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  • 1
    Electronic Resource
    Electronic Resource
    Hot-Carrier degradation of the Random Telegraph Signal amplitude in submicrometer Si MOSTs (1993)
    Springer
    Applied physics 57 (1993), S. 283-289 
    Details
    ISSN: 1432-0630
    Keywords: 85.30.Tv ; 72.70.+m
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract This paper studies the Hot-Carrier (HC) degradation of submicrometer Si MOSTs by the changes in the Random Telegraph Signal (RTS) parameters. It is demonstrated that the amplitude of a pre-existing RTS is markedly changed after stress. In linear operation, a reduction is generally observed for n-MOSTs, while an increase is found for p-MOSTs. For larger drain voltages, the changes are most pronounced in reverse operation, i.e. with source and drain switched, for a forward stress. Hence, the trap-amplitude asymmetry increases after stress. As is demonstrated, there exists a close correlation between the observed changes in the RTS amplitude and in the static device parameters. A simple, first-order model is derived, showing that the HC stress-induced reduction (n-channel), or increase (p-channel) is proportional to the variation of the oxide/interface charge density near the drain. Alternatively, it is demonstrated that the normalized change in the RTS amplitude is equal to the normalized conductance change of the narrow hot-carrier damaged region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00332604
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  • 2
    Electronic Resource
    Electronic Resource
    Influence of the substrate voltage on the random telegraph signal parameters in submicron n-channel metal-oxide-semiconductor field-effect transistors under a constant inversion charge density (2000)
    Springer
    Applied physics 70 (2000), S. 345-353 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 72.70.m; 72.20.Jv; 85.30.Tv
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. In this paper, the impact of the substrate bias U BS on the parameters of a repulsive random telegraph signal in an n-channel metal-oxide-semiconductor field-effect transistor is studied. Particular attention is paid to the variation of the capture time constant τc with the channel current I in linear operation. It is shown that the strong reduction of τc with I can be explained by the Coulomb blockade effect. The corresponding Coulomb energy ΔE of the charged-near-interface oxide trap is shown to be a strong function of the substrate bias. From the analysis of the experimental results considering surface quantization effects follows that the variation of ΔE with U BS is caused by the change in both the inversion layer surface charge density N s and in the surface electric field F s that influences the distance between the centroid of the inversion layer and the interface. In fact, it will be demonstrated that ΔE can be expressed in function of a single parameter (N s F s 2). Finally, the impact of the substrate bias on the other parameters, i.e., the amplitude ΔI, the emission time constant τe and the distance d of the trap from the interface, will also be addressed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050058
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  • 3
    Electronic Resource
    Electronic Resource
    A study of the kink-related excess low-frequency noise in silicon- on-insulator n-metal-oxide-semiconductor transistors operated at liquid helium temperatures (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1416-1422 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper, the drain voltage dependence of the low-frequency (lf) noise of partially depleted silicon-on-insulator n-metal-oxide-semiconductor-transistors (n-MOSTs) is investigated in detail at liquid helium temperature. As will be shown, an increase in the noise spectral density is observed at the kink position, similar to bulk n-MOSTs operated at 4.2 K. This excess noise introduces a Lorentzian generation-recombination (GR) component in the lf noise spectrum. The physical mechanism underlying the GR noise is thought to be the same as for bulk transistors: ionization and capture in the depletion region of carriers, which are created at the drain. This generates a fluctuation in the depletion charge, which is translated into a fluctuation of the drain current via a change in the threshold voltage. A model will be proposed that is derived from the analysis previously established for the bulk case. Extension of the model to fully depleted, thin-film transistors and to higher temperatures (77 K, 300 K) will be briefly outlined. As will be demonstrated, a good overall agreement between theory and experiment is obtained whereby the key features of the noise overshoot, i.e., its position and amplitude, are consistently reproduced.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351701
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  • 4
    Electronic Resource
    Electronic Resource
    Accurate extraction of the diffusion current in silicon p-n junction diodes (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1054-1056 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An accurate method for the extraction of the reverse diffusion current component in a silicon p-n junction diode is proposed. It combines capacitance–voltage and current–voltage measurements on an array of diodes with different geometry in order to separate the peripheral and the volume leakage current components. The corrected volume capacitance is then used to calculate the depletion width as a function of the reverse bias. Extrapolation of the reverse current to zero depletion width results in the diffusion current part, both for the volume and for the peripheral component. From the temperature dependence, a thermal activation energy of 1.12 eV is obtained. The volume diffusion current density of the p-type Czochralski wafers studied, shows a pronounced substrate dependence, while the peripheral diffusion current density is constant. Finally, the implications for the extraction of the effective bulk recombination lifetime are discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120962
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  • 5
    Electronic Resource
    Electronic Resource
    Impact of oxygen related extended defects on silicon diode characteristics (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5669-5676 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical activity of extended lattice defects formed by interstitial oxygen precipitation in silicon is studied. Their impact on diode characteristics and on minority carrier lifetime is addressed for different initial oxygen contents and pretreatments. The carrier traps present in the substrate are studied with deep level transient spectroscopy and with photoluminescence spectroscopy. The obtained electrical results are correlated with those of structural and chemical characterization using cross-section transmission electron microscopy and Fourier transform infrared spectroscopy. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359209
