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  • 1
    Electronic Resource
    Electronic Resource
    Model for the charge trapping in high permittivity gate dielectric stacks (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 792-794 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The generation of traps in SiOx/ZrO2 and SiOx/TiO2 gate dielectric stacks during gate voltage stress of metal-oxide-semiconductor capacitors is investigated. The voltage and temperature dependence of the trap generation rate is extracted from the analysis of the gate current increase observed during the electrical stress. These data can be explained by a model based on a two-stage degradation process, i.e., (1) H+ proton generation in the high permittivity gate dielectric layer by the injected electrons and (2) transport of the H+ protons in the high permittivity material, resulting in bond breaking and trap generation. The threshold electron energy for H+ generation and the activation energy for H+ transport and bond breaking are extracted from fits to the experimental results. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1330757
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  • 2
    Electronic Resource
    Electronic Resource
    Trap-assisted tunneling in high permittivity gate dielectric stacks (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8615-8620 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical characteristics of SiOx/ZrO2 and SiOx/Ta2O5 gate dielectric stacks are investigated. The current–density JG in these dielectric stacks is shown to be strongly temperature dependent at low voltage (below about 2 V), the more so in the ZrO2 stack. On the other hand, JG is much less temperature dependent at higher voltage. These results are consistent with a model which takes into account the direct tunneling of electrons across the SiOx layer and the trap-assisted tunneling of electrons through traps with energy levels below the conduction band of the high permittivity dielectric layer. The energy levels and densities of these electron trapping centers are estimated by fitting this trap-assisted tunneling model to the experimental results. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373587
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical properties of thin SiON/Ta2O5 gate dielectric stacks (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6462-6467 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical characteristics of metal–oxide–semiconductor capacitors with SiON/Ta2O5 gate dielectric stacks with thin Ta2O5 layers (6–10 nm) are investigated. From the field and temperature dependence of the current of the gate stacks, it is shown that the main conduction mechanism at low bias is tunneling through the stack and that Poole–Frenkel conduction in the Ta2O5 layer becomes important at larger bias and temperature. From the analysis of the data in the high voltage and temperature range, taking into account the field distribution in both layers, the refractive index n of Ta2O5 and the energy level φB of traps involved in Poole–Frenkel conduction are found to be 2.3 and 0.85 eV, respectively. It is also shown that the gate current density of the stack is reduced by one to three orders of magnitude as compared to SiO2 layers with equivalent electrical thickness (2.5–3 nm). The temperature acceleration effect on the time-dependent dielectric breakdown is shown to be much reduced in the SiON/Ta2O5 stack as compared to SiO2 layers with equivalent electrical thickness. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371709
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  • 4
    Electronic Resource
    Electronic Resource
    Band alignments in metal–oxide–silicon structures with atomic-layer deposited Al2O3 and ZrO2 (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3079-3084 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The energy barrier height Φ for electrons at the interfaces of various metals (Mg,Al,Ni,Cu,Au) with nanometer-thin Al2O3 and ZrO2 layers grown on (100)Si by atomic layer deposition has been directly measured using internal photoemission of electrons into the insulator. The behavior of the metal/Al2O3 contacts with increasing metal electronegativity XM resembles that of the metal/SiO2 interfaces with ideality factor dΦ/dXM(approximate)1. The metal/ZrO2 contacts exhibit a less ideal behavior with dΦ/dXM(approximate)0.75. The metal–silicon work function differences in structures with Al2O3 and ZrO2 insulators appear to be considerably larger than in the structures with thermally grown SiO2, suggesting the presence of a negative dipole layer at the metal/deposited oxide interface. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1436299
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  • 5
    Electronic Resource
    Electronic Resource
    Model for the current–voltage characteristics of ultrathin gate oxides after soft breakdown (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4351-4355 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The current–voltage characteristics of metal-oxide-semiconductor capacitors with a 4.2 nm SiO2 gate oxide are investigated. After the occurrence of soft breakdown, which is observed during constant current stress of the devices, the gate current is shown to behave like a power law of the applied gate voltage. We propose that this power law behavior is due to the formation of a percolation path between the electrons traps generated in the SiO2 layer during current stress of the capacitor. We describe a simple model which accounts for the current–voltage characteristics between two neighbor trapping sites, as well as a distribution of percolation thresholds in these (finite size) ultrathin SiO2 layers. The prediction of the model is in fair agreement with the experimental results in a large voltage range, and leads to a better description of the data than previously reported models. Furthermore, it is shown that this percolation model can also explain the temperature dependence of the gate current after the occurrence of soft breakdown. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368654
