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  • 1
    Electronic Resource
    Electronic Resource
    The free Dirac operator on compact and noncompact graphs (1990)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 31 (1990), S. 1157-1163 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The free Dirac operator defined on composite one-dimensional structures consisting of finitely many half-lines and intervals is investigated. The influence of the connection points between the constituents is modeled by transition conditions for the wave functions or equivalently by different self-adjoint extensions of the Dirac operator. General relations between the parameters of the extensions and the eigenvalues resp. the scattering coefficients are derived and then applied to the cases of a bundle of half-lines, a point defect, a branching line, and an eye-shaped structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.529025
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Surface passivation and microroughness of (100) silicon etched in aqueous hydrogen halide (HF, HCl, HBr, HI) solutions (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1323-1325 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface reactivity of hydrogen-passivated, HF-last-cleaned Si(100) toward aqueous HX and HF/HX (X=Cl, Br, I) is examined. The HCl and HBr solutions are found to leave the HF-cleaned bare Si surface unaltered, while the HI solution reoxidizes the hydrogen-passivated surface. Treatments in aqueous HF/HCl or HF/HBr solutions lead to the same surface passivation and surface microroughness as for HF-cleaned surfaces. In the HF/HI solution, a simultaneous oxidation and etching process takes place, resulting in an increased (111) microfaceting of the Si(100) surface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358938
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Highly conductive diamond probes for scanning spreading resistance microscopy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1603-1605 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scanning spreading resistance microscopy (SSRM) is a powerful method for the characterization of Si semiconductor devices based on atomic force microscopy (AFM). It requires conductive probe tips made of doped diamond. Although various solid diamond probes have been fabricated, they could not satisfy the requirements for SSRM. Therefore, we have developed a SSRM probe composed of a pyramidal diamond tip attached to a Si cantilever. This letter describes the probe fabrication process briefly and presents excellent SSRM measurements obtained on Si calibration samples. Solid diamond tips integrated in Si cantilevers were used for SSRM showing a significantly higher dynamic range than the conductive probes known to date. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126109
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    Paper (German National Licenses)
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