ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We identified regions with low Schottky barrier height on 4H-SiC surfaces by theelectrochemical deposition of ZnO. When we adopt an appropriate deposition voltage, ZnO grewpreferentially at the regions with the low Schottky barrier height. Thus, we were able to identify theZnO film only at these regions if we stopped the deposition at a proper time. We compared positionsof the deposited film and etch pit after molten NaOH etching. As a result, in a bulk 4H-SiC, the filmswere deposited around some of micropipe positions. On the other hand, in an epitaxial 4H-SiC layer,although approximately a half of deposited films seemed to grow at the etch-pit defect positions, otherdeposited films were grown at positions without etch-pit defects. Therefore the Schottky barrierheights were reduced by not only defects emerging as etch pits but also other kind of origins inepitaxial 4H-SiC
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.373.pdf
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