Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
72 (1992), S. 2797-2801
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Residual donor and acceptor species were studied in a series of high purity n-type InP epilayers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine and trimethylindium (TMIn). Over the entire range of growth conditions, the residual donors were found to be S and Si using magnetophotoluminescence spectroscopy. These designations agreed with the observed dependence of the transport data on growth conditions. Residual levels of Zn and Mg or Be acceptors were identified by photoluminescence (PL) measurements at low excitation powers. C acceptors were below the limits of detection by PL, as in other studies using phosphine and TMIn.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.352344
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