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  • 1
    Electronic Resource
    Electronic Resource
    Characterization of electron-irradiated n-GaN (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3815-3817 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using deep level transient spectroscopy, we have investigated the electron trap defects introduced in n-GaN grown using the epitaxial lateral overgrowth technique during high energy electron irradiation from a 90Sr radionuclide source. The results indicate that the major electron-irradiation-induced defect labeled ER3 is not a single defect level but is made up of at least three defect levels (ER3b–ER3d). One of these defects, ER3d, has an activation energy and introduction rate of 0.22 eV and 0.43 cm−1, respectively. The total introduction rate of the three defects (ER3b–ER3d) is approximately 1.0 cm−1. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1379057
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical characterization of 1.8 MeV proton-bombarded ZnO (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3074-3076 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the electrical characterization of single-crystal ZnO and Au Schottky contacts formed thereon before and after bombarding them with 1.8 MeV protons. From capacitance–voltage measurements, we found that ZnO is remarkably resistant to high-energy proton bombardment and that each incident proton removes about two orders of magnitude less carriers than in GaN. Deep level transient spectroscopy indicates a similar effect: the two electron traps detected are introduced in extremely low rates. One possible interpretation of these results is that the primary radiation-induced defects in ZnO may be unstable at room temperature and anneal out without leaving harmful defects that are responsible for carrier compensation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1415050
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical characterization of vapor-phase-grown single-crystal ZnO (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1340-1342 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gold Schottky-barrier diodes (SBDs) were fabricated on vapor-phase-grown single-crystal ZnO. Deep-level transient spectroscopy, using these SBDs, revealed the presence of four electron traps, the major two having levels at 0.12 eV and 0.57 below the conduction band. Comparison with temperature-dependent Hall measurements suggests that the 0.12 eV level has a temperature activated capture cross section with a capture barrier of about 0.06 eV and that it may significantly contribute to the free-carrier density. Based on the concentrations of defects other than this shallow donor, we conclude that the quality of the vapor-phase-grown ZnO studied here supercedes that of other single-crystal ZnO reported up to now. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1452781
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    Paper (German National Licenses)
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