ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A compound-semiconductor device simulator, in which deep levels in the semi-insulating layers can be taken into account, has been developed. By using this simulator, the electrical properties for the semi-insulating InP buried heterostructure laser diodes were investigated. The leakage current, without passing through the active region, was found to be small when the trap density in the semi-insulating InP layers is more than 3×1015 cm−3 and less than 1×1016 cm−3. This simulator will be a useful tool in predicting the semi-insulating properties of electrical and optical semiconductor devices.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.99352
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