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  • 1
    Electronic Resource
    Electronic Resource
    A study of 2H trapping and release in 2H+-irradiated YBa2Cu3O7−δ /MgO〈100〉 (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 344-352 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A thin-film sample of YBa2Cu3O7−δ on MgO was irradiated at room temperature with 50-keV 2H+ (deuterium) to a dose of 1×1016 ions cm−2. The film was mainly c-axis textured film, ∼360–420 nm thick, deposited by sputtering on 〈100〉 MgO substrate. The as-implanted sample was divided into several pieces and annealed in a flowing oxygen ambient using (i) a rapid thermal annealing oven, at various temperatures between 450 and 940 °C, and (ii) a conventional annealing furnace, at various temperatures between 100 and 350 °C. Analysis by secondary-ion mass spectroscopy shows that the implanted 2H is a fast diffuser in the 123 phase. The apparent activation temperature (energy) for 2H release from the initial traps within the YBCO film during the anneal is estimated to be ∼175 °C (∼0.97 eV), which is obviously lower than the apparent activation temperature (energy) for 2H release from the initial traps within the MgO substrate (∼550 °C, i.e., ∼1.78 eV). At 200 °C the diffusivity of 2H in the YBCO film is estimated to be ∼1.4×10−13 cm2/s. In the irradiated MgO, during the anneal the migration and release of 2H is thought to be radiation enhanced around the higher damage region. No diffusional broadening or diffusion tail toward the deeply undamaged region was observed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360681
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  • 2
    Electronic Resource
    Electronic Resource
    A study of 2H trapping in YBa2Cu2O7−δ /LaAlO3 〈100〉 samples under 2H+ irradiation (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4081-4084 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A c-axis oriented YBa2Cu3O7−δ film, 180–230 nm thick, deposited onto 〈100〉 LaAlO3 by dc sputtering was irradiated at room temperature with 50 keV 2H+ (deuterium) ions to a dose of 1×1016 cm−2. Secondary-ion-mass spectroscopy analysis shows that after implantation the implanted 2H is trapped in both the film and the substrate. For example, when the thickness of the YBCO film is equal to ∼180 nm, it contains about 4.5% of the retained dose. The as-implanted 2H distribution is essentially Gaussian-like and the depth (Rˆp) of maximum 2H concentration is ∼485 nm. It is obvious that the target crystallinity has to be taken into account for the range data, since the experiment values (Rˆp,R¯p, and ΔRp) are obviously larger than the corresponding values from the transport of ions in matter code. This implantation makes the YBa2Cu3O7−δ film more granular. Within the irradiated LaAlO3 substrate, a damaged band was observed by cross-sectional transmission electron microscopy, which was centered at about 85% of Rˆp(exp).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357005
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  • 3
    Electronic Resource
    Electronic Resource
    In situ secondary ion mass spectrometry study of the surface oxidation of silicon using 18O tracer (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2173-2176 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation and growth of SiO2, pertaining to normal incidence oxygen bombardment of silicon in secondary ion mass spectrometry analysis, has been studied using in situ implantation of 18O+ tracer. At the chosen energy of 15-keV O+, buried layer formation has been shown to occur prior to the formation of a continuous surface oxide layer. Supersaturation of oxygen within the oxide layer was found to give rise to a high oxygen mobility, with a diffusion coefficient of the order of 10−14 cm2/s, resulting in a large desorption flux at the front surface. From preferential sputtering considerations, the surface concentration was found to be close to that of SiO2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341081
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  • 4
    Electronic Resource
    Electronic Resource
    Analysis of thin-film silicon-on-insulator structures formed by low-energy oxygen ion implantation (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3605-3612 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The characteristics of the formation and growth of buried oxide layers, formed by oxygen implantation into silicon at lower energies (50–140-keV 16O+), have been studied using secondary-ion mass spectrometry. Some results have been checked and compared with the results obtained by Rutherford backscattering and cross-sectional transmission electron microscopy. The critical doses, required to form a continuous buried stoichiometric oxide layer during implantation (ΦIc) and after annealing (ΦAc) have been estimated from experimental results. The thicknesses of the silicon overlayer (TASi) and buried silicon dioxide layer (TASiO2) for the annealed wafers have also been estimated. A set of semi-empirical formulas for ΦIc, ΦAc, TASi, and TASiO2 has been introduced. These formulas can be used to quickly calculate the critical doses and the layer thickness values.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349257
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  • 5
    Electronic Resource
    Electronic Resource
    An investigation of as-implanted material formed by high dose 40 keV oxygen implantation into silicon at 550 °C (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 82-85 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Device grade 〈100〉 single crystal silicon wafers have been implanted with 40 keV oxygen ions (16O+) over the dose range of 1×1017–8×1017/cm2 at a temperature of 550±10 °C. Transmission electron microscopy, ion channeling, and secondary ion mass spectroscopy studies show that during implantation the critical dose required to form a buried oxygen-rich amorphous (SiOx, x〈2) layer is lower than 1×1017 O+/cm2. As the dose increases from 1×1017 to 4×1017/cm2 the thickness of the buried SiOx layer increases and there is a corresponding decrease in the thickness of the single crystal silicon top layer, with the oxygen concentration and residual radiation damage playing important roles in determining its position and thickness. A dose of 5×1017/cm2 results in a continuous surface amorphous layer, with a buried SiO2 sublayer being formed in the region corresponding to the implanted oxygen peak. With further increasing dose, the buried SiO2 sublayer grows primarily towards the surface. The results for the sample implanted at a dose of 1×1017/cm2 show that surface defects can be attributed to agglomeration of interstitial silicon atoms created by the internal oxidation process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355201
