ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The fundamental growth issues of AlN and AlGaN on sapphire and SiC usingmetalorganic vapor phase epitaxy, particularly the growth of AlN and AlGaN on a groove-patternedtemplate are reviewed. In addition, the conductivity control of AlGaN is shown. The conductivitycontrol of p-type AlGaN, particularly the realization of a high hole concentration, is essential forrealizing high-efficiency UV and DUV LEDs and LDs
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/19/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.590.175.pdf
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