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  • 1
    Electronic Resource
    Electronic Resource
    Frustrated antiferromagnetism at heterointerfaces in a semiconductor superlattice: MnSe/ZnSe (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4835-4838 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The role of interfaces in influencing behavior of antiferromagnetic semiconductors has been studied in the new strained layer MnSe/ZnSe superlattice system, grown by molecular-beam epitaxy, with individual MnSe layers approaching the monolayer limit. Large paramagneticlike contributions to overall magnetization are observed at low temperatures. Such anomalous characteristics are interpreted in terms of frustration against antiferromagnetic ordering by microstructure effects at the heterointerfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338987
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  • 2
    Electronic Resource
    Electronic Resource
    Photonic band gap airbridge microcavity resonances in GaAs/AlxOy waveguides (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1578-1580 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photonic band gap waveguide microcavities were designed, fabricated, and measured in a high-dielectric-contrast GaAs/AlxOy III–V compound semiconductor structure. The photonic crystal is defined by a regularly spaced one-dimensional array of holes in the waveguide. By controlling the spacing between the two central holes, the microcavity is formed. The waveguide microcavity is suspended in the airbridge geometry to further increase optical confinement. Resonance states with cavity quality factors as high as 360 were measured at wavelengths near 1.55 μm, with modal volumes as small as 0.026 μm3. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372055
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  • 3
    Electronic Resource
    Electronic Resource
    Photoluminescence and excitation spectra of Zn1−xMnxSe films and superlattices grown by molecular-beam epitaxy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3011-3019 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of photoluminescence and photoluminescence excitation spectra at liquid helium temperatures are presented for films of ZnSe, Zn1−xMnxSe (0≤x≤0.33), and multilayer structures ZnSe/Zn1−xMnxSe (x=0.23, 0.33, and 0.51) grown by molecular-beam epitaxy. All samples investigated had the zinc-blende structure. The temperature dependence of the luminescence from the superlattices has been studied up to 300 K. Good quality of the samples is evidenced by the reduction of impurity- or defect-related long wavelength emissions. Several new features in the photoluminescence spectra were resolved (e.g., a region of low-intensity luminescence ending with a sharp cut off at about 75 meV above the main line) which were not observable in bulk samples. The presence of internal strains in the epitaxially grown superlattice samples results in the observed splitting of the heavy- and light-hole valence bands. Furthermore, the strain present can actually dominate over the quantum confinement to produce a net red shift of the near band-edge features. Both the red shifts and the heavy-to-light-hole band splitting are consistent with the estimates of the lattice mismatch-induced strains.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337851
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  • 4
    Electronic Resource
    Electronic Resource
    Deep levels in Ga-doped ZnSe grown by molecular-beam epitaxy (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3656-3660 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results of a deep-level transient spectroscopy study of Ga-doped ZnSe thin films grown by molecular-beam epitaxy are presented. Two prominent deep levels were observed in all the samples investigated. The concentration of the trap detected at 0.34 eV below the conduction-band edge was essentially independent of the doping concentration and is attributed to native defects arising from Se vacancies in the ZnSe films. The second level with an activation energy of 0.26 eV shows a very strong doping dependence and is tentatively identified as arising from dopant-site (gallium-on-zinc-site) defects complexed with selenium vacancies. Preliminary results also indicate that planar doping of ZnSe significantly reduces the concentration of the Ga-vacancy complex.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344077
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  • 5
    Electronic Resource
    Electronic Resource
    Air-bridge microcavities (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 167-169 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We introduce and analyze a new type of high-Q microcavity consisting of a channel waveguide and a one-dimensional photonic crystal. A band gap for the guided modes is opened and a sharp resonant state is created by adding a single defect in the periodic system. An analysis of the eigenstates shows that strong field confinement of the defect state can be achieved with a modal volume less than half of a cubic half-wavelength. We also present a feasibility study for the fabrication of suspended structures with micron-sized features using semiconductor materials. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114655
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  • 6
    Electronic Resource
    Electronic Resource
