ISSN:
1013-9826
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Polycrystalline ZrO2 and yttria-stablilized ZrO2 thin films have been deposited on Pt/Ti/SiO2/Si substrates by pulsed laser deposition methods. Pt/ZrO2/Pt and Pt/YSZ/Pt capacitor structures show giant conductivity switching behaviors which can be utilized for nonvolatile memory devices. Maximum on/off ratio of 106 and good endurance even after 105 times conductivity switching are observed in a typical Pt/ZrO2/Pt whose ZrO2 film has been deposited at 100 °C and an oxygenpressure of 50 mTorr. The Pt/ZrO2/Pt structure exhibits two ohmic behaviors in the low voltage region (V 〈 1.4 V) depending on the value of previously applied high voltage and Schottky-type conduction in the high voltage region (1.4 V 〈 V 〈 8.9 V). It seems that conductivity switching behaviors in our Pt/ZrO2/Pt structure result from the changes in both the Schottky barrier and the bulk conductivity controlled by applied voltages. A Pt/YSZ/Pt capacitor structure has more stable resetvoltage and current state than a Pt/ZrO2/Pt capacitor structure. Moreover, a Pt/YSZ/Pt capacitor structure shows higher Conductivity than a Pt/ZrO2/Pt capacitor structure, which may result from substitution of Y3+ ions for Zr4+ ions
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/50/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.306-308.1301.pdf
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