Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Plastic membrane electrode for the potentiometric determination of pethidine hydrochloride in pharmaceutical preparations (2000)
    Springer
    Fresenius' journal of analytical chemistry 368 (2000), S. 335-337 
    Details
    ISSN: 1432-1130
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract A novel poly(vinyl chloride) membrane electrode with dibutyl phthalate as plasticizer based on the pethidine-tetraphenylborate ion-association complex as ion-exchange site for the determination of pethidine hydrochloride in injections and tablets was developed. A linear response for 1 × 10–5 to 1 × 10–2 mol/L drug with a slope of 51.77 mV/decade was established. The optimum ¶pH range was 2–8. The lower detection limit was 2.18 × 10–6 mol/L. There were negligible interferences from a number of inorganic and organic cations and some common drug excipients. The electrode proposed had been successfully applied to determine pethidine hydrochloride in tablets and injections. The results correlated well with those obtained by the United States Pharmacopoeia standard procedure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002160000463
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    A novel HLA-DRB1*15 allelic sequence isolated from the Han population of Guangdong, China (2005)
    Oxford, UK : Blackwell Science Ltd
    International journal of immunogenetics 32 (2005), S. 0 
    Details
    ISSN: 1744-313X
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Medicine
    Notes: A novel DRB1*15 allele, DRB1*1516, has been identified in a Guangdong Han individual. Its sequence was confirmed by sequencing of polymerase chain reaction products and clones. This allele differed by one nucleotide from DRB1*150101 at position 220 (G→A), resulting in an amino acid substitution from Gly to Arg at codon 45.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1744-313X.2005.00514.x
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Tunneling-injection-induced turnaround behavior of threshold voltage in thermally nitrided oxide n-channel metal-oxide-semiconductor field-effect transistors (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6299-6303 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The threshold voltage (VT) degradation metal-oxide-semiconductor field-effect transistors (MOSFETs) with thermally nitrided oxide or pure oxide as gate dielectric was determined under Fowler–Nordheim (FN) stressing. A typical VT turnaround behavior was observed for both kinds of devices. The VT for nitrided oxide MOSFETs shifts more negatively than that for pure oxide MOSFETs during the initial period of FN stressing whereas the opposite is true for the positive shift after the critical time at turnaround point. The discovery that the shift of substrate current peak exhibits similar turnaround behavior reinforces the above results. In the meantime, the field-effect electron mobility and the maximum transconductance in the channel for nitrided oxide MOSFETs are only slightly degraded by stressing as compared to that for pure oxide MOSFETs. The VT turnaround behavior can be explained as follows: Net trapped charges in the oxide are initially positive (due to hole traps in the oxide) and result in the negative shift of VT. With increasing injection time, trapped electrons in the oxide as well as acceptortype interface states increase. This results in the positive shift in VT. It is revealed that VT degradation in MOSFETs is dominated by the generation of acceptortype interface states rather than electron trapping in the oxide after the critical time.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346872
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Density dependence of excess electronic ground-state energies in simple atomic fluids (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 2002-2021 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The ground-state energies of an excess electron E0 as a function of solvent density are computed using model electron–atom pseudopotentials in fluid helium, argon, and xenon. E0 is a lower bound to the experimentally measurable threshold to photoconductivity, V0. The nonuniqueness of the pseudopotential description of electron–molecule interactions is demonstrated. We find that when many-body polarization effects are included, our calculated E0 results are in close agreement with experimental V0 values indicating that the conduction-band energy lies close to the ground-state energy across a broad range of densities in these polarizable fluids. If the many-body nature of the polarization interaction is ignored the ground-state energies deviate significantly from the V0 results highlighting the importance of accurate treatment of many-body polarization interactions. It is shown that a mean-field theory of polarization gives substantial agreement with full many-body calculations. This allows us to introduce a mean-field, density-dependent pair potential which greatly simplifies such many-body calculations. In the more polarizable systems, it is found that the spatial extent of the ground-state wave function as a function of solvent density is correlated with the density dependence of both V0 and the electron mobility, and it becomes uniformly spread throughout our simulation cell as the electron mobility goes through its maximum value at intermediate solvent densities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.463138
