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  • 1
    Electronic Resource
    Electronic Resource
    Structure and luminescence of annealed nanoparticles of ZnS:Mn (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 4985-4993 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural and light-emitting properties of nanoparticles of ZnS:Mn annealed in vacuum at temperatures up to 525 °C are presented. Annealing the 3.5 nm particles at temperatures up to 350 °C caused growth of some particles without substantial change in the luminescence or ZnS lattice. After annealing at 400–525 °C, the high-temperature wurtzite phase of ZnS appeared, accompanied by an increase of the average particle diameter to approximately 100 nm and a rearrangement of the Mn ions. Dramatic increase in cathodoluminescence emission was also observed and is compared to the structural information obtained from electron microscopy, x-ray diffraction, x-ray absorption fine structure, and electron paramagnetic resonance measurements. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1314326
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  • 2
    Electronic Resource
    Electronic Resource
    Metastable defects in Be-doped AlxGa1−xAs (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4828-4831 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep-level transient spectroscopy has been used to study metastable defects in Be-doped Alx Ga1−x As grown by molecular-beam epitaxy. The metastability manifests itself by the appearance of different spectra depending upon whether the sample is cooled from a high temperature with zero bias or a reverse bias applied to it. The defects are found in concentrations of 1015 cm−3 in a sample doped with 1018 Be cm−3 and in much lower concentrations in a 1017 Be cm−3 sample. Isochronal annealing experiments indicate that the defect is multistable and that it is best modeled as a mobile interstitial which can reside at several sites near an acceptor. The activation energies for these defects are between 0.2 and 0.5 eV above the valence band.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343216
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  • 3
    Electronic Resource
    Electronic Resource
    Observation of ion-implantation-damage-created n-type conductivity in InP after high-temperature annealing (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3091-3098 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conductivity and the impurity profiles of InP implanted with dopant ions (Si,Be) or non dopant ions (B,H,N,O,P) have been investigated. Experiments have been done in substrates with and without Fe doping. Low-temperature, short-time annealing of implanted Si and Be reveals an n-type distribution of carriers which cannot be accounted for on the basis of implant activation. In order to examine the contribution without the carriers originating from the dopant ions, the behavior of electrically inactive B, H, N, O, and P, implants was investigated. Implantation of these ions into semi-insulating InP introduced n-type doping in the 1×1016 cm3 range after an anneal above 450 °C. For H, O, N, and P ions, the n-type conductivity could be eliminated by annealing at higher temperatures. However, boron anneals up to 750 °C did not eliminate the n-type conductivity. The n-type carrier profiles tracked the ion profiles. The carrier profile is influenced by the redistribution of the Fe during annealing; however, the Fe motion cannot explain the n-type conductivity. This conductivity may be due to a complex formed above 450 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354574
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  • 4
    Electronic Resource
    Electronic Resource
    Optically detected magnetic resonance of cubic SiC grown by chemical vapor deposition on Si (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6170-6173 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two distinct spectra are reported from an optically detected magnetic resonance study of epitaxial films of cubic SiC. The first is a Lorentzian, single line with g=2.0065±0.0015, which is strong in Al-doped SiC. This line is attributed to residual donors. The second spectrum, observed in both Al-doped and undoped samples, is dominated by a pair of exchange-split lines with g=2.0024 and a=0.095 cm−1. Although a definite assignment of this spectrum cannot be made, spectral dependence studies show it is associated with a defect-related luminescence band in the energy range from 1.6 to 1.9 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346906
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  • 5
    Electronic Resource
    Electronic Resource
    Paramagnetic resonance in GaN-based light emitting diodes (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2376-2378 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Significant advances in GaN-based materials and devices have prompted intense interest in the group III nitrides. In this letter, we report electroluminescence-detected magnetic resonance (ELDMR) and electrically detected magnetic resonance (EDMR) results on InGaN/AlGaN double heterostructures which have an intense blue emission. The dominant feature detected by either technique is a broad resonance (ΔB∼21 mT) at g≈2.00. Our ELDMR measurements show that this is associated with the blue emission and we ascribe this resonance signal to a deep Zn-related acceptor. A second resonance, resolved in EDMR, is tentatively identified as a deep donor trap. Based on our results we propose a model for the blue emission from these diodes. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114350
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  • 6
    Electronic Resource
    Electronic Resource
    Characterization of a large superconducting split pair magnet for swept field measurements (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 1753-1755 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A Hall probe was inserted into the magnet of an optically detected magnetic resonance (ODMR) spectrometer to study residual field at zero current, homogeneity, and hysteretic effects. Residual fields were on the order of 10 mT at zero current. The magnet was homogeneous to within one part in 8000 or better over a region of 2.5 cm along its vertical axis. Several hysteresis loops were studied for field sweeps. The largest shifts were about 10 mT. Using the information collected, recommendations are made on how to improve precise field measurements for ODMR.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141950
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  • 7
    Electronic Resource
    Electronic Resource
    Recombination processes in InxGa1−xN light-emitting diodes studied through optically detected magnetic resonance (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3123-3125 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optically detected magnetic resonance (ODMR) has been observed on photoluminescence from InGaN light-emitting diodes (LEDs) under low photoexcitation conditions. The samples have the usual p-i-n structure but without etching or metallizations. Distinct ODMR features from the recombining electron and hole are found with strength that indicates significant charge separation and long lifetimes (〉100 ns). The electron and hole g tensors are determined for green and extra-blue LEDs. The recombination is assigned to electrons in the InGaN quantum well (QW) and holes either bound at Mg acceptors outside the well or localized at potential minima in the QW but spatially separated from the electrons. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122693
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  • 8
    Electronic Resource
    Electronic Resource
    Identification of VSe-impurity pairs in ZnSe:N (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1112-1114 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optically detected magnetic resonance (ODMR) of heavily nitrogen-doped ZnSe at 24 GHz reveals an anisotropic spectrum which can be assigned to a deep donor comprised of a Se vacancy paired with an impurity. The newly resolved spectrum is trigonal along 〈111〉 with g(parallel)=2.0072(2) and g⊥=2.0013(2). Comparison of this g tensor with previous work leads to the assignment of the spectrum to VSe-X, where X is most probably Cu or Ag. Combining this result with previous photoluminescence and ODMR work shows that ZnSe:N has three distinct donors which include both impurities and intrinsic defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112114
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  • 9
    Electronic Resource
    Electronic Resource
    Observation of optically detected magnetic resonance in GaN films (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2673-2675 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optically detected magnetic resonance has been observed from GaN. Two magnetic resonances have been detected on the 2.2 eV-deep photoluminescence band. The first resonance is sharp [full width at half-maximum (FWHM) ∼2.2 mT] with g(parallel)=1.9515±0.0002 and g⊥=1.9485±0.0002 and is assigned to conduction electrons, in agreement with recent electron paramagnetic resonance (EPR) studies of similar samples. The second feature, which has not been seen by EPR, is much broader (FWHM∼13 mT) with g(parallel)=1.989±0.001 and g⊥=1.992±0.001. These parameters indicate a deep state. A tentative assignment is made to a deep state associated with the N vacancy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110416
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  • 10
    Electronic Resource
    Electronic Resource
    ON THE CALCULATION AND INTERPRETATION OF NATIONAL ACCOUNTING MATERIAL IN EAST AFRICA (1962)
    Oxford, UK : Blackwell Publishing Ltd
    Review of income and wealth 1962 (1962), S. 0 
    Details
    ISSN: 1475-4991
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Economics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1475-4991.1963.tb01012.x
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