ISSN:
1573-482X
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract The performance degradation of In0.53Ga0.47As p-i-n photodiodes, subjected to a 220-MeV carbon particle irradiation in the fluence range 1010 to 1013 cm−2, is reported. It is shown that the increase of the dark current scales roughly with the displacement damage created in the n-type InGaAs region. The degradation of the photo-current, on the other hand, does not scale with the displacement damage, for all irradiations studied. Therefore, it is believed that the photo-current suffers from increased surface recombination, which is related to the ionization damage created in the passivation layer.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1008909826332
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