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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1356-1361 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A kinetic model for diffusional growth of silicides in thin-metal-film–silicon systems is proposed. The time dependence of the growth has been shown to be a function of the morphology of the growing silicide and the controlling diffusion process (diffusion in the film, interface diffusion). If the phase grows only in depth the parabolic dependence of silicide thickness h on time t in most cases follows the relation h(approximately-equal-to)t0.5. If silicide grows only in width w, then w(approximately-equal-to)t. In the case of simultaneous change of thickness and width when h/w=const the growth is proportional to t0.33.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3833-3838 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Groove profiles are computed under isotropic conditions for the intersection of a periodic array of grain boundaries with an external surface, assuming that grain boundary flux I is directed to (I(approximately-greater-than)0) or away from (I〈0) the surface. When I=0, the surface assumes an equilibrium (time-independent) profile. For I≠0, in a range bounded by upper and lower limits that depend on geometry and material parameters, a global steady-state develops in which the entire surface advances (I(approximately-greater-than)0) or recedes (I〈0) from its original position at constant velocity. Beyond these limits, the surface near the groove roots becomes diffusively detached from the remaining surface. A rapidly growing ridge (I(approximately-greater-than)0) or slit (I〈0) then develops along each grain boundary, whose tip ultimately translates at constant velocity in a local steady state, leaving the remaining surface behind. These velocity regimes govern the ultimate stability of polycrystalline materials subjected to large electric (electromigration) or stress (creep) fields, especially in thin films where grain size approximates film thickness. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6670-6676 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Advancement of a fine slit along a planar grain boundary in an electric field E0, applied parallel to the slit, is investigated by considering electromigration along both the grain boundary and the slit surface. Electrically induced flux in the grain boundary Igb (+ toward the slit tip) and both electrically and curvature-induced fluxes on the slit surfaces are considered assuming 2Is〉Igb, where Is is the flux (+ away from the slit tip) on each of the parallel slit surfaces far removed from the tip. Steady-state solutions of the transport equations are classified according to the value of a parameter β=tan−1 (2Is/Igb) which, under reasonable assumptions, depends on material parameters only. For 5π/4≥β≥β2, unique steady-state solutions exist; for β2〉β〉β1, multiple steady-state solutions occur; below β1≥π/4, no steady-state solution is possible. Since β1〈π/2, Igb〉0 (flux exiting the grain boundary into the slit) for all cases in which no steady-state solution is possible. In the case of multiple solutions, those corresponding to smallest width (and hence largest velocity) are determined. For all steady-state solutions, slit width and tip velocity scale as E−1/20 and E3/20, respectively. Results also apply to the propagation of a slit within a grain or along a passivation layer. Generally, tip velocities can approach 1 nm/s (3.6 μm/h), thereby representing a likely failure mechanism in fine-line (near bamboo structure) interconnects. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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