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Magnetic properties and shape memory of Fe-doped Ni52Mn24Ga24 single crystals (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 634-636 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single crystals of a pseudoquaternary Heusler alloy, Ni52Mn16Fe8Ga24, have now been synthesized. The substitution of Fe for Mn strengthens the magnetic exchange interactions, increasing the Curie temperature to 381 K. The Fe also increases the Ni magnetic moment to 0.41 μB relative to that in the stoichiometric Heusler composition. The strain accompanying the martensitic transformation is 2.4% in zero field and can be enhanced to 4.2% by a field of 1.2 T. A field-induced strain of 1.15% has been induced along [001] in unstressed crystals with magnetic fields of 1.2 T applied at 291 K. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1447003
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Off-state leakage currents in n-channel metal-oxide-semiconductor field-effect transistors with 10-nm thermally nitrided and reoxidized nitrided oxides as the gate dielectric (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3006-3008 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of nitridation and reoxidation on the off-state leakage currents of n-channel metal-oxide-semiconductor-field-effect transistors have been investigated. It is found that nitridation greatly increases the gate leakage in the low-field range but ensuing reoxidation can effectively reduce it. Nitridation-induced oxide traps could be responsible for this leakage, along with traps introduced during the source/drain implant. A trap-assisted tunneling model has been proposed to explain this off-state gate leakage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105826
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Characterization of rapid thermally nitrided SiO2/Si interface by the conductance technique (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2217-2219 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Device quality SiO2 films with a thickness of 15 nm have been thermally nitrided in NH3 by a rapid thermal processing technique. The properties of the interface between these films and a Si substrate have been investigated by a conductance technique. The results show that the nitridation increases the density and time constant of interface states and enhances the fluctuation of surface potential, but changes the hole capture cross section only slightly. Specifically, nitridation introduces a peak of interface states at 0.25 eV below midgap and the energy dependency of hole capture cross section is suppressed. Using a patchwork model, the surface potential fluctuation can be well simulated and a surface charge nonuniformity with a long-wavelength distribution may exist. These are consistent with the fact that nitridation induces a high oxide charge density. Experimental data show that all these properties depend on nitridation time and temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104161
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    (2-Benzoylpyridine-N thiosemicarbazonato-N1,S)chloronickel(II) (1999)
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 55 (1999), S. 1804-1806 
    Details
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108270199008823
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Electrolessly plated cobalt alloy films for perpendicular magnetic recording media
    Amsterdam : Elsevier
    Journal of Magnetism and Magnetic Materials 115 (1992), S. 99-106 
    Details
    ISSN: 0304-8853
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0304-8853(92)90187-S
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Calmodulin gene family in potato: developmental and touch-induced expression of the mRNA encoding a novel isoform (1995)
    Springer
    Plant molecular biology 27 (1995), S. 693-703 
    Details
    ISSN: 1573-5028
    Keywords: β-glucuronidase ; calmodulin gene family ; calmodulin promoter ; differential expression ; touch stimulus ; transgenic potatoes
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract Eight genomic clones of potato calmodulin (PCM1 to 8) were isolated and characterized. Sequence comparisons of different genes revealed that the deduced amino acid sequence of PCM1 had several unique substitutions, especially in the fourth Ca2+-binding area. The expression patterns of different genes were studied by northern analysis using the 3′-untranslated regions as probes. The expression of PCM1, 5, and 8 was highest in the stolon tip and it decreased during tuber development. The expression of PCM6 did not vary much in the tissues tested, except in the leaves, where the expression was lower; whereas, the expression of PCM4 was very low in all the tissues. The expression of PCM2 and PCM3 was not detected in any of the tissues tested. Among these genes, only PCM1 showed increased expression following touch stimulation. To study the regulation of PCM1, transgenic potato plants carrying the PCM1 promoter fused to the β-glucuronidase (GUS) reporter gene were produced. GUS expression was found to be developmentally regulated and touch-responsive, indicating a positive correlation between the expression of PCM1 and GUS mRNAs. These results suggest that the 5′-flanking region of PCM1 controls developmental and touch-induced expression. X-Gluc staining patterns revealed that GUS localization is high in meristematic tissues such as the stem apex, stolon tip, and vascular regions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00020223
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...