Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
65 (1994), S. 2251-2253
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Double-heterostructure diode lasers emitting at ∼3.9 μm have exhibited pulsed operation at temperatures up to 170 K and cw operation up to 105 K, with single-ended cw output power of 30 mW at 70 K. The laser structure, grown on GaSb substrates by molecular-beam epitaxy, has an InAsSb active layer and AlAsSb cladding layers. The lowest pulsed threshold current density is 36 A/cm2 obtained at 60 K. The characteristic temperature is 20 K over the entire temperature range. © 1994 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.112779
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