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  • 1
    Electronic Resource
    Electronic Resource
    Formation of highly oriented diamond film on (100) silicon (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 3660-3666 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly oriented diamond particles are deposited on mirror-polished (100) silicon substrates in a bell-jar-type microwave plasma deposition system using a three-step process consisting of carburization, bias-enhanced nucleation and growth. By adjusting the geometry of the substrate and substrate holder, very dense disk-shaped plasma is formed over the substrate when the bias voltage is below −200 V. This dense plasma is a prerequisite for the high orientation and is not obtained simply by increasing microwave power, but is obtained by introducing a graphite block between the substrate and the substrate holder. The plasma is concentrated over the substrate with a thickness of several millimeters. From the results of the optical emission spectra of the disk-shaped dense plasma, it is found that the concentrations of atomic hydrogen and hydrocarbon radicals are increased with negative bias voltage. It is also found that the highly oriented diamonds are deposited in the region, where the intensity ratios of carbonaceous species to atomic hydrogen are saturated. As a result, it is suggested that the highly oriented diamonds are obtained by a combination of the high dose of carbonaceous species and the increased hydrogen etching effects. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365486
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  • 2
    Electronic Resource
    Electronic Resource
    Deposition of heteroepitaxial diamond film on (100) silicon in the dense plasma (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 756-758 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Almost perfectly oriented heteroepitaxial diamond film was deposited on the (100)Si substrate by the carburization, bias-enhanced nucleation, and growth process in a dense plasma using a bell-jar-type microwave-plasma chemical vapor deposition (CVD) system with an ASTeX 1.5 kW magnetron plasma source. This dense plasma was a prerequisite for the perfect orientation and was not obtained simply by increasing microwave power, but was obtained by introducing a graphite block between the substrate and the substrate holder. The plasma was concentrated over the substrate especially at the four corners with a thickness of several millimeters. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116732
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  • 3
    Electronic Resource
    Electronic Resource
    The effects of oxygen on diamond synthesis by hot-filament chemical vapor deposition (1995)
    Springer
    Journal of materials science 6 (1995), S. 28-33 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The effects of oxygen addition on the synthesis of diamond are extensively studied by using the hot-filament chemical vapor deposition (HFCVD) method, in which it is simple and easy to control the deposition parameters independently. Diamond films are deposited on silicon wafers under the conditions of substrate temperature 530–950
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00208131
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