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  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Advanced materials research Vol. 47-50 (June 2008), p. 726-729 
    ISSN: 1662-8985
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: In this study, a high performance peristaltic micropump has been developed andinvestigated. The micropump has three cylinder chambers which are connected through microchannelsand two normally closing active membrane valves at inlet/outlet for high pumpingpressure performance. A circular shaped miniature LIPCA has been developed and manufacturedfor actuating diaphragms. In this LIPCA, a 0.1mm thickness PZT ceramic is used as an active layer.As a result, the actuator has shown to produce large out-of-plane deflection and consumed lowpower. During the design process, a coupled field analysis was conducted to predict the actuatingbehavior of a diaphragm. The actuator behavior was investigated both theoretically andexperimentally. In addition, MEMS technique was used to fabricate the peristaltic micropump.Judging from experimental flow rate and pumping pressure results, the present peristalticmicropump has higher performance than the same kind of micropump developed elsewhere
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 331-337 (May 2000), p. 437-442 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 306-308 (Mar. 2006), p. 1313-1318 
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Pb0.65Ba0.35ZrO3 (PBZ) thin films have been grown on MgO (001) substrates by pulsed-laser deposition (PLD). We have compared the structural and dielectric properties of PBZ films grown at various temperatures. A highly c-axis orientation has appeared at PBZ film grown at the deposition temperature of 550oC. The c-axis oriented PBZ film has also shown the largest tunability among all the PBZ films in capacitance-voltage measurements. The tunability and dielectric loss of the PBZ film was 20% and 0.00959, respectively. In addition, we have compared thetemperature coefficient of capacitance (TCC) of a PBZ film with that of a Ba0.5Sr0.5TiO3 (BST) film which is a well-known material applicable to tunable microwave devices. We have confirmed that TCC value of a PBZ thin film was three-times smaller than that of a BST thin film
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Polycrystalline ZrO2 and yttria-stablilized ZrO2 thin films have been deposited on Pt/Ti/SiO2/Si substrates by pulsed laser deposition methods. Pt/ZrO2/Pt and Pt/YSZ/Pt capacitor structures show giant conductivity switching behaviors which can be utilized for nonvolatile memory devices. Maximum on/off ratio of 106 and good endurance even after 105 times conductivity switching are observed in a typical Pt/ZrO2/Pt whose ZrO2 film has been deposited at 100 °C and an oxygenpressure of 50 mTorr. The Pt/ZrO2/Pt structure exhibits two ohmic behaviors in the low voltage region (V 〈 1.4 V) depending on the value of previously applied high voltage and Schottky-type conduction in the high voltage region (1.4 V 〈 V 〈 8.9 V). It seems that conductivity switching behaviors in our Pt/ZrO2/Pt structure result from the changes in both the Schottky barrier and the bulk conductivity controlled by applied voltages. A Pt/YSZ/Pt capacitor structure has more stable resetvoltage and current state than a Pt/ZrO2/Pt capacitor structure. Moreover, a Pt/YSZ/Pt capacitor structure shows higher Conductivity than a Pt/ZrO2/Pt capacitor structure, which may result from substitution of Y3+ ions for Zr4+ ions
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 534-536 (Jan. 2007), p. 45-48 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Several titanate powders (Al2TiO5, SrTiO3, etc.) were synthesized by an ethylene glycolsolution route. Titanium isopropoxide and nitrate salts were dissolved in stoichiometric proportionsin liquid-type ethylene glycol without any precipitation. The parent precursor sols were dried toporous gels, and then the gels were calcined and crystallized. All synthesized titanate powders hadstable crystallization behavior at low temperature and high specific surface area after a simpleball-milling process. A three-component PZT (Pb(Zr0.52·Ti0.48)O3) powder was also synthesizedsuccessfully by the ethylene glycol method. In this study, the characteristics of the multi-componenttitanate powders by the ethylene glycol method are examined
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 396-402 (July 2002), p. 481-486 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 6 (1995), S. 165-172 
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract In Part I, the reaction sequence, microstructural analysis and microwave dielectric properties of manganese-doped BaTi4O9 + ZnO + Ta2O5 ceramics are discussed. This composition undergoes complex intermediate reactions during calcination. However, the final crystal phases after the sintering process were identical regardless of calcination temperature. Meanwhile, different calcination temperatures affect the relative volume fractions of the BaZn2Ti4O11 phase and result in variations in T f values. To analyse the microstructure, SEM, TEM and EDS analysis were performed. Mn dopants greatly enhanced the Q factor, up to 11000 at 4.5 GHz, whereas undoped ceramics indicated a high loss, probably due to the formation of Ti3+ during sintering in air.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 6 (1995), S. 173-177 
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract By means of Scanning Auger Electron Spectroscopy (SAES), the presence of Ti3+ ions in BaTi4O9-ZnO-Ta2O5 ceramics sintered in air was observed directly. The doublet peak structures of titanium near the 416 eV auger peak were used to identify the valence state of titanium. Correlation between the microwave dielectric loss and the concentration of Ti3+ ions is discussed. Also, the quasi-chemical defect equations for the stabilization of Ti3+ ions in BaTi4O9-Ta2O5 ceramics are presented.
    Type of Medium: Electronic Resource
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