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  • 1
    Electronic Resource
    Electronic Resource
    Electrical characterization of defects introduced in p-Si1−xGex during electron-beam deposition of Sc Schottky barrier diodes (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1069-1071 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scandium (Sc) Schottky barrier diodes were fabricated by electron-beam (EB) deposition on epitaxially grown p-Si1−xGex strained films with x=0.0–0.2. The EB deposition was performed either with or without shielding the Si1−xGex samples. The barrier height and the defects introduced during EB deposition have been investigated as a function of Ge composition. Our results showed that the barrier height decreased as the band gap changed with increasing Ge content. The defect properties were studied with deep-level transient spectroscopy. The most prominent defect observed in p-Si was a hole trap H(0.53) at Eν+0.53 eV. Increasing the Ge content led to a decrease in the activation energy of this defect and this decrease followed the same trend as the band-gap variation, suggesting that the main defect detected in p-Si1−xGex is the same as that observed in p-Si. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120967
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  • 2
    Electronic Resource
    Electronic Resource
    Electronic properties of defects introduced in p-type Si1−xGex during ion etching (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 256-258 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the electronic properties of defects introduced in boron-doped, strained p-type Si1−xGex (x=0–0.15) during 0.75-keV argon Ar-ion etching, by deep level transient spectroscopy. These defects are compared to those introduced during e-beam deposition of metal contacts and after 5.4-MeV alpha-particle irradiation. Defect HAr1d, detected in p-Si, has similar electronic properties as He2 and Ha15 detected after electron and alpha-particle irradiation, respectively. The variation in activation energy of HAr1d with Ge fraction was studied, and it was found to follow the same change as the band gap of strained Si1−xGex. This defect has a concentration, which decreases sharply from the metal–semiconductor surface. It also has an activation energy, which depends on the Ge content and is pinned to the conduction band. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121772
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical characterization of neutron irradiation induced defects in undoped epitaxially grown n-GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4339-4342 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Undoped n-GaAs, grown by organometallic vapor phase epitaxy, was irradiated with neutrons from a clinical p(66)/Be(40) source for a range of fluences. Deep level transient spectroscopy (DLTS), employing Pd Schottky barrier diodes, indicated that four electron traps, En1, En2, En4, and En5, with energy levels at 0.04, 0.14, 0.36, and 0.66 eV, respectively, below the conduction band were created during neutron radiation. Their introduction rates varied from 1 cm−1 for the En1 to 11 cm−1 for the En5. It was found that the En1, En2, and En4 defects have DLTS "signatures'' similar to the E1, E2, and E3 point defects introduced during high energy electron irradiation, indicating their point defect nature. The En5 has a very large capture cross section, its emission rate exhibits a strong electric field dependence, and there are indications that it has a band-like energy distribution, that results in a broad DLTS peak. We speculate that this trap is related to the presence of extended defects in the neutron irradiated GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354399
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  • 4
    Electronic Resource
    Electronic Resource
    Hole defects in molecular beam epitaxially grown p-GaAs introduced by alpha irradiation (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1222-1224 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial aluminum Schottky barrier diodes on molecular beam epitaxially grown p-GaAs with a free carrier density of 2×1016 cm−3 were irradiated with alpha particles at room temperature using an americium-241 (Am-241) radio nuclide. For the first time, the radiation induced hole defects are characterized using conventional deep level transient spectroscopy (DLTS). The introduction rates and DLTS "signatures'' of three prominent radiation induced defects Hα1, Hα4, and Hα5, situated 0.08, 0.20, and 0.30 eV above the valence band, respectively, are calculated and compared to those of similar defects introduced during electron irradiation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356460
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  • 5
    Electronic Resource
    Electronic Resource
    Field-enhanced emission rate and electronic properties of a defect introduced in n-GaN by 5.4 MeV He-ion irradiation (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 809-811 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A deep level defect ER3, introduced in n-GaN by high energy (5.4 MeV) He ions, was characterized by deep level transient spectroscopy (DLTS). This defect, 0.196±0.004 eV below the conduction band, with an apparent capture cross-section of 3.5±1×10−15 cm2, is introduced uniformly in the region profiled by DLTS at a rate of 3270±200 cm−1. The emission rate of this defect depends on the electric field strength in the space-charge region. This emission rate is modeled according to the Poole–Frenkel distortion of a square well with a radius of 20±2 Å or alternatively, a Gaussian well with a characteristic width of 6.0±1 Å. Hence, we conclude that ER3 is a point defect which has a field dependence not explained by the classical Poole–Frenkel enhancement. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123375