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  • 6
    Electronic Resource
    Electronic Resource
    Random telegraph signals in silicon-on-insulator metal-oxide- semiconductor transistors (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3647-3653 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Possible physical mechanisms for random telegraph signal (RTS) -like fluctuations in the front-channel drain current of a silicon-on-insulator (SOI) metal-oxide-semiconductor (MOS) transistor are discussed. Particular emphasis is on two RTS mechanisms which are believed to be typical for a SOI MOS transistor. The first one is related to carrier trapping in the Si film, by a deep-level trap in the depletion region. As such, this type of RTS is more or less complementary to the standard behavior, which is caused by carrier trapping through a near-interface oxide trap. Second, it is demonstrated experimentally that by varying the back-gate bias of a thin-film SOI MOS transistor "new'' RTSs may be detected.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356079
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  • 7
    Electronic Resource
    Electronic Resource
    Substrate bias effect on the random telegraph signal parameters in submicrometer silicon p–metal–oxide–semiconductor transistors (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 910-914 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of the substrate bias VBS on the parameters of random telegraph signals (RTSs) in submicrometer silicon p-channel metal–oxide–semiconductor transistors are analyzed. The fractional RTS amplitude increases slightly for more positive VBS, suggesting a close connection with the capture cross section of the corresponding near-interface oxide trap. A strong exponential dependence of the capture time constant on the drain current ID is observed, which can be explained by the transverse-field dependence of the hole capture cross section. The emission time constant on the other shows only a weak dependence on VBS, or ID. Finally, the corresponding low-frequency noise peaks at constant frequency f are studied in detail; excellent agreement is observed between the theoretical Lorentzian spectrum and the experimental peaks. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359018
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  • 8
    Electronic Resource
    Electronic Resource
    The hysteresis and transient behavior of Si metal-oxide-semiconductor transistors at 4.2 K. II. Prekink clockwise hysteresis regime (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3074-3081 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The experimental transient behavior of Si metal-oxide-semiconductor transistors (MOSTs) operated at liquid-helium temperatures in the prekink, clockwise hysteresis regime is described in detail. As is shown, the drain current exhibits a pronounced decay, after switching on the device, both in n- and pMOSTs. The effective "exponential'' time constant τ of the transient is in the order of seconds to hundreds of seconds and is a strong function of the gate, the drain, and the substrate biases. Generally, a strong reduction of τ with increasing drain current is observed. These findings are critically discussed in view of the dominant dopant ionization mechanisms at 4.2 K. It is demonstrated that the reported drain current dependence of the transient time constant can be interpreted by considering shallow-level impact ionization by the channel carriers. It is furthermore demonstrated that the anomalous transients occasionally observed point to the occurrence of the reverse process, namely capture of free carriers. By considering these two mechanisms, a comprehensive model for the prekink hysteresis behavior is established.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352991
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  • 9
    Electronic Resource
    Electronic Resource
    The hysteresis and transient behavior of Si metal-oxide-semiconductor transistors at 4.2 K. I. The kink-related counterclockwise hysteresis regime (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3068-3073 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The experimental hysteresis behavior of Si metal-oxide-semiconductor transistors (MOSTs) operated at liquid-helium temperatures (LHT) is described in detail. It is demonstrated that two different hysteresis regimes can be distinguished: a kink-related counterclockwise and a prekink clockwise regime. The difference in hysteresis sense is related to the different physical mechanisms underlying the phenomena. It is demonstrated that there exists a strong relationship between the hysteresis and the transient behavior of a Si MOST at 4.2 K. The possible transient mechanisms, e.g., self-heating or dopant ionization, are critically reviewed. The transient results presented are in line with the field-assisted ionization of the frozen-out dopant atoms in the Si substrate. For the counterclockwise hysteresis regime an improved analysis is presented, which is based on the original forced depletion layer formation approach. In the companion article the transient behavior in the prekink, clockwise regime is described in detail and discussed in view of the different possible dopant ionization mechanisms at LHT.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352990
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  • 10
    Electronic Resource
    Electronic Resource
    The behavior of silicon p-n junction-based devices at liquid helium temperatures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1016-1024 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper, the forward current-voltage (I-V) characteristics of Si p-n junction diodes, fabricated in different state-of-the-art complementary-metal-oxide-semiconductor (CMOS) technologies, are investigated at liquid helium temperatures. As will be shown, three different I-V regimes can exist: a forward breakdown/hysteresis regime at a turn-on voltage which may be larger than the built-in potential of the junction; a thermionic emission regime, corresponding to a I=A exp(qV/kT) relation and a high-injection space-charge-limited regime, giving rise to a current which is proportional to Vn. The anomalous turn-on behavior can be explained by considering the small barrier for carrier injection, which exists at the "ohmic'' contact. It will be demonstrated that the presence of this forward breakdown is strongly determined by the fabrication technology used. In extreme cases (large-area well diodes) multiple breakdown is observed, indicating an inhomogeneous, filamentary current flow. As will be shown, similar breakdown behavior is observed in more complex junction-based Si devices at 4.2 K; the consequences for deep-cryogenic CMOS circuitry will be briefly addressed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349683
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