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  • 1
    Electronic Resource
    Electronic Resource
    Hot hydrogen atoms reactions of interest in molecular evolution and interstellar chemistry (1974)
    Springer
    Journal of molecular evolution 4 (1974), S. 157-172 
    Details
    ISSN: 1432-1432
    Keywords: Hot Hydrogen Atom Reactions ; Molecular Evolution ; Interstellar Chemistry
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Summary Hot hydrogen atoms which are photochemically generated initiate reactions among mixtures of methane, ethane, water and ammonia, to produce ethanol, organic amines, organic acids, and amino acids. Both ethanol and ethyl amine can also act as substrates for formation of amino acids. The one carbon substrate methane is sufficient as a carbon source to produce amino acids. Typical quantum yields for formation of amino acids are approximately 2–4 · 10-5. In one experiment, 6 protein amino acids were identified and 8 non-protein amino acids verified utilizing gas chromatography-mass spectroscopy. We propose that hot atoms, especially hydrogen, initiate reactions in the thermodynamic non-equilibrium environment of interstellar space as well as in the atmospheres of planets.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01732020
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  • 2
    Electronic Resource
    Electronic Resource
    Characteristics of DNA Comet, Photostimulated Luminescence, Thermoluminescence and Hydrocarbon in Perilla Seeds Exposed to Electron Beam (2002)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 67 (2002), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: : Detection characteristics of perilla seeds exposed to electron beam doses of 0 to 2 kGy were investigated. DNA comet assay, photostimulated luminescence (PSL) and thermoluminescence (TL) measurements, and hydrocarbon determinations by GC-MS were carried out. The irradiated samples showed comets with longer tails (152 ± 6 mm) than did nonirradiated samples (35 ± 11 mm). PSL values (photon counts) for the irradiated samples were more than 7865; whereas those of nonirradiated samples were less than 294. TL ratios (Glow 1/Glow 2) obtained from nonirradiated samples were less than 0.01 and above 0.48 from irradiated ones. The prominent radiation-induced hydrocarbons were 16:2, 16:3, 17:1, and 17:2, of which 16:2 was the most abundant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.2002.tb08769.x
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  • 3
    Electronic Resource
    Electronic Resource
    Photochemistry of acetylene, hydrogen cyanide, and mixtures (1983)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 87 (1983), S. 163-166 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100224a035
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  • 4
    Electronic Resource
    Electronic Resource
    X-ray photoemission studies of W 4f core levels of electrochromic HxWO3 films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 9343-9348 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using x-ray photoelectron spectroscopy (XPS), W 4f core level spectra of electrochromic HxWO3 films have been investigated as a function of the injected charge. W 4f peaks become broader with increasing injected charge. The line shape analysis of W 4f XPS spectra of amorphous HxWO3 films reveals that each spin-orbit split component consists of two peaks. It is also found that, as the injected charge increases, the intensity of the low binding energy (BE) peaks, the asymmetry factor of core lines, and the intrinsic lifetime width increase systematically. Composite structures of W 4f peaks have been attributed to the existence of the different final states, screened by different numbers of W 5d electrons. The low BE peaks are considered to correspond to the locally screened final states, with one more W 5d electrons than in the ground state, which arise from midgap state conduction electrons near EF. There is also a possibility that a mixture of fine scale phases contributes to composite structures and broader linewidths in HxWO3. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362611
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  • 5
    Electronic Resource
    Electronic Resource
    Study of interdiffusion in Pd/Cu multilayered films by Auger depth profiling (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7825-7828 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In thin films, diffusion phenomena play an important role for the growth process, and in the understanding of the mechanical, electrical and magnetic properties. The change in the concentration profile due to the interdiffusion by annealing was investigated using Auger electron spectroscopy depth-profiling technique on Pd/Cu multilayered films. It was observed that the initial concentration distributions, which were almost rectangular in the unheated samples, were changed into sinusoidal ones in the annealed films at various temperatures. The concentration-independent interdiffusion coefficients were calculated from the amplitudes of sinusoidal distributions. The activation energy was determined to be 1.66±0.23 eV from the Arrhenius plot. The concentration-dependent interdiffusivity at 150 °C was also estimated using Boltzmann–Matano method.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356564
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  • 6
    Electronic Resource
    Electronic Resource