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  • 6
    Electronic Resource
    Electronic Resource
    Proton bombardment-induced electron traps in epitaxially grown n-GaN (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 407-409 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using deep-level transient spectroscopy, we have studied the electrical properties of defects introduced in epitaxially grown n-GaN during 2-MeV proton bombardment. The main defects detected, ER2 and ER3, are introduced at rates of 400±150 and 600±100 cm−1, respectively, and have energy levels at 0.16±0.03 and 0.20±0.01 eV, respectively, below the conduction band. A less prominent defect, ER1, with an energy level at 0.13±0.01 eV below the conduction band, is introduced at a rate of 30±10 cm−1. The small capture cross section of ER3 [(8±4)×10−18 cm2] implies that it is in a neutral or negative state when above the Fermi level. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123043
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  • 7
    Electronic Resource
    Electronic Resource
    Characterization of electron-irradiated n-GaN (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3815-3817 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using deep level transient spectroscopy, we have investigated the electron trap defects introduced in n-GaN grown using the epitaxial lateral overgrowth technique during high energy electron irradiation from a 90Sr radionuclide source. The results indicate that the major electron-irradiation-induced defect labeled ER3 is not a single defect level but is made up of at least three defect levels (ER3b–ER3d). One of these defects, ER3d, has an activation energy and introduction rate of 0.22 eV and 0.43 cm−1, respectively. The total introduction rate of the three defects (ER3b–ER3d) is approximately 1.0 cm−1. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1379057
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  • 8
    Electronic Resource
    Electronic Resource
    Electrical characterization of two deep electron traps introduced in epitaxially grown n-GaN during He-ion irradiation (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3745-3747 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial n-GaN was irradiated with 5.4-MeV He ions. Capacitance–voltage (C–V) measurements showed that 5.4-MeV He ions remove free carriers at a rate of 6200±300 cm−1 in the first micron below the surface. Deep level transient spectroscopy (DLTS) revealed that, in addition to the radiation-induced defects previously detected by DLTS at 0.18–0.20 eV below the conduction band, He-ion irradiation introduced two additional prominent defects, ER4 (EC-0.78 eV) and ER5 (EC-0.95 eV) at rates of 1510±300 and 3030±500 cm−1, respectively. Capture cross-section measurements revealed that electron capture kinetics of ER5 is similar to that of a line defect. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122881
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  • 9
    Electronic Resource
    Electronic Resource
    Electrical characterization of 1.8 MeV proton-bombarded ZnO (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3074-3076 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the electrical characterization of single-crystal ZnO and Au Schottky contacts formed thereon before and after bombarding them with 1.8 MeV protons. From capacitance–voltage measurements, we found that ZnO is remarkably resistant to high-energy proton bombardment and that each incident proton removes about two orders of magnitude less carriers than in GaN. Deep level transient spectroscopy indicates a similar effect: the two electron traps detected are introduced in extremely low rates. One possible interpretation of these results is that the primary radiation-induced defects in ZnO may be unstable at room temperature and anneal out without leaving harmful defects that are responsible for carrier compensation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1415050
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  • 10
    Electronic Resource
    Electronic Resource
    Sputter deposition-induced electron traps in epitaxially grown n-GaN (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2173-2175 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used deep level transient spectroscopy to study the electrical properties of defects introduced in epitaxial n-GaN during sputter deposition of Au Schottky contacts. Four defects, located 0.22±0.02, 0.30±0.01, 0.40±0.01, and 0.45±0.10 eV below the conduction band, were characterized. The first of these defects has similar electronic properties as a radiation induced defect in GaN, while the second appears to be the same as a defect in the as-grown material. The latter two defects have not previously been observed in as-grown or processed epitaxial GaN. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123791
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