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  • 1
    Electronic Resource
    Electronic Resource
    Surface passivation and microroughness of (100) silicon etched in aqueous hydrogen halide (HF, HCl, HBr, HI) solutions (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1323-1325 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface reactivity of hydrogen-passivated, HF-last-cleaned Si(100) toward aqueous HX and HF/HX (X=Cl, Br, I) is examined. The HCl and HBr solutions are found to leave the HF-cleaned bare Si surface unaltered, while the HI solution reoxidizes the hydrogen-passivated surface. Treatments in aqueous HF/HCl or HF/HBr solutions lead to the same surface passivation and surface microroughness as for HF-cleaned surfaces. In the HF/HI solution, a simultaneous oxidation and etching process takes place, resulting in an increased (111) microfaceting of the Si(100) surface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358938
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  • 2
    Electronic Resource
    Electronic Resource
    Role of impurities in zone melting recrystallization of 10 μm thick polycrystalline silicon films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2660-2668 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zone melting recrystallization (ZMR) of polycrystalline silicon on SiO2 can offer an interesting, i.e., cheaper, alternative to the dielectric isolation technology used for high-voltage integrated circuits or smart power devices. For that purpose crystalline Si layers of 10–15 μm thickness are needed. In this work a mercury-arc lamp stripheater was used to recrystallize 10 μm thick polycrystalline silicon films. In unseeded layers, grain boundaries and subgrain boundaries appeared. By applying seeding, single crystalline areas of at least 1 mm by 1 mm were obtained. In these layers stacking faults were revealed as being the major crystal defect. In ZMR oxygen, nitrogen, and carbon are the major impurities which are incorporated into the silicon either intentionally or unintentionally. Among these impurities, nitrogen and carbon are believed to play a crucial role in promoting the wetting of the insulator and cap layer by liquid silicon. In this paper the distribution and transport of oxygen and nitrogen during ZMR are studied. It is shown that nitrogen can cause dendritic growth and that oxygen is unlikely to do so.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341006
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical properties of thin SiON/Ta2O5 gate dielectric stacks (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6462-6467 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical characteristics of metal–oxide–semiconductor capacitors with SiON/Ta2O5 gate dielectric stacks with thin Ta2O5 layers (6–10 nm) are investigated. From the field and temperature dependence of the current of the gate stacks, it is shown that the main conduction mechanism at low bias is tunneling through the stack and that Poole–Frenkel conduction in the Ta2O5 layer becomes important at larger bias and temperature. From the analysis of the data in the high voltage and temperature range, taking into account the field distribution in both layers, the refractive index n of Ta2O5 and the energy level φB of traps involved in Poole–Frenkel conduction are found to be 2.3 and 0.85 eV, respectively. It is also shown that the gate current density of the stack is reduced by one to three orders of magnitude as compared to SiO2 layers with equivalent electrical thickness (2.5–3 nm). The temperature acceleration effect on the time-dependent dielectric breakdown is shown to be much reduced in the SiON/Ta2O5 stack as compared to SiO2 layers with equivalent electrical thickness. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371709
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  • 4
    Electronic Resource
    Electronic Resource
    Model for the current–voltage characteristics of ultrathin gate oxides after soft breakdown (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4351-4355 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The current–voltage characteristics of metal-oxide-semiconductor capacitors with a 4.2 nm SiO2 gate oxide are investigated. After the occurrence of soft breakdown, which is observed during constant current stress of the devices, the gate current is shown to behave like a power law of the applied gate voltage. We propose that this power law behavior is due to the formation of a percolation path between the electrons traps generated in the SiO2 layer during current stress of the capacitor. We describe a simple model which accounts for the current–voltage characteristics between two neighbor trapping sites, as well as a distribution of percolation thresholds in these (finite size) ultrathin SiO2 layers. The prediction of the model is in fair agreement with the experimental results in a large voltage range, and leads to a better description of the data than previously reported models. Furthermore, it is shown that this percolation model can also explain the temperature dependence of the gate current after the occurrence of soft breakdown. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368654
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  • 5
    Electronic Resource
    Electronic Resource
    Oxygen distribution in silicon-on-insulator layers obtained by zone melting recrystallization (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7337-7347 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The oxygen content in zone melting recrystallization silicon-on-insulator (ZMR SOI) layers with thicknesses ranging between 0.5 and 25 μm obtained with a movable lampheater is studied. Secondary-ion-mass spectrometry profiling as well as numerical calculations are presented. The simulations are based on oxygen redistribution during cooling down. In the model it is assumed that the interface reaction is fast enough to be not the rate-limiting step in the redistribution process. Consequently, the oxygen transport was considered to be entirely diffusion limited. Good agreement was found between the measurements and calculated values. The profiles show a maximum at the center of the layer and symmetrically depleted regions in the top and bottom of the silicon film. It has been generally accepted that ZMR SOI layers have a high oxygen concentration corresponding to the saturation level at melting point. In the present study, however, we show that in the 0.5-μm layers the oxygen concentration is as low as 1×1017(O atoms)/cm3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344520
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  • 6
    Electronic Resource
    Electronic Resource
    Soft breakdown in ultrathin gate oxides: Correlation with the percolation theory of nonlinear conductors (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 514-516 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dielectric breakdown under constant current stressing of 4.2 nm SiO2 gate oxides is investigated. After soft breakdown, which corresponds to an anomalous increase of the stress-induced leakage current of metal–oxide–semiconductor capacitors, the current behaves like a power law of the applied gate voltage VG. After soft breakdown, charge is further injected into the SiO2 layer in order to extract the effective resistivity ρeff of the system as a function of the density of oxide traps D generated in the layer. It is found that ρeff behaves like a power law of (D−Dc) where Dc is the critical density of traps generated at soft breakdown. These results are in fair agreement with the predictions of the percolation theory of nonlinear conductor networks. Besides, the value of the critical exponent related to the resistivity is close to the one expected in two dimensions. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121918
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