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  • 1
    Electronic Resource
    Electronic Resource
    Effect of Additive Oxide Amount on Gas Pressure Sintering of Silicon Nitride (1992)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 25-26 (Jan. 1992), p. 403-410 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/25/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.25-26.403.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Superplastic Deformation of Nano-Sized α-Sialon Ceramics (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 336-338 (Apr. 2007), p. 1001-1004 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: In previous report, we succeeded in preparing dense nano-sized ceramics with the compositionof Y- α-sialon (m=1.35, n=0.675) by high-energy mechanical milling followed by spark plasma sintering.The superplastic deformation of the obtained nano-ceramics was studied in this report. A good ductility ofthe nano-sized ceramics has been confirmed, which arised from the nano-sized grains and large amount oftransient liquid phase. The effects of deformation on the phase and microstructural evolution were alsostudied. The nano-sized grains promoted the formation of elongated α-sialon grains during post-annealingat 1850oC for 3 h, which would strengthen and toughen the deformed ceramics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/53/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.336-338.1001.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    High-Temperature Properties of Silicon Nitride with Lu-Si-O-N Grain Boundary Phases (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 317-318 (Aug. 2006), p. 425-428 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: High-temperature properties of silicon nitride ceramics with Lu-silicon-oxynitride grainboundary phases were investigated. Si3N4 powder with 1.2 mol% (SN12) and 4.8 mol% (SN48) ofLu2O3 were gas-pressure hot-pressed at 1950°C for 2 h under 20 MPa in 1 MPa N2. SN12 consisted ofelongated β-Si3N4 and a secondary phase, Lu4Si2O7N2, whilst SN48 consisted of elongated β-Si3N4and Lu4Si2O7N2 + Lu2SiO5. At 1500°C and 1600°C, the stress-strain curve of SN48 was nonlinear,whilst that of SN12 was linear, indicating that SN12 broke as a brittle fracture at these temperatures.SN12 had excellent oxidation resistance and weight gain during the oxidation at 1500°C for 1000 hwas 4 g/m2. Creep lifetime of SN12 at 1500°C under tensile stress of 137 MPa exceeded 1678.5 h
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/51/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.317-318.425.pdf
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  • 4
    Electronic Resource
    Electronic Resource
    Fabrication of α-Sialon Nano-Ceramics (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 317-318 (Aug. 2006), p. 629-632 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Y- α-sialon (m=1.35, n=0.675) ceramics were prepared by high-energy mechanicalmilling followed by spark plasma sintering. The milling promoted not only liquid-phase sintering,but also phase transformation from β-Si3N4 to α-sialon. Under the same holding time of 5 min,milled powder could be completely densified at 1500oC, which is about 250oC lower than thatrequired for as-received powder. The temperature where the phase transformation finished was1600oC and 1750oC for milled and as-received powder, respectively. The grain size of obtaineddense ceramics from milled powder was significantly decreased. Nano-sized dense ceramics havebeen obtained by sintering the milled powder at 1500oC for 5 min. Although 100 % α-sialon has notbeen achieved, the nano-sized ceramics can be used for superplastic deformation, taking advantageof small grain size and large amount of transient liquid phase
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/51/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.317-318.629.pdf
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  • 5
    Electronic Resource
    Electronic Resource
    Luminescence Properties of Rare-Earth Doped α-SiAlONs (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 317-318 (Aug. 2006), p. 797-802 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Rare-earth doped Ca-α-SiAlON phosphors, with the compositions of(Ca1-3/2xREx)m/2Si12-m-nAlm+nOnN16-n (RE = Ce, Sm, Eu, Tb, Yb and Dy, 0.5 ≤ m = 2n ≤ 3.0), wereprepared by reaction at 1700oC for 2h under 10 atm N2. The concentration of rare earths varied from 3to 30 at% with respect to Ca. The photoluminescence properties of the powders were investigated atroom temperature. The results show that (i) strong visible emissions are observed in rare-earth dopedCa-α-SiAlONs; (ii) the emission properties can be optimized by tailoring the activator concentrationand the composition of the α-SiAlON host crystal; and (iii) the yellow Eu2+-doped Ca-α-SiAlONphosphors can be used in warm white LEDs
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/51/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.317-318.797.pdf
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  • 6
    Electronic Resource
    Electronic Resource
    Strength Retention in Hot-Pressed Si3N4 Ceramics with Lu2O3 Additives after Oxidation Exposure in Air at 1500°C (2002)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 85 (2002), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The effect of oxidation exposure on room-temperature flexural strength was examined in 3.33- and 12.51-wt%-Lu2O3-containing hot-pressed Si3N4 ceramics exposed to air at 1500°C for up to 1000 h. After oxidation exposure, the room-temperature strength of the ceramics was degraded, and strength retention decreased with time at temperature, dependent on the amount of additive. The retention in room-temperature strength displayed by the two compositions after 1000 h of oxidation exposure was 75%–80%. The degradation in strength was attributed to the formation of new defects at and/or near the interface between the oxide layer and the Si3N4 bulk during oxidation exposure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2002.tb00319.x
