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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 477-481 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A small area of CdTe single crystal within a spot of ≤2 μm diameter has been oxygenated under ambient conditions using 514.5 nm radiation from Ar+ laser. The oxygenation could be monitored using laser Raman spectroscopy, and it has been established that the asymmetric TeO2−3 ion is formed on the surface. The significance of the process for basic material science and technological applications in electronic and optoelectronic devices has been emphasized. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The motivation for this article has been to try to understand the relative phenomenological differences between the behavior of the films of the high-temperature superconductors like YBa2Cu3O7−δ deposited on (a) relatively insulating substrates (like LaAlO3) through sputtering technique and (b) highly metallic substrates (like stainless steel and inconel) through laser ablation method. It is observed that the most prominent Raman bands on LaAlO3 substrate falling near 337, 440, and 503 cm−1 have half widths (defined as the full width at half the maximum intensity) of 22, 42, and 38 cm−1, respectively. The half width gets nearly doubled on the metallic substrates. These results have been attributed to the metal-superconductor interfacial interactions. Further, infrared reflectance measurements and the Kramers–Kronig analysis of the spectra reveal a large difference in the conductivity of the film on LaAlO3 compared to the films on metallic substrates. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1917-1925 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonhydrogenated diamondlike carbon films prepared at a substrate temperature (ST) of 100, 300, and 500 °C by the laser ablation of graphite on a single-crystal silicon substrate have been characterized by scanning tunneling microscopy for the surface structure and Raman spectroscopy for the microstructure. Distorted pentagonal and hexagonal rings are observed on the surface of the film grown at 100 °C while only hexagonal rings are observable for the one grown at 500 °C. The rise in ST is found to increase the surface roughness. To assign the various coexisting carbonaceous species formed at different growth temperatures and to check their thermal stability, heat treatment was performed at up to 1300 °C in vacuum and 600 °C in air. The changes occurring on heat treatment in vacuum in these films around 600 °C have been correlated with the release of defects from the threefold network. Likewise, 950 °C temperature has been associated with the conversion of disordered tetrahedral bonding to a distorted trigonal one. The heat treatment in air shows that the microstructure induced due to lower ST is thermally more stable. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3934-3937 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The free carrier concentration at oval defects in silicon-doped GaAs grown by molecular beam epitaxy has been studied on the basis of longitudinal-optical (LO)-phonon plasmon coupled mode frequency through Raman spectroscopy. The carrier concentration at the oval defects was found to be lower as compared to the defect-free regions. The variations of surface depletion width with the concentration calculated from LO phonon intensities was also used to obtain the carrier concentration at the oval defects. Excellent agreement was found between the carrier concentrations obtained from these two methods. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1706-1708 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Micro-Raman spectroscopy and x-ray diffraction measurements have been used to identify the presence of hexagonal diamond polytypes in chemical vapor deposited diamond films. The presence of additional reflections, in addition to the normal cubic diamond reflections in the diffraction spectra and bands at 1306 and 1193 cm−1 in the Raman spectra, are attributed to the presence of diamond 6H polytype. The presence of the 1324 cm−1 band in addition to the main diamond peak in the expanded spectra is attributed to regions with hexagonal symmetry, thus supporting the presence of hexagonal diamond polytypes. The compressive strain in diamond layers on the Si substrate is believed to create regions of hexagonal symmetry and vice versa. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 82 (1985), S. 5624-5632 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The Raman spectra (30–3300 cm−1) of a single crystal and of polycrystalline forms of NH4SCN are presented in the temperature range 135 to −175 °C. The polarization behavior of the Raman bands reveals the antipolar arrangements of SCN− ions in the room temperature phase. Above 86.5 °C the spectra do not show polarization behavior due to the formation of polycrystalline domains. Other changes observed in the entire spectrum at this phase transition are attributed to reorientation of SCN− ions between two equivalent configurations. At the next phase transition around 112 °C the lattice modes of SCN− ions are affected. The characteristics are those of a second-order displacive phase transition. A new phase transition observed at −70 °C is characterized by the strengthening of the hydrogen-bond networks in the lattice.