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Hole defects in molecular beam epitaxially grown p-GaAs introduced by alpha irradiation (1994)

Goodman, S. A. ; Auret, F. D. ; Meyer, W. E.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 75 (1994), S. 1222-1224

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Epitaxial aluminum Schottky barrier diodes on molecular beam epitaxially grown p-GaAs with a free carrier density of 2×1016 cm−3 were irradiated with alpha particles at room temperature using an americium-241 (Am-241) radio nuclide. For the first time, the radiation induced hole defects are characterized using conventional deep level transient spectroscopy (DLTS). The introduction rates and DLTS "signatures'' of three prominent radiation induced defects Hα1, Hα4, and Hα5, situated 0.08, 0.20, and 0.30 eV above the valence band, respectively, are calculated and compared to those of similar defects introduced during electron irradiation.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.356460

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