Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    External-cavity coherent operation of InGaAsP buried-heterostructure laser array (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2161-2163 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Coherent operation of a monolithic linear array of InGaAsP buried-heterostructure lasers operating at λ=1.3 μm has been acheived by means of a spatial filter in an external cavity. An array of mass-transported InP microlenses was used to collimate the beams of the individual laser elements and couple the laser array output to the external cavity. The coherent array output exhibited a narrow (3.2 mrad), three-lobe far-field pattern with ∼65% of the energy concentrated in the central peak.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102087
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Gallium phosphide microlenses by mass transport (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 97-99 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Arrays of high quality refractive microlenses have been formed in GaP substrates by mesa etching followed by a heat treatment in which the multistep mesas were smoothed due to surface energy minimization. A smooth lens surface and an accurately controlled lens profile have been obtained. Microlenses of 130 μm diameter and 200 μm focal length have been used to collimate the outputs of GaInAsP/InP and GaAs/GaAlAs diode lasers and have yielded a nearly diffraction-limited beam divergence of 0.68°.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102099
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Novel scalloped-mirror diffraction-coupled InGaAsP/InP buried-heterostructure laser arrays (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 687-689 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diffraction-coupled arrays of InGaAsP/InP buried-heterostructure lasers are reported. These arrays, fabricated by ion beam assisted etching and mass transport, have a novel scalloped mirror at the end of the coupling section that greatly increases the coupling between stripes and reduces the feedback into the same stripe. Far-field patterns show sharply defined lobes that are as narrow as 3°. An output section with cylindrical mirrors has been incorporated into the arrays to increase the power in the central far-field lobe. Threshold currents as low as 150 mA have been obtained for eight-stripe arrays.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100864
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    GaInAsP/InP buried-heterostructure surface-emitting diode laser with monolithic integrated bifocal microlens (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1219-1221 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new surface-emitting diode laser has been demonstrated, which consists of a buried-heterostructure waveguide gain region on one side of the substrate and a bifocal microlens of 210 μm diameter on the other side. The bifocal microlens is composed of a collimating lens in the center (70 μm diameter) and a spherical mirror in the surrounding region, for output collimation and optical feedback, respectively. Accurate alignment between the gain region and the microlens has been obtained by using the focused light spot produced by the latter. Initial device results show room-temperature pulsed threshold currents around 92 mA (with a low of 70 mA) and far-field patterns with a narrow central lobe of 1.25°.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102520
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    3.9-μm InAsSb/AlAsSb double-heterostructure diode lasers with high output power and improved temperature characteristics (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2251-2253 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Double-heterostructure diode lasers emitting at ∼3.9 μm have exhibited pulsed operation at temperatures up to 170 K and cw operation up to 105 K, with single-ended cw output power of 30 mW at 70 K. The laser structure, grown on GaSb substrates by molecular-beam epitaxy, has an InAsSb active layer and AlAsSb cladding layers. The lowest pulsed threshold current density is 36 A/cm2 obtained at 60 K. The characteristic temperature is 20 K over the entire temperature range. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112779
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Accurate fabrication of anamorphic microlenses and efficient collimation of tapered unstable-resonator diode lasers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3368-3370 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly precise f/0.9 refractive anamorphic microlenses have been fabricated in GaP substrates by mass-transport smoothing of etched multiple-mesa structures. Astigmatic outputs from tapered unstable-resonator lasers have been collimated to a nearly round beam of near diffraction-limited 0.43° divergence. Initial good efficiencies (as high as 35%) have been obtained in coupling the laser output into a single-mode fiber. These lenses are highly promising for realizing simple compact optical systems that exploit the high power capability of tapered lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111277
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Multistable mode locking of InGaAsP semiconductor lasers (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 895-897 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the pulsation behavior of InGaAsP semiconductor lasers with a proton-bombarded segment. These lasers emit picosecond (30–70 ps) pulses at gigahertz (0.6–3.0 GHz) rates. An antireflection-coated diode in an external cavity is passively mode locked and multistable; as many as four co-existing states are observed. Interlocking hysteresis loops are observed in the pulsation frequency, pulse width, and output power as functions of the bias current. A delayed feedback model explains qualitative features of the multistable mode locking. To our knowledge this is the first report of multistability of laser pulsation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98847
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Optically pumped GaN/Al0.1Ga0.9N double-heterostructure ultraviolet laser (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2148-2150 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular-beam epitaxy was used to grow a 100 nm Al0.1Ga0.9N/100 nm GaN/500 nm Al0.1Ga0.9N double heterostructure on a 10-μm-thick GaN buffer layer grown with hydride vapor phase epitaxy on (0001) sapphire. Lasing from the 100 nm GaN active layer has been obtained at ∼359 nm at liquid-nitrogen temperature (77 K) and at ∼365 nm at room temperature (295 K), using transverse optical pumping at 337.1 nm with a 600 ps transversely excited atmospheric pressure pulsed nitrogen laser. Threshold pump fluences were measured to be 0.3 and 0.5 mJ/cm2 at 77 and 295 K, respectively, for a laser with 65 μm cavity length. In a laser of 23 μm cavity length, longitudinal cavity modes were observed with 0.56 nm spacing, corresponding to a group refractive index of 5.0 at the lasing wavelength. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361044
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Surface-energy-induced mass-transport phenomenon in annealing of etched compound semiconductor structures: Theoretical modeling and experimental confirmation (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2434-2440 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comprehensive model of the mass-transport phenomenon at the surface of compound semiconductors has been developed and experimentally confirmed. In the model, the effect of surface curvature on thermal decomposition and the resulting diffusion and regrowth has been formulated, and a differential equation has been derived that describes the temporal evolution of any (spatially) slowly varying surface profile during mass transport. The model predicts an exponential decay of sinusoidal profiles with a fourth power of spatial wavelength dependence, and a grading of single mesa steps with a fourth root of time dependence. Good agreement with the model has been obtained in a systematic experimental study employing etched structures in InP. This study yields the low value of 1.5 eV for the activation energy of the mass-transport process in InP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345513
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Semiconductor wafer bonding via liquid capillarity (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 651-653 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Liquid surface tension has been used to pull different semiconductor wafers to very close contact and strong bonding. Bonded wafers, such as GaAs/GaP, were heat treated without pressure application to achieve wafer fusion. The bonding process has been analyzed, and criteria for surface tension, wafer flatness, and elasticity have been derived. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.127074
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...