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  • 1
    Electronic Resource
    Electronic Resource
    Numerical fitting of transient decays in the high defect density limit (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6636-6641 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A numerical fitting method based on the deep level transient spectroscopy (DLTS) technique is presented. This method deals with a situation where the standard rate window DLTS is no longer sufficient, i.e., the assumption that the defect density NT is much less than the donor doping density ND is no longer valid. Digitized capacitance transients are numerically fit to extract the electron emission rate, defect density, and energy level. The defect center under study is EL2 in n-type liquid-encapsulated Czochralski gallium arsenide. The fitting method gives an EL2 thermal activation energy of 0.76 eV, different from the 0.82 eV obtained by standard DLTS, which only examines the maximum emission conditions. The advantages, as well as the limitations, of this fitting method are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355105
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Analysis of defect energy levels in the limit of low emission rates (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2854-2858 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new deep level transient spectroscopy (DLTS) analysis method is presented. This method operates in the limit of large emission times which leads to a major simplification of standard DLTS calculations. This analysis can be applied as data is collected, and yields defect energy levels completely independent of the thermally activated cross section. This modification is especially useful in separating closely spaced energy levels not resolvable by standard analysis methods. Specifically, in the modified technique the shallower energy level is reliably determined. As an example, the new technique is applied to the energy level splitting of EL2 in n-type gallium arsenide induced by uniaxial stress. Our preliminary results for stress applied along 〈100(approximately-greater-than) indicates that C3v and Td symmetries are incompatible with this defect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353012
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Frequency-scanned deep-level transient spectroscopy (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 628-630 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The output signal in a deep-level transient spectroscopy experiment is a function of both the rate-window settings and sample temperature. Usually, the rate window is held fixed and the temperature scanned to produce the deep-level spectrum. We will demonstrate that a deep-level spectrum can also be obtained by fixing the temperature and scanning the rate window.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334753
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Hydrogen enhancement of silicon thermal donor formation (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2081-2083 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxygen-related thermal donor formation in Czochralski silicon is characterized by the capacitance-voltage and deep level transient spectroscopy techniques as a function of 450 °C anneal time following hydrogenation. Increases in the formation rate and number of thermal donor (TD) defects found after hydrogenation are reported. This study finds an increase in TD+/++ concentration in the near-surface region at short anneal times, but at longer times an elevated concentration was not observed. No acceleration through the sequence of thermal donor defects was detected. This fails to support the model of hydrogen lowering the barrier to oxygen diffusion and accelerating the TDn→TDn+1 transitions. This study does, however, support a model in which the hydrogen increases the available thermal donor core sites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109485
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  • 5
    Electronic Resource
    Electronic Resource
    Changes in the silicon thermal donor energy level as a function of anneal time (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2114-2116 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A deep level transient spectroscopy (DLTS) study of 450 °C annealed Czochralski silicon is presented. Particular attention is given to the relative concentrations of the two thermal donor energy levels Ec−0.15 eV and Ec−0.07 eV. Relative concentrations of the Ec−0.15 eV and Ec−0.07 eV energy levels indicate that there are fewer of the more shallow level. Also there is anomalous motion of the energy levels with anneal time indicating the gradual accretion of the thermal donor complexes. The suggested correlation with infrared absorption (IR) studies is that the nine double-donor defects found by IR form sequentially in the material and the DLTS energy level obtained merely reflects the most abundant of the nine distinct complexes. This indicates that the nine thermal donors are formed by the addition of some constituent to an earlier complex. As the thermal donor complex accretes the associated energy levels change, moving to shallower energies as anneal time increases. These findings tend to contradict the simple thermal donor models.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104977
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    RF-μSR study of muonium charge states and dynamics in Si (1994)
    Springer
    Hyperfine interactions 86 (1994), S. 673-679 
    Details
    ISSN: 1572-9540
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The radio frequencyμSR technique developed at TRIUMF was used to measure the temperature dependence of the diamagnetic muon, Mu, and Mu* amplitudes in silicon between 10 K and 500 K. Six samples doped with phosphorus (n-type) and boron (p-type) in the concentration range 1011 to 1015 cm−3 were studied. In pure Si a very good fit over the whole temperature range is obtained from a model that includes the ionization of Mu* and Mu to a bond centeredμ + followed at high temperature by charge exchange involving Mu.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02068962
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  • 7
    Electronic Resource
    Electronic Resource
    Development of a μLCR facility at LAMPF (1994)
    Springer
    Hyperfine interactions 87 (1994), S. 1111-1116 
    Details
    ISSN: 1572-9540
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract It has long been recognized thatμLCR could profitably be done with the high intensity surface beam at LAMPF [1]. A spectrometer has been built that is matched to the LAMPF beam characteristics. The polarization information is obtained from a downstream array of counters while side counters, containing no polarization signal, monitor theμ + beam. Degraders select higher energy e+, thereby reducing rates and required counter segmentation while maintaining information content. We apply a ramped longitudinal field in addition to the static one to average over instabilities in theμ + beam. This field scan allows direct interpretation of data and does not require a prior estimate of the resonance structure of a sample. Flux coils monitor the applied ramp field and eddy-current induced fields. High average rate (2×107 μ +/s). good stability, and the versatile field scan permitted useful data to be collected from Cu, Al(Cu), Al, Si(Al), and polycrystalline Si targets.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02068512
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    Paper (German National Licenses)
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