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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 5412-5414 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the magnetic anisotropy in a series of Co-Au and Co-Cu superlattices prepared by molecular-beam epitaxy. Significant epitaxial strains give rise to a magnetoelastic contribution and a large crossover thickness (∼19 A(ring)) for perpendicular easy magnetization. The results are discussed in the context of a careful analysis of the interfacial strains and coherence determined by in situ time-resolved reflection high-energy electron diffraction techniques and x-ray scattering.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5723-5726 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Partially relaxed InxGa1−xAs films with high In content (x=0.35, 0.47), grown on GaAs(001) substrates, have been studied using grazing incidence x-ray diffraction techniques. By measuring the separation between the film peak and the substrate peak along different crystallographic directions, the in-plane lattice mismatch along these directions has been directly determined. We observed an asymmetric distribution of strain relief, the two [110] directions showing a stronger relaxation than the [100] direction. From the shift of peak positions as a function of the x-ray penetration depth, a strain relaxation gradient within the film has been determined, with the top layers more relaxed than those near the interface. In the thinnest films (5 nm thick) the presence of stacking faults was also found to relax the misfit strain. We used the grazing incidence x-ray diffraction technique for these measurements, with a novel approach that allowed the entire profile of the strain relaxation as a function of depth to be recorded in one measurement. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1339-1341 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal stability of GaAs(C)/InAs superlattices grown by metalorganic molecular beam epitaxy on InP substrates has been examined by Hall measurements, transmission electron microscopy, and high resolution x-ray diffraction. These structures provide an ordered counterpart to a random In0.53Ga0.47As alloy, in which high concentration carbon doping is generally difficult to achieve. In a 43 period (23 A(ring) GaAs/26 A(ring) InAs) superlattice in which the GaAs was C-doped and the InAs undoped an average hole concentration of 7×1019 cm−3 and hole mobility of 20 cm2 V−1 s−1 was achieved. Such structures are stable against rapid thermal annealing (10 s) up to 750 °C. An 850 °C/10 s anneal reduced the hole concentration to 1.5×1019 cm−3, accompanied by the onset of intermixing of the superlattice. The surface morphology of all but very thick (36 A(ring) GaAs/40 A(ring) InAs) period superlattice structures remained specular, even after 850 °C, 10 s annealing. These superlattices show properties suitable for use in a range of electronic and photonic devices, particularly InP-based lasers and heterojunction bipolar transistors.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2610-2612 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ surface x-ray scattering studies of the GaAs(001) surface were used to determine whether specific surface reconstructions occur during organometallic vapor-phase epitaxy. Prior to growth, we find that surfaces heated in the presence of As form a c(4×4) structure, while those heated in the absence of organometallics or in Ga form two similar fourfold reconstructions. We find no evidence for the presence of any surface reconstruction during the actual layer-by-layer growth process.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 0268-2605
    Keywords: laser-assisted chemical vapor deposition ; SnO2 ; SnBr4 ; copper(II) acetate ; gas sensors ; Chemistry ; Industrial Chemistry and Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: Laser-assisted chemical vapor deposition (LCVD) was utilized to produce SnO2 films from SnBr4 plus air, O2 or N2O. SnO2 films were successfully generated using either 222 or 308 nm laser pulses but there was evidence for film contamination when using less than 60 mJ/pulse laser energies at 222 nm. Films were characterized using ultraviolet absorption spectroscopy; the spectra of films with impurities resembled the spectrum of SnBr4. AFM images were obtained which indicated that this LCVD route produced small and fairly uniform SnO2 grains which were 50-100 nm in size. Multiphoton ionization spectroscopy was used to verify that the dissociation of a film dopant precursor, copper(II) acetate, produced gas-phase copper atoms under conditions similar to those used in film deposition experiments. The deposition of SnO2 from SnBr4 plus an oxidant was found to be more efficient than from di-n-butyl tin diacetate but films produced via this new LCVD route, including those doped with copper, were found to be much less sensitive in preliminary gas-sensing screening. © 1998 John Wiley & Sons, Ltd.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
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