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 85 (1986), S. 5446-5456 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The microwave spectrum of cyclobutylcarboxylic acid fluoride, c-C4H7CFO, has been recorded from 18.0 to 40.0 GHz. The a-type R-branch transitions have been observed and assigned for the ground and two vibrationally excited states of the asymmetric torsional mode as well as for the first vibrationally excited state of the ring puckering fundamental. The rotational constants were determined from the frequency fit to a rigid rotor model for the ground vibrational state to be: A=5467.35±0.03, B=1884.76±0.01, and C=1558.64±0.01 MHz. These constants are shown to be consistent with an equatorial-gauche conformation (i.e., the CFO group is in the equatorial position relative to the ring and the C=O bond is eclipsing, or nearly so, one of the C–C bonds of the ring). From relative intensity measurements the frequency for the asymmetric torsion for this conformer is estimated to be 72±10 cm−1. From the Stark effect the dipole moment components were determined to be: ||μa|| =2.97±0.02, ||μb|| =0.84±0.01, ||μc|| =0.35±0.01, and ||μt|| =3.11±0.01 D. The central line of an additional conformer has been identified with a B+C value of 3482 MHz which is consistent with the expected value for the equatorial-trans conformer. The infrared (3500 to 30 cm−1) and Raman spectra (3200 to 30 cm−1) have also been recorded for the gaseous and solid states of cyclobutylcarboxylic acid fluoride.Additionally, the Raman spectrum of the liquid phase has been recorded and qualitative depolarization values have been obtained. From the relative intensities of the Raman lines of the gas at 918 cm−1 (equatorial-trans) and 926 cm−1 (equatorial-gauche) as a function of temperature, the enthalpy difference was found to be 352±100 cm−1 (1.01 kcal/mol) with the equatorial-gauche being more stable. A complete vibrational assignment is proposed based on infrared band contours, depolarization values, and group frequencies. These results are compared to similar quantities for some related molecules.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 1310-1319 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdSe thin films deposited chemically on glass substrates for 4, 8, and 16 h, and subsequently annealed at 400 °C for 1 h, have been studied by a combination of spectroscopic (photoluminescence and Raman scattering) and structure-determining (x-ray diffraction and atomic force microscopy) techniques. Due to a size distribution of constituent grains, photoluminescence spectra of the as-deposited films show weak but broad bands at ∼2.2 eV (strongly confined band) and ∼1.73 eV (weakly confined band). On annealing, intensity of the weakly confined band, at ∼1.7 eV increases as a result of an improvement in the crystalline quality of CdSe nanoclusters. A surface-optic Raman mode at ∼250 cm−1 in as-deposited samples has been observed for the first time. The x-ray diffraction studies of annealed samples show a diffraction peak at 2θ=13° from the (001) plane. The improvement in crystallinity of the films as observed by atomic force microscopy and photoluminescence techniques, the appearance of (001) reflection in the x-ray diffraction pattern, the disappearance of surface-optic Raman mode, and the enhancement of weakly confined band—all as a consequence of annealing—have been discussed and correlated with each other. A film deposition mechanism has been described, which explains the origin of the simultaneous existence of strong and weak quantum confinement effects; the significance this observation in the development of high efficiency photovoltaic solar cells has been emphasized. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Inorganic chemistry 33 (1994), S. 392-394 
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3014-3016 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report room temperature delamination of chemically vapor deposited diamond films on a Si substrate due to 1.5 MeV He+ ion bombardment. The delamination of films has been studied by scanning electron microscopy. The threshold fluence at which the delamination takes place has been determined in situ by monitoring the hydrogen signal with the help of elastic recoil detection analysis. Micro Raman measurements show the presence of residual stress (1.19 GPa) in the as-prepared films and its relaxation at the peripheri of the delaminated regions. It is proposed that enhancement of the residual stress during He+ ion bombardment leads to stress saturation conditions which result in the delamination of the brittle diamond films from the film/substrate interface. These findings lead to the possibility of creating ion-beam induced channels in diamond films for device isolation by suitable choice of film/substrate combination. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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