Resource
    Oxide thickness dependence of interface trap generation in a metal-oxide-semiconductor structure during substrate hot-hole injection (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2537-2539 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxide thickness dependence of interface trap generation in a metal-oxide-semiconductor (MOS) structure is investigated using uniform hot-hole injection into the gate oxides of p-channel MOS transistors with very thin oxide thicknesses. Significant dependence of interface trap generation on oxide thickness (tox) is found for very thin oxides and the dependence disappears for tox≥8 nm. A universal relationship between hole trapping in the oxide bulk and interface trap generation at the Si/SiO2 interface is observed experimentally. The experimental results suggest that interface trap generation is a process involving hole trapping in the oxide bulk, rather than a pure interfacial process. No oxide thickness dependence of interface trap generation for thicker oxides (tox≥8 nm) is in agreement with previous reports and the overall dependence can consistently be explained with the help of the spatial distribution of trapped holes in the oxide. In contrast to the reports describing delayed interface trap formation, we observed oxide field-dependent annealing of the generated interface traps after the end of hole injection.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110451
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