Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
82 (1997), S. 2156-2163
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Minority-carrier lifetime damage coefficients for 1 MeV electron, 3 MeV proton, and 6 MeV alpha particle irradiation of n-type (4.5×1015 and 1.3×1017 cm−3) and p-type (2.5×1017 cm−3) InP have been measured using time-resolved photoluminescence. These values are relatively insensitive to carrier type and show a slight increase with increasing carrier concentration. Evidence of comparable electron and hole capture lifetimes is found for the dominant recombination defect. The effect of 3 MeV proton and 6 MeV alpha particles relative to 1 MeV electrons is an increase in the lifetime damage coefficient by factors of about 104 and 105, respectively. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.366023
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