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  • 1
    Electronic Resource
    Electronic Resource
    Formation of Aluminum Nitride Film for High Power Soft X-Ray Source Using Ion-Beam Assisted Deposition Method (2005)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 107 (Oct. 2005), p. 43-46 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: An aluminum nitride (AlN) target for Al-Kα X-ray source with high power and long service life has been developed by N2 + ions assisted Al vapor deposition method (IBAD). The AlN film formations were carried out at the Al deposition rate varied from 2.0 nm/s to 0.15 nm/s with a fixed low-energy N2 + ion of 1 keV. The films were deposited on Cu substrate at room temperature. The AlN films were characterized by an X-ray diffraction, an electron probe X-ray microanalysis and a Knoop-hardness measurement. The AlN deposited at the Al deposition rate of 0.5 nm has a N/Al ratio of 0.4, a Knoop-hardness of ~1500 and a low resistance of ~0.2 [removed info]. Comparison of durability test between the AlN target and a conventional Al target was performed. It has been revealed, after 500 hours under an electron bombardment of 300 mA at 20 kV, that there were no change of morphology and X-ray intensity on the AlN-surface whilst cracks due to the heat-cycle fatigue covered the Al-surface
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/21/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.107.43.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Production of organosilicon ions for SiC epitaxy : The 8th international conference on ion sources (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 1157-1159 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The production of organosilicon ions in a Freeman-type ion source were studied for SiC heteroepitaxial growth on a Si wafer. One of the possibilities for SiC epitaxy is a low energy deposition of an organosilicon ion beam. The advantage of this technique is that the organosilicon ion already has a binding of Si and C. The organosilicon ion usually also has a dipole moment which is useful for atomic arrangement on a depositing surface. Methylsilane and dimethylsilane were introduced in a Freeman-type ion source and discharged for ionization. Because of fragmentation, methylsilylene ions and methylsilicenium ions were produced. The ions were accelerated and mass selected in order to create a well defined ion beam. The energy distribution, measured by a plasma monitor, was ±1 eV. By using this ion beam, heteroepitaxitial growth of 3C-SiC on Si was successfully created. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150414
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  • 3
    Electronic Resource
    Electronic Resource
    Titanium nitride for transparent conductors (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1048-1049 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transparency of thin films of the electroconductive titanium nitride was demonstrated. Titanium nitride has a high hardness and a high resistance against corrosion, and it is electroconductive. Its color is gold, and it is usually not transparent. Materials can be transparent if they are much thinner than the wavelength of visible light. Formerly, there was no technique available to form such a thin TiN film which is also electroconductive, because very thin TiN crystals grow as small islands. However, by using the dynamic ion beam mixing technique, we succeeded in forming continuous, transparent, and conductive TiN films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110966
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