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  • 6
    Electronic Resource
    Electronic Resource
    A transmission electron microscope investigation of the dose dependence of the microstructure of silicon-on-insulator structures formed by nitrogen implantation of silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3503-3511 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscope studies have been made of (100) silicon wafers implanted at 500 °C with 200-keV 14N+ ions to doses of either 0.25, 0.75, or 1.4×1018 cm−2. For all of these specimens, the as-implanted wafers contained a buried amorphous layer with a damaged upper single-crystal silicon layer. For the 1.4×1018 cm−2 specimen, the amorphous layer contained bubbles. Wafers subsequently annealed at 1200 °C in order to form silicon-on-insulator structures showed the following. For the 0.25×1018 cm−2 specimen, there was a buried discontinuous polycrystalline α-Si3N4 layer, and an upper silicon layer with no observable defects. For the 0.75×1018 cm−2 specimen, there was a buried continuous polycrystalline α-Si3N4 layer containing small silicon islands, and an upper silicon layer either without defects or with microtwins adjacent to the nitride/silicon interface. For the 1.4×1018 cm−2 specimen, there was a buried multilayer structure with the middle layer consisting of substantially single-crystal α-Si3N4 free from silicon islands but containing bubbles; and an upper silicon layer with microtwins and threading dislocations. For the 0.25 and 0.75×1018 cm−2 specimens, the α-Si3N4 had often grown epitaxially in the single-crystal silicon. For the 0.75×1018 cm−2 specimen, such epitaxy had less often occurred. For the 1.4×1018 cm−2 specimen, such epitaxy was not observed. These structural results are correlated with the implantation conditions and nitrogen depth profiles obtained by secondary ion mass spectrometry. The mechanisms responsible for producing the structures are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348491
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  • 7
    Electronic Resource
    Electronic Resource
    Secondary ion mass spectroscopy study of Au trapping and migration in the Au-irradiated YBa2Cu3O7−δ film (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2738-2740 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The range data and migration of Au in YBa2Cu3O7−δ film were studied with implanted 197Au (1.5 MeV 5×1015 Au+/cm2) as a tracer. The film was a c-axis oriented film, ∼750 nm thick, deposited by high-pressure planar dc sputtering on 〈100〉 LaAlO3. Analysis by secondary ion mass spectroscopy shows that the as-implanted Au concentration distribution is essentially Gaussian-like and the depth (Rˆp) of maximum Au concentration (∼1.2 wt %) is 201 nm. The projected range (R¯p) and (Rˆp) are found to be in very good agreement with the simulated data by TRIM−95, whereas the measured "straggle'' (ΔRp*) is about 20% larger than that by TRIM−95 simulation. It has also been found that the implanted 197Au starts to migrate within the film at a temperature between 650 and 700 °C, which is much higher than that for the implanted 2H (∼175 °C) and the implanted 18O (between 250 and 300 °C) in c-oriented YBa2Cu3O7−δ films. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115582
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  • 8
    Electronic Resource
    Electronic Resource
    Oxygen isotopic exchange between an 18O+ implanted Si layer and a natural SiO2 capping layer during high-temperature annealing (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2812-2814 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To understand the effects of the SiO2 capping layer on the growing buried SiO2 layer a silicon wafer was implanted at 680 °C with 90 keV 18O+ to a dose of 4.3×1017 18O+/cm2. After the deposition of an ∼500 nm natural SiO2 cap by the plasma sputtering, one piece of the implanted wafer was annealed at 1360 °C for 6 h in a quartz silica tube in flowing nitrogen. There is clear evidence of diffusional mixing of the oxygen isotopes from the cap into the 18O+ implanted layer during this annealing step, indeed a surprisingly large amount has taken place, in that approximately 41% of 18O contained within the buried SiO2 layer has been exchanged with the cap.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110295
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  • 9
    Electronic Resource
    Electronic Resource
    Study of the microstructure of low energy (70 keV) oxygen implanted silicon (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3130-3132 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Device grade (100) single crystal silicon wafers have been implanted with 70 keV oxygen ions over a dose range from 3.3×1017 /cm2 to 10×1017/cm2 at a temperature of 680 °C. The wafers were subsequently annealed at 1320 °C for 6 h. Transmission electron microscopy and ion channeling studies show that both the as-implanted microstructure and the damage distribution play an important role in determining the final microstructure of the annealed wafer. As the dose increases so does both the values of χmin for both as-implanted and annealed wafers, and the threading dislocation density in the silicon overlayer of the annealed wafers. For the wafer implanted with 70 keV oxygen ions at the lowest dose (3.3×1017/cm2), the threading dislocation density in the silicon overlayer after annealing was less than 105/cm2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105761
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  • 10
    Electronic Resource
    Electronic Resource
    Fabrication of an Anode-Supported Gadolinium-Doped Ceria Solid Oxide Fuel Cell and Its Operation at 550°C (2005)
    Oxford, UK : Blackwell Science Inc
    Journal of the American Ceramic Society 88 (2005), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Ce0.9Gd0.1O2−x (CGO) layers were deposited onto nonconductive porous NiO–CGO supports by electrophoretic infiltration, and then compacted by isostatic pressing to achieve a high packing density of the deposited layer. The bilayers were sintered to give dense CGO layers at 1290°C in air. A fuel cell comprising an La0.6Sr0.4Co0.2Fe0.8O3−x cathode, a 10-μm CGO electrolyte, and a Ni–CGO anode was tested at 550°C with humidified 10% H2 and air. The cell showed an open circuit voltage of 0.86 V and delivered a steady current of about 470 mA/cm2 at a terminal voltage of 0.24 V.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1551-2916.2005.00251.x
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