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  • 1
    Electronic Resource
    Electronic Resource
    Ion channeling investigation of the lattice location of Sn atoms in GaAs thin films grown by molecular beam epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1784-1786 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the lattice location of Sn atoms in Sn-doped GaAs thin films grown by molecular beam epitaxy using ion channeling techniques. Accumulation of ≈2×1014 atoms/cm2 of Sn on the GaAs surface was detected. These surface Sn atoms were determined to be randomly distributed within ≈20 A(ring) of the surface of the GaAs. Angular scans of the Ga Kα, As Kβ, and Sn L x rays across the 〈100〉, 〈110〉, and 〈111〉 axial channels indicated that the Sn atoms in the GaAs layer are mostly substitutional. No displacement of the Sn atoms larger than 0.14 A(ring) from the substitutional sites was detected.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103099
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Double-heterostructure GaAs/AlGaAs lasers on Si substrates with reduced threshold current and built-in index guiding by selective-area molecular beam epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1014-1016 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report successful fabrication of GaAs/Al0.26Ga0.74As double-heterostructure laser diodes grown on patterned Si substrates by molecular beam epitaxy. The patterned substrates consist of exposed Si stripes with widths ranging from 9 to 70 μm and surrounded by 900 A(ring) of SiN films on both sides. Oxide-defined contact stripe lasers with stripe widths ranging from 3 to 50 μm (corresponding to each of the SiN-defined stripe windows) were fabricated. Reduction of laser threshold current densities compared to similar lasers grown on nonpatterned Si substrates is observed, and is attributed to current confinement effect by the high-resistivity polycrystalline GaAs/AlGaAs films surrounding the active devices. From the measurements on the longitudinal mode spectrum and far-field patterns, lateral index guiding is also observed for the 10-μm-wide selective-area grown laser.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102602
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Tensile stress variations of chemically etched GaAs films grown on Si substrates (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2394-2396 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) at 77 K is used to study tensile stress variations in chemically etched stripes of a 3-μm-thick GaAs film grown on Si substrate. The etched patterns consist of 1-mm-long stripes with widths ranging from 100 to 4 μm and 4 μm by 4 μm squares. We observed monotonic shift of PL peaks towards shorter wavelength for decreasing stripe width. In particular, when the width of the stripe is less than 7 μm, tensile stress is essentially uniaxial as evident from the magnitude of shift in PL peaks. The polarization characteristics of the PL spectra of these uniaxially stressed stripes are investigated and found to agree well with theoretical predictions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100241
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  • 4
    Electronic Resource
    Electronic Resource
    Photoluminescence studies of selective-area molecular beam epitaxy of GaAs film on Si substrate (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 215-217 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs films have been grown on Si substrates patterned with SiN by molecular beam epitaxy. The pattern consists of bare Si stripe of width ranging from 10 to 100 μm surrounded by SiN on both sides and a reference area of bare Si. 77 K photoluminescence (PL) spectrum and intensity are measured on the single crystalline GaAs films grown on these stripes and the reference area. For 1.5- and 3-μm-thick films, PL intensity from the 10 μm stripe shows 140% and 75% increase over the reference area, respectively. This remarkable increase in the PL intensity is believed due to the reduction of dislocations inside the window area. The improvement in the optical quality makes selective-area molecular beam epitaxy a very attractive technique for the fabrication of optical devices on Si substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99523
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Polarization characteristics of AlGaAs/GaAs double-heterostructure lasers grown on Si substrates (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1955-1957 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The polarization of laser radiations from AlGaAs/GaAs double-heterostructure lasers grown on planar, trenched, and SiN-patterned Si substrates are examined. It was found that TM modes lase first in most of these lasers. Competition between TE and TM modes also occurs in some devices. A qualitative explanation is given on the basis of stress-induced changes in the optical gains between TE and TM modes. The difference in the polarization behavior among these lasers indicates that the residual tensile stress is influenced by substrate patterning.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104018
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Improvement in the crystalline quality of heteroepitaxial GaAs on Si films grown by modulated molecular beam epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2695-2697 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs films were grown on Si substrates by a two-step method in which a thin buffer layer was first deposited using a modulated molecular beam epitaxy (MBE) technique followed by a thick layer grown by conventional molecular beam epitaxy. The film quality was evaluated using 77 K photoluminescence (PL) and double-crystal x-ray rocking curves. It was found that GaAs films grown in this way have a superior crystalline quality compared to the films prepared by normal two-step MBE. To investigate the nucleation of this buffer layer, thin GaAs layers (150 A(ring)) were grown on Si substrates and examined by plan-view and cross-sectional transmission electron microscope. A thin, two-dimensional nucleation pattern was found in this sample, in clear contrast to the three-dimensional nucleation islands found in samples grown by conventional MBE. This showed conclusively that modulated beam molecular beam epitaxy resulted in a more uniform and two-dimensional nucleation during the initial stage of the growth as speculated earlier and is believed to be the reason for the improvement of the crystalline quality of the overgrown layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101018
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    1.5 μm InGaAsP/InP vertically coupled semiconductor optical pre-amplifier (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1141-1143 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Vertical coupling of light output from a stripe InGaAsP/InP laser amplifier to the bottom of the substrate for detection by means of a 45° mirror has been demonstrated. The composite-cavity amplifier structure is shown to have an inherent low facet reflectivity and unidirectional amplification property. With a fiber-to-detector gain of 15.4 dB and a nearly diffraction-limited output spot size, the device is suitable for compact integration with a photodetector as an optical pre-amplifier in a high bit-rate direct detection system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105537
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    Paper (German National Licenses)
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