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  • 1
    Electronic Resource
    Electronic Resource
    Model for the diffusion of zinc in gallium arsenide (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2117-2119 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The anomalous shape of the Zn diffusion profile in GaAs has been quantitatively explained. The Frank–Turnbull mechanism is invoked to govern the interchange between interstitial and substitutional Zn, via the Ga vacancies. These vacancies are proposed to be either neutral or singly ionized, depending on the position of the Fermi level. In addition, two physical phenomena are proposed. Substitutional Zn thermally generates interstitial Zn-Ga vacancy pairs and there is pairing between the donor, interstitial Zn, and the acceptor, substitutional Zn. The model is found to be in good agreement with the experimental data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102080
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  • 2
    Electronic Resource
    Electronic Resource
    Mechanism for ion-induced mixing of GaAs-AlGaAs interfaces by rapid thermal annealing (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1635-1637 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A mechanism for the transient-enhanced interdiffusion of GaAs-AlGaAs interfaces during rapid thermal annealing of ion-implanted heterostructures is proposed. The model is based on the solution of the coupled diffusion equations involving the excess vacancies and the post-implantation Al distribution following ion implantation. Both initial distributions are obtained from the solution of a three-dimensional Monte Carlo simulation of ion implantation into a heterostructure sample. In general, the model is valid for time frames within which impurity diffusion does not occur appreciably so that impurity-enhanced diffusion remains a weak effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99935
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  • 3
    Electronic Resource
    Electronic Resource
    Solution of the vector wave equation using Green's function techniques (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4577-4582 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polarized solutions of the vector wave equation are computed for two-dimensional waveguides using a Green's function perturbative approach. By solving the vector wave equation, the discontinuities in the normal electric field across internal boundaries are automatically taken into account, which obviates the need for imposing internal boundary conditions. Both the effective indices and the electric field profiles can be obtained for structures containing arbitrary index of refraction profiles. In order to obtain field profiles to the same order of accuracy as the effective indices, the iterated Galerkin method is used to improve the wave equation eigenfunctions. Compared with comparable finite element or finite difference-based codes, the computed effective indices and electric field profiles are determined to be in excellent agreement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350756
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  • 4
    Electronic Resource
    Electronic Resource
    Ga vacancy-assisted diffusion of Si in GaAs (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 6176-6178 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model for Si diffusion into GaAs based on the formation of Si+Ga-V−Ga pairs is developed. The model follows the formalism developed by M. E. Greiner and J. F. Gibbons [Appl. Phys. Lett. 44, 750 (1984)]. Using recently derived values for the Ga vacancy diffusivity, it is shown that the pair diffusion coefficient is approximately equal to three-quarters its value. The results of the model are demonstrated to be in good agreement with the Si diffusion data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343602
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  • 5
    Electronic Resource
    Electronic Resource
    Studies of zinc diffusion in gallium arsenide by rapid thermal processing (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1359-1365 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rapid thermal annealing has been used to diffuse Zn into GaAs from a thin film zinc silicate source prepared by atmospheric pressure chemical vapor deposition. For a diffusion temperature of 650 °C, comparisons were made with conventional, open-tube furnace annealing and the diffusivities were found to be similar, in contrast to previous experimental work. In the temperature range 650–750 °C, sharp zinc diffusion profiles are observed. Above 750 °C, kinks are seen in the diffusion profiles. These kinks are also observed when semi-insulating substrates are used instead of silicon doped n+ -substrates. Previously, we have introduced a zinc diffusion model based on the pairing of interstitial Zn with all acceptor species present during diffusion. The dominant species are found to be substitutional Zn and the gallium vacancy, where the concentration of the latter is a function of the background doping concentration. The results of this model are shown to agree with all of our experimental evidence and are also consistent with our experimental observation of two distinct activation energies for zinc diffusion into n+ -doped GaAs substrates, 1.1 eV and 2.6 eV for temperatures above and below ∼790 °C, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347273
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of ion implantation dose on the interdiffusion of GaAs-AlGaAs interfaces (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2087-2090 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental results of enhanced interdiffusion of GaAs-AlGaAs interfaces are reported. These are obtained by implanting Ar ions at doses ranging from 2×1013 to 5×1014 cm−2 into heterostructure samples followed by rapid thermal annealing at 950 °C for 30 s. The degree of intermixing decreases from the surface up to the projected ion range and is a function of the implantation dose. It is postulated that this variation results from the coalescence of some of the excess vacancies into extended defects, which are then unavailable to assist in the enhanced interdiffusion process. By assuming that the concentration of mobile vacancies at any depth is proportional to the ion's electronic energy loss and inversely proportional to the ion's nuclear energy loss, the calculated intermixing results are shown to be in good agreement with the experimental data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346562
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  • 7
    Electronic Resource
    Electronic Resource
    Mechanism for zinc diffusion in n-type gallium arsenide (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2464-2466 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model is presented that is able to account successfully for the Zn diffusion profiles in n+-GaAs. The model is based on a previously developed formalism whose basis is the retarding of the interstitial Zn diffusivity because of Coulomb pairing between interstitial and substitutional Zn. By extending the model to include Coulomb pairing of interstitial Zn with all acceptors present during diffusion, the resulting theoretical profiles are shown to be in very good agreement with the data while using only one adjustable parameter.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349401
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  • 8
    Electronic Resource
    Electronic Resource
    Study of the interdiffusion of GaAs-AlGaAs interfaces during rapid thermal annealing of ion-implanted structures (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 545-551 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phenomenon of transient-enhanced interdiffusion of GaAs-AlGaAs interfaces during rapid thermal annealing of ion-implanted heterostructures is studied. It is shown that the important properties that influence the degree of interdiffusion are the temperature, the concentration of excess vacancies, and the ability of the vacancies to diffuse freely. A model is presented to explain these observations; it is based on the solution of coupled diffusion equations involving excess vacancy and Al distributions following ion implantation. Both initial distributions are obtained from the solution of a three-dimensional Monte Carlo simulation of ion implantation into a heterostructure sample. The model is found to be in excellent agreement with several sets of experiments. More specifically, it is shown to be valid for as-implanted vacancy concentrations below 6×1019 cm−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343571
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  • 9
    Electronic Resource
    Electronic Resource
    Rigorous optical modeling of multilayer organic light-emitting diode devices (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1649-1651 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an exact classical solution to the problem of dipole emission in a planar multilayer light-emitting device. The inputs to the model are the photoluminescence and quantum yield of the emitter material, and the device layer thicknesses and indices of refraction. The results of the model are applied to predicting the radiant intensity of organic light-emitting diodes as a function of varying device layer thickness. It is shown that the predicted radiances are in excellent agreement with the data. We also present results for the Poynting power distribution from a randomly aligned dipole for positions both internal and external to the diodes. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1356453
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  • 10
    Electronic Resource
    Electronic Resource
    Ensemble Monte Carlo simulation of Te-induced intermixing of AlGaAs-based interfaces (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2071-2073 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An ensemble Monte Carlo simulation has been used to model the enhanced disordering of AlGaAs-based interfaces in the presence of high concentrations of Te atoms. The model is based on the experimental finding that the thermal interdiffusion process is similar to the self-diffusion of Ga in GaAs. The model agrees well with the experimental data for both the Ga self-diffusion and intermixing. The intermixing is found to be caused by the enhanced solubility of the Ga vacancy acceptors in the presence of the donor Te atoms, and not as a result of the diffusion of the Te atoms. The activation energy of the process is found to be approximately 2.7 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100322
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