Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
77 (2000), S. 103-105
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Symmetric C–V and antisymmetric I–V characteristics are essential for a heterostructure barrier varactor (HBV) to generate odd harmonics in a frequency multiplier. Practically high multiplier efficiency is obtained when the shape of the C–V characteristic is sharp near zero bias and the conduction current is low. Here we present the design of an n-type Si/SiO2/Si-based HBV and its state-of-the-art device performance. Self-consistent solutions of the Schrödinger and Poisson equations show a drastic decrease of the conduction current due to the large electron effective mass and the SiO2 barrier height. The shape of the C–V curve can be easily tuned by modifying the thickness of the SiO2 layer. By the techniques compatible with the conventional Si technology, a Si/SiO2/Si varactor junction (having a SiO2 layer of 20 nm) has been processed and the device characteristics are very promising. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.126891
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