Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
60 (1992), S. 704-706
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
AlxGa1−xAs alloys undergo a direct-to-indirect gap transition when the Al concentration x is increased, or when hydrostatic pressure P is applied to a direct-gap sample of fixed composition. It is usually assumed that either hydrostatic pressure or alloying produce a Γ–X conduction band crossing responsible for the change in the nature of the gap. A critical discussion regarding this widely adopted criterion for the direct-to-indirect gap transition is presented. Alloying and pressure effects in the electronic properties of AlxGa1−xAs are determined through the small crystal approach with a 64-site basic cluster. Finite-size effects are discussed. The photoluminescence emission intensity is calculated as a function of x and P, and physically reliable criteria for the transition from the direct-to-indirect gap regimes based on these results are proposed. A critical concentration consistent with experimental results associated to this change of regime is obtained from our data.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.106543
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