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  • 1
    Electronic Resource
    Electronic Resource
    Field electron emission from hydrogenated amorphous silicon films on tungsten: Light-induced effects (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3437-3439 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Field electron emission from a hydrogenated amorphous silicon deposited tungsten tip has been studied. The effect of prolonged (hourly) exposure to light on the field electron emission current has been investigated. The current-voltage characteristics of the as-deposited, light exposed, and annealed states of the emitter showed semiconducting behavior in accordance with the Fowler–Nordheim law. In case of an initially annealed emitter tip, the field emission current was found to increase monotonically with the light exposure, reversibly for shorter durations of a few minutes. The effect of long term (hourly) exposure of light resulted in the increase in the field emission current level nonlinearly with the exposure time. The current level did not come down to the original level even after switching off the light in contrast to the effect of short duration light exposure. The enhancement in the field emission current has been attributed to tunneling though the dangling bond states created by light exposure. The results have been discussed in light of the Staebler–Wronski effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111234
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  • 2
    Electronic Resource
    Electronic Resource
    A study of laser-ion-deposited carbon films on tungsten by x-ray diffraction, field ion microscopy, and electron spectroscopy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1052-1054 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin carbon films have been deposited on polycrystalline tungsten foil as well as field ion microscope (FIM) tips by laser-ion deposition in a high-vacuum environment with an ion extraction voltage of −2 kV. Structural characterization of these films has been carried out by using low-angle x-ray diffraction (XRD) and FIM. The low-angle XRD reveals the formation of an interfacial α-W2C phase. The FIM image indicates the formation of the α-W2C phase on the tungsten tip. X-ray photoelectron spectroscopy has been utilized to reveal that the bonding character in the film is sp3. Further, x-ray-excited Auger electron spectroscopy has also supported the diamondlike nature of the films. The results are discussed, and a sequence of layers deposited on tungsten is suggested in view of the structural match.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350397
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Stability of field emission current from porous n-GaAs(110) (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1085-1087 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Field electron emission from porous GaAs has been investigated. The emitter was prepared by anodic etching of n-GaAs (110) in 0.1 M HCl solution. The as-etched porous GaAs shows nonlinear Fowler–Nordheim (FN) characteristics, with a low onset voltage. The emitter, after operating for 6 h at the residual gas pressure of 1×10−8 mbar, shows a linear FN characteristics with a relatively high onset voltage and poor field emission current stability as compared to the as-etched emitter. The change in the behavior was attributed to the residual gas ion bombardment during field electron emission. X-ray photoelectron spectroscopic investigations were carried out on as-etched sample and the one which was studied for field emission. The studies indicate that the as-etched surface contains As2O3 and the surface after field electron emission for about 6 h becomes gallium rich. The presence of As2O3 seems to be a desirable feature for the stable field emission current. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1436535
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  • 4
    Electronic Resource
    Electronic Resource
    Self-assembled Ge nanostructures as field emitters (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2394-2396 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-assembled two-dimensional arrays of Ge islands on Si(111)7×7 were grown by depositing Ge on Si(111)7×7 substrates held at 650 K. It was observed that these islands were conical in shape as well as nearly uniform in size and shape. Consequently, the substrates of about 1 cm2 area were used as field-emitter arrays. It was found that the arrays exhibited a low onset voltage for field emission, large emission current, as well as high current stability. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1316076
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