Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
57 (1990), S. 2609-2611
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report the growth of epitaxial τ-MnAl ferromagnetic films on GaAs substrates by molecular beam epitaxy (MBE). Reflection high-energy electron diffraction and x-ray diffraction show that the τ-phase films grow with the c axis of the tetragonal unit cell normal to the {100}GaAs substrate surface. In the bulk, τ-MnAl is a metastable ferromagnetic phase with uniaxial magnetocrystalline anisotropy. The large hysteresis observed in the Hall resistance versus applied magnetic field suggests that the easy magnetization direction is indeed parallel to the c axis in the MBE-grown films. The growth of these ferromagnetic films with perpendicular magnetization on compound semiconductor substrates creates the possibility of novel devices that combine magnetic memory and magneto-optic functions with semiconductor electronics and photonics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.103826
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