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  • 1
    Electronic Resource
    Electronic Resource
    MeV He+ ion induced delamination of diamond films (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3014-3016 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report room temperature delamination of chemically vapor deposited diamond films on a Si substrate due to 1.5 MeV He+ ion bombardment. The delamination of films has been studied by scanning electron microscopy. The threshold fluence at which the delamination takes place has been determined in situ by monitoring the hydrogen signal with the help of elastic recoil detection analysis. Micro Raman measurements show the presence of residual stress (1.19 GPa) in the as-prepared films and its relaxation at the peripheri of the delaminated regions. It is proposed that enhancement of the residual stress during He+ ion bombardment leads to stress saturation conditions which result in the delamination of the brittle diamond films from the film/substrate interface. These findings lead to the possibility of creating ion-beam induced channels in diamond films for device isolation by suitable choice of film/substrate combination. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121525
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  • 2
    Electronic Resource
    Electronic Resource
    Pulsed-laser-induced reactive alloying of Fe-W system under benzene (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4782-4784 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reactive alloying of the Fe-W system under benzene by use of pulsed laser treatment is demonstrated. The as-deposited and processed samples were characterized by employing the techniques of low-angle x-ray diffraction, Rutherford backscattering, conversion electron Mössbauer spectroscopy, and x-ray photoelectron spectroscopy. Formation of ternary phase FeW3C is observed at a lower fluence while its amorphization is observed at a higher fluence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341200
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  • 3
    Electronic Resource
    Electronic Resource
    Effects of preferential sputtering and enhanced diffusion processes on the evolution of La-implanted profile in Ni (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 2977-2979 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An experimental profile of La implanted in a Ni crystal is theoretically described on the basis of a continuity equation for the La concentration, which includes a diffusive relocation of the implanted atoms and the matrix erosion velocity. The La sputtering process is explicitly considered by an appropriate boundary condition. The shape of the experimental La profile as well as the measured retained La dose has been well reproduced. It is shown that the erosion velocity of La atoms is greater than that of Ni atoms by a factor of 2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335191
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  • 4
    Electronic Resource
    Electronic Resource
    Ion-induced room temperature synthesis of low resistive nickel germanide phase (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2363-2365 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low resistivity Ni2Ge phase, a promising candidate as a contact and interconnect material for very large scale integrated circuit applications, has been synthesized by MeV ion beam mixing using Kr and Ar ions at and above room temperatures. Thin films of this phase produced by ion beam mixing show resistivity comparable to the one produced by thermal annealing and is much lower than that of many important silicides. The critical temperature which marks the beginning of the temperature dependent mixing is 326 K. The room temperature mixing efficiency for this system is found to be about an order of magnitude higher than the value predicted by any of the existing ballistic and spike models. The crystalline nature of the mixed region and the occurrence of the Ni2Ge phase have been discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366980
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  • 5
    Electronic Resource
    Electronic Resource
    Electrically active defects in as-implanted, deep buried layers in p-type silicon (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 260-263 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied electrically active defects in buried layers, produced by heavy ion implantation in silicon, using both conventional deep level transient spectroscopy (DLTS) and an isothermal spectroscopic technique called time analyzed transient spectroscopy operated in constant capacitance mode (CC-TATS). We show that CC-TATS is a more reliable method than DLTS for characterization of the heavily damaged buried layers. The major trap produced in the buried layers in p-type Si by MeV Ar+ implantation is found to have an energy level at Ev+0.52 eV. This trap, believed to be responsible for compensation in the damaged layer, shows exponential capture dynamics. We observed an unusually high thermal activation energy for capture, which is attributed to a macroscopic energy barrier for carriers to reach the buried layer. We observe two other majority carrier traps, and also a minority carrier trap possibly due to inversion within the depletion layer. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363992
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  • 6
    Electronic Resource
    Electronic Resource
    Room-temperature synthesis of copper germanide phase by ion beam mixing (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1700-1702 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter reports room-temperature synthesis by ion beam mixing of the ε1-Cu3Ge phase which is a promising candidate for interconnect and contact material in very large scale integrated circuit technology. The resistivity of the mixed sample was found to be nearly the same as the one obtained from thermally prepared films. We briefly discuss the likely mechanisms of phase formation and conclude that reaction kinetics dominates over thermodynamic forces during phase formation. The sequence of phase formation is explained by effective heat of formation rule. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115021
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  • 7
    Electronic Resource
    Electronic Resource
    Pulsed laser heating calculations incorporating vapourization (1981)
    Springer
    Applied physics 25 (1981), S. 127-133 
    Details
    ISSN: 1432-0630
    Keywords: 44.90.+c ; 79.20.Ds ; 81.60.Bn
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We present a scheme for solution of the heat flow equation in one-dimension incorporating melting and vapourization produced under pulsed laser irradiation. The method can be applied to pure materials as well as multilayered structures such as deposited films. The variation of physical properties with temperature can be easily taken into account. Results of calculation are presented for aluminium and for chromium and antimony layers deposited on aluminium. As a consequence of excessive vapourization at high energy densities, the melt depth and the melt duration do not increase beyond a certain limit. The resolidification front velocity is strongly dependent on energy density and can be controlled in an experiment by a careful choice of laser parameters. Some recent experimental data on laser treated chromium films are discussed in light of our calculations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00901284
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  • 8
    Electronic Resource
    Electronic Resource
    Evaluation of early generations for iron chlorosis in relation to productivity in groundnut (Arachis hypogaea L.) (1995)
    Springer
    Plant and soil 175 (1995), S. 219-223 
    Details
    ISSN: 1573-5036
    Keywords: Arachis hypgaea L. ; early generation ; iron chlorosis
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract Five popular but iron-inefficient cultivars were crossed with three efficient genotypes and both parents and F1s were evaluated for iron-efficiency in potted calcareous and noncalcareous soil. The iron-efficient genotypes were dark green or green in both noncalcareous and calcareous soils whereas inefficient types were light green to yellow in calcareous soil. The chlorophyll and active iron (Fe2+) concentration of leaves was less in iron-efficient genotypes compared to efficient types in calcareous soil and reduction of both the parameters from noncalcareous to calcareous soil was considerably high in iron-inefficient lines. There was significant correlation between visual scores, chlorophyll and active iron content. There were no differences among F1s for iron chlorosis and they were all iron-inefficient. The frequency of iron-inefficient plants was higher than the efficient plants in all F2 populations. But most of the productive plants came from iron-efficient segregants indicating strong association between iron-efficiency and productivity. Based on the results selection for iron-efficiency in early generations and extensive evaluation for productivity in advanced generations is suggested for developing varieties for cultivation in calcareous soils.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00011357
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  • 9
    Electronic Resource
    Electronic Resource
    Phase-precipitation studies of Fe-B-Si metallic glasses using Mössbauer spectroscopy (1995)
    Springer
    Journal of materials science 30 (1995), S. 417-425 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Phase-precipitation studies have been performed on samples of the metallic glasses Fe79B16Si5 and Fe78B13Si9, heated in the range 300–475 °C for various times (1–16 h) using 57Fe Mössbauer transmission spectroscopy and X-ray diffraction methods. These measurements have helped in identifying the temperature ranges and annealing durations in which the amorphous structure of these metallic glasses is retained. The results revealed that the thermal stability increases as boron is replaced by silicon in the Fe-B-Si metallic glasses and that these alloys remain amorphous below 450 °C. The various phases precipitated above this temperature were identified as α-Fe, α-(Fe, Si), Fe3B, and Fe2B. The direction of magnetization in the two metallic glasses appears to change upon annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00354406
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