    High fluence ultrafast dynamics of semiconductor saturable absorber mirrors (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3841-3843 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ultrafast nonlinear dynamics of InGaAs/InP semiconductor saturable absorber mirrors are investigated using reflective pump–probe measurements. At high fluence, ultrafast induced absorption begins to dominate over absorption bleaching. Above the InGaAs quantum well band gap, the differential reflectivity shows a ∼1 ps transient due to nonequilibrium carrier dynamics. Below band gap, the signal is dominated by a strong two-photon absorption component followed by induced absorption that decays with a time constant of ∼5 ps; these components are attributed to nonlinear absorption and subsequent carrier diffusion in the InP layer. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125474
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  • 7
    Electronic Resource
    Electronic Resource
    Polarization-dependent optical gain and absorption spectra of (Cd,Mn)Te and (Zn,Mn)Se multiple quantum well structures (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 499-501 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The absorption and gain spectra for TE and TM modes in (100) oriented (Cd,Mn)Te and (Zn,Mn)Se multiple quantum well (MQW) structures have been measured by observing the photoluminescence from a cleaved edge. In (Cd,Mn)Te MQW's the TE mode absorption and gain are dominant, as observed earlier in (Ga,Al)As MQW's; in (Zn,Mn)Se MQW's, however, we observe a clear dominance of the TM mode near the band edge. Whereas the TE mode dominates the gain spectra of a (Cd,Mn)Te MQW, the TM mode dominates the gain spectra of a (Zn,Mn)Se MQW, providing the first report of TM-polarized stimulated emission from a MQW structure. The opposite behavior of (Cd,Mn)Te and (Zn,Mn)Se MQW's is ascribed to the opposite sense of the uniaxial strain in these systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98988
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  • 8
    Electronic Resource
    Electronic Resource
    Resonant Raman scattering and exciton-optical phonon coupling in CdTe/(Cd,Mn)Te quantum wells (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 667-669 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resonant Raman scattering at the E0 gap from longitudinal optical phonons in CdTe/(Cd,Mn)Te multiple quantum wells has been studied near the strain split n=1 exciton ground state. A large resonance enhancement is observed with distinct incoming and outgoing channels, in agreement with luminescence excitation spectra. Phonons are observed from CdTe wells and (Cd,Mn)Te barriers, indicative of small valence-band offsets for this superlattice system. At extreme resonance, striking linewidth broadening and damping effects for the alloy phonon modes are witnessed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98328
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  • 9
    Electronic Resource
    Electronic Resource
    Excitonic trapping from atomic layer epitaxial ZnTe within ZnSe/(Zn,Mn)Se heterostructures (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1080-1082 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe-based structures have been fabricated, consisting of monolayers of ZnTe grown by atomic layer epitaxy spaced by appropriate dimensions to approximate a Zn(Se,Te) mixed crystal; this method has been used to overcome the difficulties encountered in the molecular beam epitaxy (MBE) of the alloy with a low Te concentration. Reported work has shown that blue-blue/green luminescence, originating from exciton self-trapping at Te sites in Zn(Se,Te) bulk crystal alloys, is significantly more intense than the light emitted from ZnSe. Luminescence originating from ZnTe-containing ZnSe/ZnTe superlattice and ZnSe/(Zn,Mn)Se multiple quantum well structures was used to illustrate how the presence of ZnTe acts to trap excitons. Optical signatures of the MBE-grown structures were similar to those of the random alloy, indicating that the exciton self-trapping mechanism is important to the interpretation of recombination processes in structures containing ZnSe/ZnTe heterointerfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99217
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  • 10
    Electronic Resource
    Electronic Resource
    Low interface state density at an epitaxial ZnSe/epitaxial GaAs interface (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1359-1361 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The capacitance-voltage (C-V) and the current-voltage characteristics of metal/ZnSe/p-GaAs capacitors have been investigated; both epitaxial layers were grown by molecular beam epitaxy. In the capacitor structures highly resistive, stoichiometric ZnSe functioned as the pseudoinsulator on the doped GaAs layers. The capacitance-voltage measurements demonstrated that the capacitors could be biased from accumulation through depletion, and into deep depletion, with current in the range of 10−8 A cm−2. Very little frequency dispersion was observed in the C-V data when measured from 1 kHz to 1 MHz. From the high-frequency C-V curve, the surface state density as a function of position in the GaAs band gap was determined. Surface state densities were comparable to densities reported for (Al,Ga)As/GaAs heterojunctions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100715
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