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  • 1
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Physics and Chemistry of Solids 49 (1988), S. 969-973 
    ISSN: 0022-3697
    Keywords: Excitons ; II-VI semiconductors ; defects
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 109 (1998), S. 4047-4051 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We present a theoretical study on the behavior of the energy gap of H2–He mixtures under pressure. The calculations are performed within a large-unit-cell tight-binding formalism parametrized for solid molecular H2. We investigate how the energy gap is affected at a given density by the He content as well as by the orientational and the positional disorder of the hydrogen molecules. We find that the increase of the He content in the mixture systematically increases the energy gap, shifting the insulator-to-metal transition to higher pressures. For small values of the He content x, we also find that the lattice constant at the metal–insulator transition scales as (1−x)1/3. This scaling remains approximately valid to estimate the energy gap in the insulating regime. This provides a simple rule to obtain the energy gap of H2–He mixtures under pressure from the energy gap of pure H2 under pressure. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3283-3287 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photo Hall concentration and mobility were measured for two molecular beam epitaxy-grown samples having a silicon planar-doped structure in the GaAs layer of a GaAs/AlGaAs heterojunction. The nominal silicon concentration for both samples was 1.5×1013 cm−2 and the distance between the ideal localization of the doped plane and the interface was adjusted to be 15 A(ring). The difference between the two samples is the growth direction. The Hall measurements were carried out at 77 K both in darkness and under illumination using an infrared light emitting diode as light source. Photoexcited effects indicate the presence of silicon atoms inside the undoped AlGaAs layer and that the silicon profile spreads mainly in the growth direction. Self-consistent electronic structure calculations, in the effective-mass approximations, were performed assuming doping profiles that simulate both samples. The calculations show that parallel conduction occurs when the growth direction is from GaAs to AlGaAs. This is consistent with the Hall measurements. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2659-2665 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoconductivity, photo-Hall free carrier concentrations and mobilities were measured on molecular beam epitaxy-grown silicon planar-doped GaAs samples, with silicon concentrations between 1.4×1012 and 8.8×1013 cm−2, as functions of temperature. In all samples, the planar-doped region is placed 0.2 μm below a n+-doped cap layer at the surface. We perform a systematic investigation of the persistent as well as nonpersistent photoconductivity effects which are present in all samples. A phenomenological analysis shows the presence of two distinct conduction channels, one with n characteristics and the other with p characteristics. These channels can present either bulk or two-dimensional characteristics, depending on the light intensity and on the temperature. A model based on spatial separation between electrons and holes is proposed to account for the persistence of the photoconductivity effect. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6541-6544 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have carried out the time, temperature, and illumination dependencies of the current density in a semi-insulating GaAs sample grown at 300 °C under strong electric field. Standard ohmic behavior was observed at room temperature. A negative differential behavior as a function of the applied electric field was observed by lowering the temperature and increasing the photon flux, and this phenomenon was associated to the field-enhanced trapping effect. We have fit our data with a model for enhanced capture by a multiple-phonon emission capture process assisted by the applied electrical field. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1561-1563 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate, through first-principles calculations, the effects of a flattening distortion on the electronic properties of a semiconductor carbon nanotube. The flattening causes a progressive reduction of the band gap from 0.92 eV to zero. The band-overlap insulator-metal transition occurs for an interlayer distance of 4.6 Å. Supposing that the flattening of the nanotube can be produced by a force applied by a scanning microscope tip, we estimate that the force per unit length of the nanotube that is necessary to reach the insulator-metal transition is 7.4 N/m. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1252-1254 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have carried out dynamic low-temperature measurements of the current density for a semi-insulating GaAs sample grown at 300 °C. The standard photoquenching (PQ) effect was observed at low temperatures. We found that high electric fields inhibit the PQ effect and that the recovery of the PQ effect was made possible by simultaneous application of a high electric field and illuminating the sample with infrared light. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2984-2986 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use first-principles calculations to investigate the atomic geometries and formation energies of vacancies (VN,VB) and antisites (BN,NB) in cubic boron nitride. We find that VN and VB are the most stable defects in p-type and n-type conditions, respectively. They also exhibit intrinsic donor (VN) and acceptor (VB) characters, which makes them good candidates for compensation. The equilibrium geometries show large outward breathing relaxations for both vacancies and for BN, with a slight Jahn–Teller distortion from Td symmetry. For NB in neutral and negatives charge states, we find an off-center distortion, inducing a negative-U behavior. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2423-2425 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the effects of atomic interdiffusion in the optical properties of AlAs/GaAs quantum wells through tight-binding model calculations. Ensembles of supercells, each cell containing up to ∼104 atoms with periodic boundary conditions, are used to simulate the heterostructures. The oscillator strength f of optical transitions at the absorption threshold is calculated as a function of the quantum-wells width W and the diffusion length L. As L increases, f undergoes a discontinuous transition to zero, indicating indirect-gap behavior for L larger than a critical value of the diffusion length. A unified behavior of f as a function of L/W1.7 is found. This permits relating optical properties to structural properties through simple fitting formulas. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2258-2260 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photo-Hall free electron concentrations were measured on molecular beam epitaxy grown silicon planar-doped GaAs samples, with silicon nominal concentration ranging from 1.4×1012 to 8.8×1013 cm−2, as function of temperature. We found conclusive results showing competition between positive photoconductivity and negative persistent photoconductivity effects. At temperatures below a critical Tc, the negative photoconductivity effect is dominant, while above Tc the positive effect dominates. We also found some evidence that the positive effect is related to spatial charge separation and that the negative effect is related to the DX center.
    Type of Medium: Electronic Resource
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