Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Spectroscopic ellipsometry and thermoreflectance of GaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3380-3386 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectroscopic-ellipsometry (SE) and thermoreflectance (TR) spectra of GaAs are presented. Measurements are carried out on the same bulk sample in the 1.2–5.6 eV photon-energy range at room temperature. These spectra are analyzed based on a simplified model of the interband transitions. Results are in satisfactory agreement with the experimental SE and TR data over the entire range of photon energies. The fact definitely links the temperature-induced change in the dielectric function (TR) to the first derivative of the pseudodielectric function (SE). It is also concluded that the broadening terms cannot be neglected in the analysis of TR spectra. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359966
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Optical constants of ZnSxSe1−x ternary alloys (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7470-7475 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The methods for calculation of the various optical constants in ZnSxSe1−x ternary alloys are presented. The model used is based on an interpolation scheme, and the effects of alloy composition are properly taken into account in the calculation. The present model reveals distinct structures in the optical spectra at energies of the E0, E0+Δ0, E1, and E1+Δ1 gaps. The optical constants and properties considered here are the complex dielectric constant ε=ε1+iε2, complex refractive index n*=n+ik, absorption coefficient α, and normal-incidence reflectivity R. The refractive indices in the transparent region are also presented for a variety of waveguiding device applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356617
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Ellipsometric and thermoreflectance spectra of (AlxGa1−x)0.5In0.5P alloys (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 439-445 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectroscopic-ellipsometry (SE) and thermoreflectance (TR) spectra of (AlxGa1−x)0.5In0.5P quaternary alloys are presented. Both measurements are carried out on the same samples in the 1–6 eV photon-energy range at room temperature. These spectra are analyzed based on a simple model of the interband transitions. The results are in satisfactory agreement with the experimental SE and TR data over the entire range of photon energies. The composition dependence of the interband critical-point and indirect-band-gap energies is also discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360850
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Optical properties of the bulk amorphous semiconductor ZnIn2Te4 (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3705-3708 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The bulk amorphous-like (a-) semiconductor, a-ZnIn2Te4, is prepared by the melt-quench technique. The pseudodielectric-function spectra, 〈ε(E)〉=〈ε1(E)〉+i〈ε2(E)〉, of a-ZnIn2Te4 are measured by spectroscopic ellipsometry in the 1.2–5.3 eV photon-energy range at room temperature. The measured 〈ε(E)〉 spectra strongly resemble those of amorphous tetrahedrally bonded semiconductors. These spectra are analyzed using a simplified model of the interband optical transitions. Dielectric-related optical constants, such as the complex refractive index, absorption coefficient, and normal-incidence reflectivity, of a-ZnIn2Te4 are also been presented. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371282
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Photoreflectance study in the E0 and E0+Δ0 transition regions of GaP (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4904-4909 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance (PR) measurements have been carried out to determine the E0 and E0+Δ0 critical-point (CP) parameters in GaP at temperatures between 12 and 300 K using a He–Cd laser as modulation light source. The measured PR spectra provide distinct structures at ∼2.75–2.85 eV (E0) and ∼2.85–2.95 eV (E0+Δ0). These structures are successfully explained by a three-dimensional (3D) one-electron line shape plus an excitonic shape. The temperature dependence of the 3D CP and excitonic parameters (energy, amplitude, and broadening parameter) have been determined and analyzed using the Varshni equation and an empirical expression of Bose–Einstein type. The rapid decrease in the PR signal amplitudes is observed at T〈100 K and can be explained by the weakened surface electric fields due to carrier freezing at such low temperatures. The 3D exciton binding energy at the E0/(E0+Δ0) edges of GaP has also been determined to be 13 meV. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1461067
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Photoreflectance spectroscopy of wurtzite CdS (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1793-1798 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance (PR) spectra have been measured to determine the lowest direct-band edge E0α (α=A, B, and C) of wurtzite CdS single crystal in the temperature range T=13–300 K for both E⊥c and E(parallel)c polarizations. The measured PR spectra can be interpreted by the three-dimensional (3D) excitonic plus one-electron line shapes over the entire temperature range. The temperature dependence of the excitonic and critical-point parameters (energy, amplitude, and broadening parameter) have been determined and analyzed using the Varshni [Physica (Amsterdam) 34, 149 (1967)] equation and an analytical four-parameter expression recently developed for the explanation of the band-gap shrinkage effect in semiconductors. The 3D- exciton binding energies have also been determined to be 27 (A), 31 (B), and 30 meV (C), respectively. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1493655
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Observation of resonant optical–phonon assisted tunneling in asymmetric double quantum wells (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 962-965 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser Raman microscope measurements in asymmetric double quantum wells with coupled narrow and wide quantum wells were performed to observe the nonequilibrium longitudinal-optical (LO) phonons that are generated by electrons during the phonon assisted tunneling. Both the Stokes and the anti-Stokes intensities show maxima at a certain applied voltage, where the calculated subband spacing between the wide and the narrow quantum well states is found to be equal to the LO phonon energy. This fact indicates that the population of nonequilibrium LO phonons becomes maximum when resonant LO phonon scattering occurs. A strong reduction in the photoluminescence intensity for the narrow quantum well is also observed at the same bias condition. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366784
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...