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  • 1
    Electronic Resource
    Electronic Resource
    Trap-assisted conduction in nitrided-oxide and re-oxidized nitrided-oxide n-channel metal-oxide-semiconductor field-effect transistors (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8353-8358 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The off-state leakage characteristics of n-channel metal-oxide-semiconductor field-effect transistors with pure oxide, low-partial pressure nitrided (LPN) oxide, re-oxidized LPN, and nitrogen-annealed LPN oxide as the gate insulator, were investigated over the temperature range 300–400 K. In the high-field region (above 7 MV/cm), the gate-induced drain leakage was found to be due to band-to-band tunneling for all samples. Low-field conduction was determined to be due to a gate current which was many orders of magnitude higher than the Fowler–Nordheim current observed in capacitors on the same wafers. A trap-assisted tunneling model was employed, using a trap energy of 0.7 eV determined from the activation data, in order to explain the low-field gate current. The most likely cause of this enhanced conduction is oxide degradation in the gate-to-drain overlap region created during the source/drain implant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354086
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  • 2
    Electronic Resource
    Electronic Resource
    A new method for extracting the trap energy in insulators (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3348-3351 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple procedure is reported for extracting the energy of trap levels from the I-V characteristics of insulators at room temperature. It is shown that by plotting ln(JE) vs 1/E it is possible to obtain the trap energy directly from the slope, and an estimate of the trap density from the intercept. Furthermore, it is demonstrated that our simplified, trap-assisted tunneling equation differs from the exact solution by only ∼1%–3% for "typical'' nitridation-induced trap energies (2–3 eV), and for fields above 4 MV/cm. At lower trap energies this error is shown to be manifested only in the extracted trap densities and hence the new model can still be used to obtain the trap depth. For nitrided-oxide capacitors it is shown that this nitridation-induced trap energy is ∼2.2 eV which is in good agreement with the work of others. For transistors fabricated on the same wafers evidence is found for a distribution of shallow (≤1 eV) traps which could be due to damage introduced during the source/drain implant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352934
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  • 3
    Electronic Resource
    Electronic Resource
    A study on interface and charge trapping properties of nitrided n-channel metal-oxide-semiconductor field-effect transistors by backsurface argon bombardment (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 1947-1950 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A low-energy (550 eV) argon-ion beam was used to directly bombard the backsurface of nitrided n-channel metal-oxide-semiconductor field-effect transistors (n-MOSFETs) after the completion of all conventional processing steps. The interface and oxide-charge trapping characteristics of the bombarded MOSFETs were investigated as compared to nonbombarded and reoxidized-nitrided n-MOSFETs. It was found that after bombardment, interface state density decreases and interface hardness against hot-carrier bombardment enhances, and oxide charge trapping properties were also improved. The improvements exhibit a turnaround behavior depending on bombardment conditions and could be attributed to stress compensation in the vicinity of the Si/SiO2 interface and an annealing effect. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366007
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of nitridation temperature on the electron trap characteristics of nitrided-oxide metal-oxide-semiconductor capacitors (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 740-742 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work the effects of nitridation temperature on trap parameters have been studied. Using a high-field technique, no significant change in capture cross section (σ) could be seen with all devices having σ∼10−15 cm2, indicating the traps are neutral. Trap energies, extracted using a novel technique based on a simple trap-assisted tunneling model, were found to be ∼2.7 eV for nitridation temperatures below 1100 °C, falling to ∼2.4 eV above this temperature. Trap densities, also extracted using the same method, followed a similar trend.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355243
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  • 5
    Electronic Resource
    Electronic Resource
    Tunneling-injection-induced turnaround behavior of threshold voltage in thermally nitrided oxide n-channel metal-oxide-semiconductor field-effect transistors (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6299-6303 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The threshold voltage (VT) degradation metal-oxide-semiconductor field-effect transistors (MOSFETs) with thermally nitrided oxide or pure oxide as gate dielectric was determined under Fowler–Nordheim (FN) stressing. A typical VT turnaround behavior was observed for both kinds of devices. The VT for nitrided oxide MOSFETs shifts more negatively than that for pure oxide MOSFETs during the initial period of FN stressing whereas the opposite is true for the positive shift after the critical time at turnaround point. The discovery that the shift of substrate current peak exhibits similar turnaround behavior reinforces the above results. In the meantime, the field-effect electron mobility and the maximum transconductance in the channel for nitrided oxide MOSFETs are only slightly degraded by stressing as compared to that for pure oxide MOSFETs. The VT turnaround behavior can be explained as follows: Net trapped charges in the oxide are initially positive (due to hole traps in the oxide) and result in the negative shift of VT. With increasing injection time, trapped electrons in the oxide as well as acceptortype interface states increase. This results in the positive shift in VT. It is revealed that VT degradation in MOSFETs is dominated by the generation of acceptortype interface states rather than electron trapping in the oxide after the critical time.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346872
