ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We demonstrate high-speed and high-quality 6H-SiC homoepitaxial growth on a1°-off c-plane SiC substrate by a closed-space sublimation method. By optimizing the size ofsingle-crystal source materials in the growth system, a high-quality 6H-SiC epilayer with anX-ray diffraction rocking curve (0006) full-width at the half maximum (FWHM) of 38 arcsecwas obtained. We also carried out doping of nitrogen and boron during the growth of theSiC epilayer. A strong donor-acceptor pair (DAP) emission at a peak wavelength of 570 nmunder excitation by a 395 nm nitride-based light-emitting diode (LED) was observed. The6H-SiC with DAP emission is promising for use as a phosphor in a nitride-based LED,because high-quality nitride layers can be grown on the SiC substrates with small off-orientedangles
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.263.pdf
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