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  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 47-48 (July 1995), p. 281-286 
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 210-213 (May 1996), p. 605-610 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 207-209 (Feb. 1996), p. 233-236 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3569-3573 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article reports on defect studies of neutron-irradiated Czochralski-grown silicon (Cz-Si) material by means of infrared spectroscopy. In particular, the investigation was focused on the evolution of the 828 cm−1 well-known band of A-center, due to isochronal anneals from room temperature (RT) up to (approximate)700 °C. The strength of the VO band begins to increase above (approximate)200 gradually up to 300 °C (stage I); then, it begins to decrease up to (approximate)400 °C (stage II), where upon it stabilizes up to (approximate)550 °C (stage III). Upon re-irradiation under exactly the same conditions and repeating the annealing process, the increase of the VO signal in stage I disappears. The phenomenon is ascribed to the existence of defect aggregates labeled as Xi centers which are correlated with (impurity-defect) clusters that compete with Oi in capturing vacancies. The presence of Xi centers is related to the thermal annealings performed. Comparison of the evolution of VO (828 cm−1) and VO2 (887 cm−1) bands between irradiated and re-irradiated materials, during stage II, is made and the results are discussed in the framework of established reaction patterns. The stabilization of the amplitude of the 828 cm−1 line in stage III is examined. The prevailing aspect is that a portion of A-centers in neutron-irradiated Si acquires larger thermal stability by relaxing in the vicinity of larger defects. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 8074-8078 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared spectroscopy was used to study the 887 cm−1 band in neutron irradiated Czochralski-grown silicon arising in the spectra upon annealing of the 830 cm−1 band of the VO defect. Our analysis showed the presence of a 884 cm−1 shoulder in the region of the 887 cm−1 infrared band. The 887 cm−1 band is generally attributed to the VO2 defect formed by the capture of a mobile VO center by an oxygen interstitial impurity. In our study the shoulder at 884 cm−1 is tentatively correlated with the V3O defect. Semiempirical calculations carried out for the vibrational frequency of V3O structure gave a value at 883 cm−1 thus corroborating the latter assignment. This new picture of the spectra in the range of the 887 cm−1 band could explain some so far unaccounted for experimental findings previously reported in literature. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 60-70 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conditions under which pressure (stress) variations on solids, containing charged defects, can lead to the emission of transient electric signals, are discussed. The resulting electric field E varies as 1/d3 (where d denotes the distance from the emitting source), in the simple case when the surrounding medium is homogeneous and isotropic. We show that this behavior changes to 1/d when studying the electric field within a cylindrical channel of radius R and infinite length having conductivity appreciably larger than that of the host medium; this holds up to a certain (reduced) distance d/R, which increases versus the conductivity ratio. We also investigate the variation of the electric field, versus the distance, inside a layer of width w and infinite extent having conductivity appreciably larger than that of the host medium; we then find that the electric field decreases as 1/d2, in a wide range of distances up to a certain value of d/w, which is controlled by the conductivity ratio. In both conductive paths, i.e., cylinder and layer, the electric field approaches the 1/d3 behavior, but only at very large values of d/R and d/w, respectively, reaching the value that would be measured if the host medium was solely present. This implies a high current density inside the path. The case, when the highly conductive path terminates within the host medium, is also discussed; it is found that the "edge effects" play a prominent role in electric field values measured within the host medium, but close to the outcrop of the path. It is shown that a simplified calculation could erroneously obtain electric field values that are several orders of magnitude smaller than those calculated in this article. As an example, the transmission of low frequency electric signals in the earth is discussed. It is concluded that charged-defect generation mechanisms lead to electric field values that are measurable at large distances. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1645-1650 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared absorption measurements were made of the localized vibrational modes due to defects produced in Czochralski-grown Si material after irradiation with fast neutrons and subsequent thermal treatments. The investigation was focused, in particular, on three satellite bands in the region of the A center, located at 839, 833 and 824 cm−1 respectively, the annealing behavior of which was carefully monitored. Correlation of our results with previous infrared, electron paramagnetic resonance and positron annihilation studies favors attributing these bands to the V2O, V3O2 and V2O2 defects respectively. In addition, semiempirical calculations were carried out for the vibrational frequencies of these defects, and the predicted values are in agreement with the above assignments. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1619-1560
    Keywords: catecholamines ; clonidine ; hyperadrenergic ; mania ; withdrawal
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract Abrupt cessation of clonidine treatment precipitates a physiological withdrawal syndrome, thought to be due to a hyperactive state of central autonomic and cognitive adrenergic neuronal systems dependent on presynaptic α2-adrenoceptors and/or imidazoline receptors. We hereby describe a 36-year-old male with history of end-stage renal disease, hypertension and medication non-compliance, who presented with severe hypertension and remarkable agitation. His daily clonidine intake was estimated to be 10 mg. The patient had abruptly discontinued his clonidine five days prior to admission. The following indices of adrenergic activity were measured in plasma (normal control values in parentheses): noradrenaline (NA) 8.59 nmol/l (1.32–4.56 nmol/l), adrenaline (Adr) 1.86 nmol/l (0.83–4.20 nmol/l), total 3-methoxy-4-hydroxyphenylglycol (MHPG) 152.2 nmol/l (45.1–111.5 nmol/l), and free MHPG 33.0 nmol/l (12.2–31.4 nmol/l). Plasma clonidine level was 3.53 ng/ml (15.9 nmol/l) with the usual therapeutic level being 〈2.0 ng/ml (8.9 nmol/l). Initially, the patient received sedatives and was started on clonidine for the first 24 hours only, after which time period prazosin was started, with good response of his blood pressure and reversal of his mental status changes. At that point, the plasma values of indices of adrenergic activity had decreased compared with their corresponding initial values by the following percentages: NA 60.6%, Adr 22.6%, total MHPG 42.2% and free MHPG 11.5%. Plasma clonidine level had decreased now by 43.6% to an absolute value of 1.99 ng/ml (8.85 nmol/l). We emphasize that physicians should be aware of clonidine's abuse potential and caution should be taken, as well as the appropriate route chosen, when prescribing clonidine in patients who show features of poor compliance to medications and especially in patients with psychoses, suicide potential or personality disorders.
    Type of Medium: Electronic Resource
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