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  • 6
    Electronic Resource
    Electronic Resource
    Electron energy barriers between (100)Si and ultrathin stacks of SiO2, Al2O3, and ZrO2 insulators (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3073-3075 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron energy barriers between the valence band of (100)Si and the conduction bands of ultrathin SiO2, Al2O3, ZrO2 insulators and their stacks were determined using internal photoemission of electrons. For SiO2, the barrier of 4.25±0.05 eV was found unchanged down to the oxide thickness of (approximate)1 nm. The barriers for Al2O3 and ZrO2 are substantially lower: 3.25±0.08 and 3.1±0.1 eV, respectively. Thermal oxidation at 650–800 °C enhances the barriers at the Si/Al2O3 and Si/ZrO2 interfaces but does not reduce the high density of band tail states in the insulators, suggesting the formation of silicates. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1366366
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  • 7
    Electronic Resource
    Electronic Resource
    Variation in the fixed charge density of SiOx/ZrO2 gate dielectric stacks during postdeposition oxidation (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1885-1887 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of postdeposition oxidation of SiOx/ZrO2 gate dielectric stacks at different temperatures (500–700 °C) on the density of fixed charge and interface states is investigated. It is shown that with increasing oxidation temperature the density of negative fixed charge is reduced, but the density of interface states increases. The net positive charge observed after oxidation at T〉500 °C resembles the charge generated at the Si/SiO2 interface by hydrogen in the same temperatures range. This association is supported by the resistance of both types of charge against molecular hydrogen anneal but their fast removal in the presence of atomic hydrogen at 400 °C. Therefore, we propose that the observed oxidation-induced positive charge in the SiOx/ZrO2 gate stack may be related to overcoordinated oxygen centers induced by hydrogen. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1310635
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  • 8
    Electronic Resource
    Electronic Resource
    Charge trapping in very thin high-permittivity gate dielectric layers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1381-1383 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The trapping of charge carriers in very thin SiOx/ZrO2 and SiOx/TiO2 gate dielectric stacks during constant gate voltage stress of metal–oxide–semiconductor capacitors has been investigated. The increase of the gate current density observed during the gate voltage stress has been analyzed, taking into account both the buildup of charges in the layer as well as the stress-induced leakage current contribution. From data analysis, the cross section of traps generated during the electrical stress is estimated. It is suggested that these traps are probably ZrOH and TiOH neutral centers that are related to the breaking of bridging O bonds by mobile H+ protons followed by the trapping of these protons at ZrO or TiO sites. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1290138
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  • 9
    Electronic Resource
    Electronic Resource
    Soft breakdown in ultrathin gate oxides: Correlation with the percolation theory of nonlinear conductors (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 514-516 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dielectric breakdown under constant current stressing of 4.2 nm SiO2 gate oxides is investigated. After soft breakdown, which corresponds to an anomalous increase of the stress-induced leakage current of metal–oxide–semiconductor capacitors, the current behaves like a power law of the applied gate voltage VG. After soft breakdown, charge is further injected into the SiO2 layer in order to extract the effective resistivity ρeff of the system as a function of the density of oxide traps D generated in the layer. It is found that ρeff behaves like a power law of (D−Dc) where Dc is the critical density of traps generated at soft breakdown. These results are in fair agreement with the predictions of the percolation theory of nonlinear conductor networks. Besides, the value of the critical exponent related to the resistivity is close to the one expected in two dimensions. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121918
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  • 10
    Electronic Resource
    Electronic Resource
    Model for interface defect and positive charge generation in ultrathin SiO2/ZrO2 gate dielectric stacks (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 709-711 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The generation of interface defects and positive charge during the injection of electrons in p-Si/SiO2/ZrO2/TiN structures is investigated. The kinetics of generation of both type of defects are found to be very similar. A model is proposed to explain the interface defect generation, based on the depassivation of trivalent silicon dangling bonds (Si3(Triple Bond)SiH→Si3(Triple Bond)Si⋅) at the (100)Si/SiO2 interface by the injected electrons. A Gaussian spread for the activation energy Ed related to the dissociation of the Si–H bond is included in this model. Comparison with experimental results reveals that the mean value of the activation energy Edi decreases linearly with the electric field Eox across the SiO2 layer. This behavior is attributed to the alignment of the Si–H dipole moment with respect to Eox, which favors dissociation of the Si–H bond. The hint of a correlation between the interface defect and positive charge generation suggests that the positively charged centers might be hydrogen-induced overcoordinated oxygen centers. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1496146
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