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  • 1
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxial growth of single domain ZnSe on Ge (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2026-2028 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality ZnSe epilayers have been successfully grown on a Ge (311) substrate by molecular beam epitaxy. Reflection high energy electron diffraction indicated antiphase domain free growth. The x-ray diffraction rocking curve demonstrated a full width at half maximum as narrow as 198 arcsec, which is the narrowest linewidth reported to date for a ZnSe/Ge heteroepitaxy. Our results indicate that ZnSe/Ge heterostructures are promising for optoelectronic device applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356303
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  • 2
    Electronic Resource
    Electronic Resource
    GaN grown by molecular beam epitaxy at high growth rates using ammonia as the nitrogen source (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1686-1688 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The 9.5 eV bond energy of the nitrogen molecule makes it very difficult to break it up into atoms and incorporate in III–V nitride compounds grown by molecular beam epitaxy (MBE). By comparison, it is relatively easy to dissociate ammonia due to the existence of a catalytic effect on the GaN surface when there is Ga present. Using ammonia as the nitrogen source, we have achieved high quality GaN by MBE at a growth rate as high as 1 μm/h. This is an order-of-magnitude faster than previously reported using electron-cyclotron resonance plasma-assisted growth. Most importantly, our results indicate that there is no intrinsic limit to the growth rate of GaN using ammonia, a situation similar to that of conventional III–V MBE using gas sources. The unintentional n-type doping as low as 2×1017 cm−3 at room temperature. In addition, room-temperature hole densities of 4×1017 cm−3 in Mg-doped GaN films have been achieved without postgrowth annealing. Low-temperature photoluminescence for both undoped and Mg-doped GaN are dominated by near band-edge emissions without deep-level related luminescence, indicative of high quality materials. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115057
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  • 3
    Electronic Resource
    Electronic Resource
    Surface polarity dependence of Mg doping in GaN grown by molecular-beam epitaxy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1740-1742 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of surface polarity on the growth of Mg-doped GaN thin films on c-plane sapphire substrates by molecular-beam epitaxy has been investigated. The doping behavior of Mg and resulting conductivity of the doped layers were found to strongly depend on the surface polarity of the growing GaN planes. The samples grown on the Ga-polar face (A face) exhibited a p-type conductivity with a free-hole concentration up to 5×1017 cm−3, while the samples grown on the N-polar face (B face) were highly resistive or semi-insulating. The incorporation of residual impurities (O, Si, and C) in the two different polar surfaces was studied by secondary ion mass spectrometry analysis and its effect on the Mg doping was discussed. Our results suggest that the A face (Ga face) is the favored surface polarity for achieving p-type conductivity during the growth of Mg-doped GaN. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126152
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  • 4
    Electronic Resource
    Electronic Resource
    High electron mobility AlGaN/GaN heterostructures grown on sapphire substrates by molecular-beam epitaxy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 742-744 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality AlGaN/GaN heterostructures have been grown by ammonia gas-source molecular-beam epitaxy on sapphire substrates. Incorporation of a low-temperature-grown AlN interlayer during the growth of a thick GaN buffer is shown to substantially increase the mobility of the piezoelectrically induced two-dimensional electron gas (2DEG) in unintentionally doped AlGaN/GaN heterostructures. For an optimized AlN interlayer thickness of 30 nm, electron mobilities as high as 1500 cm2/V s at room temperature, 10 310 cm2/V s at 77 K, and 12 000 cm2/V s at 0.3 K were obtained with sheet densities of 9×1012 cm−2 and 6×1012 cm−2 at room temperature and 77 K, respectively. The 2DEG was confirmed by strong and well-resolved Shubnikov–de Haas oscillations starting at 3.0 T. Photoluminescence measurements and atomic force microscopy revealed that the densities of native donors and grain boundaries were effectively reduced in the AlGaN/GaN heterostructures incorporating low-temperature-grown AlN interlayers. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125880
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  • 5
    Electronic Resource
    Electronic Resource
    Molecular cloning of the common carp (Cyprinus carpio) rhodopsin cDNA
    Amsterdam : Elsevier
    Comparative Biochemistry and Physiology -- Part B: Biochemistry and 109 (1994), S. 81-88 
    Details
    ISSN: 0305-0491
    Keywords: Carp ; PCR screening ; Photoreceptor ; Retinal cDNA library ; Rhodopsin ; Signal transduction ; Transmembrane domain ; Visual pigment
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0305-0491(94)90144-9
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  • 6
    Electronic Resource
    Electronic Resource
    Age-dependent changes in the distribution and concentration of human lens cholesterol and phospholipids
    Amsterdam : Elsevier
    Biochimica et Biophysica Acta (BBA)/Lipids and Lipid Metabolism 917 (1987), S. 112-120 
    Details
    ISSN: 0005-2760
    Keywords: (Human lens) ; Age ; Cholesterol distribution ; Phospholipid distribution
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Medicine , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0005-2760(87)90291-8
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  • 7
    Electronic Resource
    Electronic Resource
    A method of purification and certain properties of hog kidney mutarotase
    Amsterdam : Elsevier
    Archives of Biochemistry and Biophysics 110 (1965), S. 156-162 
    Details
    ISSN: 0003-9861
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0003-9861(65)90167-0
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  • 8
    Electronic Resource
    Electronic Resource
    Enhanced growth and Na+/H+ antiport activity response to serum in cultured fibroblasts of diabetic patients with nephropathy (1992)
    Springer
    Acta diabetologica 29 (1992), S. 178-181 
    Details
    ISSN: 1432-5233
    Keywords: Cell proliferation ; Diabetic nephropathy ; Intracellular pH ; Skin fibroblasts ; Sodium-hydrogen exchange
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract To explore whether elevated red blood cell sodium-lithium countertransport in type 1 (insulin-dependent) diabetic patients with nephropathy is related to the physiological Na+/H+ antiport activity, we measured the activity of this antiport in serially passaged cultured skin fibroblasts from insulin-dependent diabetic patients with and without nephropathy and from non-diabetic controls. Na+/H+ antiport activity (measured as the rate of amiloride-sensitive Na+ influx) was significantly elevated in patients with nephropathy compared with patients without nephropathy and normal controls (13.35±3.8 vs 8.54±2.0 vs 7.33±2.3 nmol Na+/mg protein per min;P〈0.006 andP〈0.001 respectively). This raised activity in patients with nephropathy was due to an increasedV max for extracellular Na+.K m values were similar in the three groups. Amiloride-sensitive Na+ influx was also higher in cells under baseline conditions and after serum stimulation from patients with nephropathy. Intracellular pH values were significantly higher, both during active proliferation and after 10 min of exposure to serum, in cells from patients with nephropathy compared with patients without nephropathy and normal controls. Serum-stimulated incorporation of [3H]thymidine into DNA was greater in patients with nephropathy than in the other two groups. These data in cultured fibroblasts suggest that intrinsic abnormalities in cell function, independently of the metabolic disturbances of diabetes, are a feature of diabetic patients who develop nephropathy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00573484
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  • 9
    Electronic Resource
    Electronic Resource
    An interferometric method for low-speed equilibrium sedimentation at low initial concentrations
    Amsterdam : Elsevier
    Analytical Biochemistry 43 (1971), S. 7-14 
    Details
    ISSN: 0003-2697
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0003-2697(71)90101-1
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