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  • 1
    Electronic Resource
    Electronic Resource
    Negative differential resistance in AlGaSb/InAs single-barrier heterostructures at room temperature (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1899-1901 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed for the first time negative differential resistance at room temperature in a single-barrier tunneling heterostructure. A typical InAs/AlGaSb/InAs structure exhibits a current peak of 2.1×103 A cm−2 at 0.28 V and a peak to valley ratio of 1.6:1. We attribute the observation of room-temperature negative differential resistance to the favorable band alignment in the AlGaSb/InAs material system, which appears promising for device applications of single-barrier tunneling.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101235
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  • 2
    Electronic Resource
    Electronic Resource
    Interband tunneling in polytype GaSb/AlSb/InAs heterostructures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2023-2025 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polytype heterostructures of GaSb/AlSb/InAs show interband tunneling due to the 0.1 eV overlap of the InAs conduction band and the GaSb valence band. This broken-gap configuration results in a novel mechanism for negative differential resistance that has potential applications in high-speed devices. We have demonstrated for the first time interband tunneling in single-barrier and double-barrier polytype heterostructures. Single-barrier structures show negative differential resistance due to the change in interband tunneling with applied bias. A peak-to-valley ratio of 2.7:1 at 77 K was observed in this case. Double-barrier structures using an InAs quantum well exhibit resonant interband tunneling with a peak-to-valley current ratio of more than 60:1 at 77 K. This structure is promising for applications to three-terminal devices because of the very wide quantum well that can be achieved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102151
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Resonant tunneling through X-valley states in GaAs/AlAs/GaAs single-barrier heterostructures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1555-1557 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Clear negative differential resistance has been observed in a GaAs/AlAs/GaAs single-barrier heterostructure due to the presence of a quasi-bound state associated with the X-point profile. This surprising result is due to the fact that although the Γ-point profile of this heterostructure is a simple single tunneling barrier, the X-point profile actually constitutes a quantum well some 0.3 eV deep lying about 0.2 eV above the Γ point of GaAs. The experimental evidence is a sharp cutoff in conductance at about 0.36 V bias, characteristic of tunneling via a confined state.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102242
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  • 4
    Electronic Resource
    Electronic Resource
    Inelastic tunneling in (111) oriented AlAs/GaAs/AlAs double-barrier heterostructures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2133-2135 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlAs/GaAs/AlAs double-barrier heterostructures grown along the (111) crystal axis show a factor of two improvement in the peak-to-valley ratio compared to samples grown in the (100) orientation. A structure consisting of 2.8 nm barriers and an 8 nm well shows a peak-to-valley ratio much better than any published results on (100) oriented structures with similar well and barrier layers. This result is interpreted in terms of the increased effective mass for carriers tunneling inelastically via the AlAs X-point barrier. An increased mass leads to a reduction in the barrier transmission probability and, therefore, a decrease in the leakage current due to inelastic tunneling.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101149
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  • 5
    Electronic Resource
    Electronic Resource
    Resonant interband coupling in single-barrier heterostructures of InAs/GaSb/InAs and GaSb/InAs/GaSb (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2854-2857 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new mechanism for negative differential resistance due to electron/light hole coupling has been observed using broken gap heterostructures of InAs/GaSb/InAs and GaSb/InAs/GaSb. The best peak-to-valley ratio is about 2:1 (3.7:1 at 77 K) for a GaSb layer width of 10 nm. The peak current density of 4.2 kA cm−2 and the peak voltage of 300 mV are consistent with the interpretation of these experiments as interband coupling between the InAs conduction band and the GaSb valence (light hole) band.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346417
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  • 6
    Electronic Resource
    Electronic Resource
    Resonant tunneling in AlSb/InAs/AlSb double-barrier heterostructures (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2320-2322 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first observations of resonant tunneling in the AlSb/InAs material system, with a maximum peak-to-valley current ratio of 1.8:1 at room temperature and 9:1 at 77 K. The large AlSb/InAs barrier height of 1.8 eV for electrons and high-mobility InAs will be advantageous in device applications. In particular, the small electron effective mass in InAs makes it possible to demonstrate quantum effects in a 24 nm well, the longest coherence distance reported for double-barrier tunneling structures. We estimate that an AlSb/InAs resonant tunneling transistor can significantly outperform similar devices based on AlGaAs/GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100266
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  • 7
    Electronic Resource
    Electronic Resource
    Resonant interband tunneling through a 110 nm InAs quantum well (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 551-553 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanism of resonant interband tunneling in polytype heterostructures of GaSb/AlSb/InAs gives excellent peak-to-valley current ratios due to the band-gap blocking of the nonresonant current components. Using InAs as the base in a double-barrier polytype heterostructure, it is possible to demonstrate resonant tunneling at room temperature through a quantum well as wide as 110 nm. At this width, which is about 20 times larger than that typically used in resonant tunneling diodes in the GaAs/AlGaAs system, the peak-to-valley ratio is 44:1 (77 K). Significant negative differential resistance is observed even for 240 nm wells. The projected device response time for a resonant tunneling transistor with a wide InAs quantum base is more than five times faster than for a GaAs device, due to the reduced base resistance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102742
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  • 8
    Electronic Resource
    Electronic Resource
    Resonant interband tunneling in InAs/GaSb/AlSb/InAs and GaSb/InAs/AlSb/GaSb heterostructures (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1554-1556 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tunneling in InAs/GaSb/AlSb/InAs and GaSb/InAs/AlSb/GaSb structures has been observed for the first time and shown to offer large peak-to-valley ratios at higher peak current densities than previous double-barrier and single-barrier polytype interband tunneling results. Room-temperature peak-to-valley ratios as high as 20:1 were observed at peak current densities of 28 kA/cm2. The highest peak-to-valley ratio observed at 80 K was 80:1 at 1.2 kA/cm2. The large peak-to-valley ratios are attributed to resonant interband tunneling with a confined state and band-gap blocking of nonresonant currents. The operation of these devices is similar to asymmetric double-barrier structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103351
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  • 9
    Electronic Resource
    Electronic Resource
    Interband tunneling in single-barrier InAs/AlSb/GaSb heterostructures (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 952-954 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Negative differential resistance due to interband tunneling has been observed at room temperatures for the first time in polytype heterostructures of InAs/AlSb/GaSb. The peak-to-valley ratio is about 1.7:1 (5.5:1 at 77 K) for an AlSb barrier width of 2.5 nm. The peak current density is studied as a function of barrier width and compared to calculations based on the two-band model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102634
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  • 10
    Electronic Resource
    Electronic Resource
    Heterojunction field-effect transistors based on AlGaSb/InAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 789-791 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated the first InAs-channel field-effect transistor, which shows a transconductance of 180 mS/mm at 1 V drain-source bias (77 K). An improved buffer layer could significantly improve the device performance. In addition, we propose a new broken-gap heterojunction field-effect transistor based on these materials that could provide an order of magnitude higher transconductance compared to existing device configurations based on AlGaAs/GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101761
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