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  • 7
    Electronic Resource
    Electronic Resource
    Crystal Structure of Lu4Si2O7N2 Analyzed by the Rietveld Method Using the Time-of-Flight Neutron Powder Diffraction Pattern (2002)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 85 (2002), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The crystal structure of a lutetium silicon oxynitride (Lu4Si2O7N2) was analyzed by the Rietveld method using time-of-flight (TOF) neutron powder diffraction data. The compound crystallizes in a monoclinic cell, space group P21/c (No. 14-1) with a= 7.4243(1), b= 10.2728(1), c= 10.6628(1) Å, and β= 109.773(1)° at 297 K. One nitrogen atom in Lu4Si2O7N2 occupies the bridging site between the two Si atoms, and the other one is statistically situated at the terminal sites of Si2O5N2 ditetrahedra. In the local structure, Si2O5N2 ditetrahedra consist of SiO3N and SiO2N2 tetrahedral units sharing the N atom. Lu atoms are in sixfold, sevenfold (×2) and eightfold coordinations of O/N atoms. X-ray powder diffraction data were also analyzed with the model obtained by the neutron diffraction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2002.tb00406.x
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  • 8
    Electronic Resource
    Electronic Resource
    Hot-Pressed Silicon Nitride with Lu2O3 Additives: Oxidation and Its Effect on Strength (2003)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 86 (2003), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The oxidation behavior and effect of oxidation on room-temperature flexural strength were investigated for hot-pressed Si3N4 ceramics, with 3.33 and 12.51 wt% Lu2O3 additives, exposed to air at 1400° and 1500°C for up to 200 h. Parabolic oxidation behavior was observed for both compositions. The oxidation products consisted of Lu2Si2O7 and SiO2. The Lu2Si2O7 grew out of the surface silicate in preferred orientations. The morphology of oxidized surfaces was dependent on the amount of additive; Lu2Si2O7 grains in the 3.33 wt% composition appeared partially in a needlelike type, compared with a more equiaxed type exhibited in the 12.51 wt% case. The high resistance to oxidation shown for both compositions was attributed to the extensive amounts of crystalline, refractory secondary phases formed during the sintering process. Moreover, after 200 h of oxidation at 1400° and 1500°C, the strength retention displayed by the two compositions was 93%–95% and 85%–87%, respectively. The strength decrease was associated with the formation of new defects at the interface between the oxide layer and the Si3N4 bulk.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2003.tb03579.x
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  • 9
    Electronic Resource
    Electronic Resource
    Nonequiaxial Grain Growth and Polytype Transformation of Sintered α-Silicon Carbide and β-Silicon Carbide (2003)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 86 (2003), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: α(6H)- and β(3C)-SiC powders were sintered with the addition of AlB2 and carbon. α-SiC powder could be densified to ∼98% of the theoretical density over a wide range of temperatures from 1900° to 2150°C and with the additives of 0.67–2.7 mass% of AlB2 and 2.0 mass% of carbon. Sintering of the β-SiC powder required a temperature of 〉2000°C for densification with these additives. Grains in the α-SiC specimens grew gradually from spherical-shaped to plate-shaped grains at 2000°C; the 6H polytype transformed mainly to 4H. On the other hand, grains in the β-SiC largely grew at 〉2000°C; the 3C polytype transformed to 4H, 6H, and 15R. The stacking faults introduced in grains were denser in β-SiC than in α-SiC. The rapid grain growth in the β-SiC specimen was attributed to polytype transformation from the unstable 3C polytype at the sintering temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2003.tb03638.x
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  • 10
    Electronic Resource
    Electronic Resource
    Spark Plasma Sintering of Tungsten Bronze Sr2−xCaxNaNb5O15 (x= 0.1) Piezoelectric Ceramics: II, Electrical Properties (2002)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 85 (2002), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Sr2−xCaxNaNb5O15 (SCNN, x= 0.1) piezoelectric ceramics with tetragonal tungsten bonze structure were successfully produced by spark plasma sintering. Part I of this study presented the sintering of these highly dense ceramics. The current work investigates their electrical (dielectric, ferroelectric, and piezoelectric) properties and relates them to the sintering parameters (temperature, heating rate, and soaking time) and crystallographic orientation. The results show that the electrical properties of SCNN are enhanced with increasing heating rate and soaking time. Dielectric study reveals a less pronounced diffuse phase transition of SCNN. Anisotropic electrical properties were observed as a result of the preferred crystallographic orientation in the sintered ceramics. The samples sintered at 1200°C for 30 min exhibited the highest electrical properties, and showed the following piezoelectric properties when poled across the direction perpendicular to the pressing direction: electromechanical planar and thickness coupling coefficients of kp= 9.5% and kt= 39.6%, and piezoelectric constant of d33= 121 pC/N (∼45% of the single-crystal value).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2002.tb00521.x
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