    Dependence of the magnetic properties of Co/Pd multilayered films on the structural parameters estimated accurately by x-ray diffraction (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4986-4988 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this study, Co/Pd multilayered films with a few atomic layers of Co were prepared by alternating deposition in an ultrahigh-vacuum physical-vapor-deposition system. The structural parameters were estimated accurately making use of only the angular positions of x-ray diffraction peaks. The magnetic properties were found to vary greatly depending on Pd predeposition and Pd-sublayer thicknesses as well as Co-sublayer thickness. The Pd-predeposited films were found to have a remarkably high coercivity of 4723 Oe and a greatly enhanced interfacial magnetic anisotropy of 0.72 mJ/m2, which indicates an excellent potential as a magneto-optical recording medium.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352021
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  • 7
    Electronic Resource
    Electronic Resource
    The effect of microstructural changes on magnetic Barkhausen noise and magnetomechanical acoustic emission in Mn–Mo–Ni pressure vessel steel (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5242-5244 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of microstructural changes on magnetic Barkhausen noise (BN) and magnetomechanical acoustic emission (MAE) in Mn–Mo–Ni pressure-vessel steel with various microstructures was investigated. The BN and MAE signals were strongly influenced by the microstructural features which were characterized by transmission electron micrograph observation. BN energy and the measured area under the rectified signal envelope varied inversely with hardness, and changed with the microstructure. It indicates that they are closely related to the dislocation density and residual stress which act as a barrier to irreversible domain wall motion. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373308
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  • 8
    Electronic Resource
    Electronic Resource
    High-density plasma-induced etch damage of InGaN/GaN multiple quantum well light-emitting diodes (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1189-1194 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasma-induced damage of InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) has been studied in terms of forward turn-on and reverse breakdown voltages, together with etch rate and surface morphology. The physical degradation of sidewall along with rough surface morphology of n–GaN caused by increased ion scattering induced the deterioration of the forward and reverse voltages. The forward turn-on voltage was relatively independent of the pressure up to 20 mTorr. The reverse breakdown voltage showed the worst degradation at 75% Cl2 mainly because of a sidewall contamination. It was found that the turn-on voltage is sensitive to the surface roughness of the etched n–GaN and the breakdown voltage is strongly affected by the sidewall contamination. Annealing under nitrogen after the mesa etching improved the electrical properties of the InGaN/GaN MQW LEDs. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1491585
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  • 9
    Electronic Resource
    Electronic Resource
    Impurities in dielectrics and hydrogen barriers for SrBi2Ta2O9-based ferroelectric memories (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2064-2066 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report results of systematic investigation of impurities in dielectrics and hydrogen barriers (Ti and Al2O3 films) during the integration process of SrBi2Ta2O9-based ferroelectric memories. The capacitors integrated with Ti hydrogen barriers are not electrically degraded regardless of the annealing conditions of the subdielectrics. On the contrary, electrical properties of the capacitors using Al2O3 hydrogen barriers significantly depend on the annealing temperatures for subdielectrics. It turned out that interaction of the dielectrics with plasma during sputtering of the Ti films caused fragmentation of the moisture in the dielectrics and absorption of the hydrogen in the Ti films, making annealing irrelevant. However, the alumina films blocked both hydrogen and moisture in the subdielectrics during the passivation process, resulting in dependence on the annealing temperatures. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1403664
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  • 10
    Electronic Resource
    Electronic Resource
    Low-resistivity transparent In2O3 films prepared by reactive ion plating (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1215-1217 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Indium oxide films with an electrical resistivity of less than 1.5×10−4 Ω cm and good optical quality were prepared by the reactive ion plating of pure indium in an oxygen atmosphere of ∼10−4 Torr. The deposition rate was in the range of 500–900 A(ring)/min, which is much higher than that of the ordinary evaporation. Hall effect measurement showed that the observed low resistivity is primarily due to the high electron mobility (≥70 cm2/V s) with carrier density up to 7×1020/cm3. These properties were correlated with the atomic concentration data by Auger electron spectroscopy and x-ray photoelectron spectroscopy. It has been found that the films of low resistivity had the atomic ratio of O to In of 1.29–1.31.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110893
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