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Semi-insulating current blocking property simulations for buried heterostructure laser diodes (1988)

Asada, S. ; Sugou, S. ; Kasahara, K. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 52 (1988), S. 703-705

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: A compound-semiconductor device simulator, in which deep levels in the semi-insulating layers can be taken into account, has been developed. By using this simulator, the electrical properties for the semi-insulating InP buried heterostructure laser diodes were investigated. The leakage current, without passing through the active region, was found to be small when the trap density in the semi-insulating InP layers is more than 3×1015 cm−3 and less than 1×1016 cm−3. This simulator will be a useful tool in predicting the semi-insulating properties of electrical and optical semiconductor devices.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.99352

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