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  • 6
    Electronic Resource
    Electronic Resource
    Simplified closed-form trap-assisted tunneling model applied to nitrided oxide dielectric capacitors (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5711-5715 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conduction has been studied in ultrathin nitrided oxide, re-oxidized nitrided oxide, and nitrogen-annealed nitrided oxide film capacitors in which the nitridation step was performed by a low-partial-pressure nitridation technique. Results indicate that, as well as some degree of barrier lowering due to the build-up of nitrogen at the injecting interface, a trap-assisted mechanism could be responsible for the enhanced conduction exhibited by the nitrided oxide devices. A simplified closed-form trap-assisted tunneling model is employed that produces a fit to the data with a trap depth of 2.1 eV. The difference between this trap model and a model requiring numerical integration was negligibly small (∼2%).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351923
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  • 7
    Electronic Resource
    Electronic Resource
    1/f noise in n-channel metal-oxide-semiconductor field-effect transistors under different hot-carrier stresses (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5203-5206 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Degradation mechanisms contributing to increased 1/f noise of n-channel metaloxide-semiconductor field-effect transistors (n-MOSFETs) after different hot-carrier stresses are investigated. It is demonstrated that for any hot-carrier stress, the stress-induced enhancement of 1/f noise is mainly attributed to increased carrier-number fluctuation arising from created oxide traps, while enhanced surface-mobility fluctuation associated with electron trapping at preexisting and generated fast interface states and near-interface oxide traps is also responsible under maximum substrate- and gate-current stresses. Besides thermal-oxide n-MOSFETs, nitrided-oxide devices are also used to further support the above analysis. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371501
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  • 8
    Electronic Resource
    Electronic Resource
    A study of various oxide/silicon interfaces by Ar+ backsurface bombardment (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 2253-2256 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A low-energy (550 eV) argon beam is used to bombard the backsurfaces of 6 kinds of metal–oxide–semiconductor capacitors, and the resulting effects on their interface characteristics are then investigated. The gate oxide of these capacitors includes thermal oxide, trichloroethyene (TCE) oxide, NH3-nitrided oxide, reoxidized-nitrided oxide, rapid-thermal-nitrided oxide, and N2O-nitrided oxide. Measurements show that for bombardment times up to 45 min the interface-state density of all the devices, in general, decreases with increasing bombardment time/dose, and the midgap energy at the silicon surface tends to rise. Moreover, the bombardment is more effective in reducing acceptor-type than donor-type interface states. On the other hand, the change of fixed-charge density is more complex. For TCE, N2O-nitrided and reoxidized-nitrided oxides, fixed-charge density decreases initially with increasing bombardment time, but then increases, while the trend is reversed for the other gate oxides. A model with stress compensation and weak bond breaking is suggested to explain the results. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369534
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  • 9
    Electronic Resource
    Electronic Resource
    Effects of nitridation and annealing on interface properties of thermally oxidized SiO2/SiC metal–oxide–semiconductor system (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3744-3746 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of N2O nitridation and subsequent annealing in different conditions on thermally oxidized n-type 6H–silicon carbide (SiC) metal–oxide–semiconductor (MOS) interface properties were investigated. Influence of high-field stress on the MOS system was also studied. The nitrided device annealed in dry or wet O2 is found to have lower interface-state density compared to the device annealed in N2 because the reoxidation can reduce nitridation-induced interface damage. Furthermore, significantly less shift of flatband voltage during high-field stress for all nitrided devices indicates much better oxide reliability by replacing strained Si–O bonds with stronger Si–N bonds during nitridation. This is further supported by the fact that annealing of the nitrided device in dry or wet oxygen slightly reduces the robustness of the oxide. In summary, the O2-annealing conditions have to be optimized to deliver a proper tradoff between interface quality and reliability. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126769
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  • 10
    Electronic Resource
    Electronic Resource
    Off-state leakage currents in n-channel metal-oxide-semiconductor field-effect transistors with 10-nm thermally nitrided and reoxidized nitrided oxides as the gate dielectric (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3006-3008 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of nitridation and reoxidation on the off-state leakage currents of n-channel metal-oxide-semiconductor-field-effect transistors have been investigated. It is found that nitridation greatly increases the gate leakage in the low-field range but ensuing reoxidation can effectively reduce it. Nitridation-induced oxide traps could be responsible for this leakage, along with traps introduced during the source/drain implant. A trap-assisted tunneling model has been proposed to explain this off-state gate leakage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105826
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