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  • 1
    Electronic Resource
    Electronic Resource
    Visible luminescence from branched silicon polymers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3362-3366 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Luminescence spectra and their variation with temperature have been investigated for solid films of poly(methylphenylsilane) and its branched analogs. Introduction of branching points to the polymers enhances the broad luminescence band in the visible region while suppressing the sharp UV luminescence band due to the resonant recombination of the exciton. The intensity of the visible luminescence is observed to keep on increasing with decreasing temperature in contrast with the nearly temperature-independent intensity of the resonant luminescence. The behavior is interpreted in terms of phonon-assisted tunneling between luminescence centers and nonradiative ones. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359962
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  • 2
    Electronic Resource
    Electronic Resource
    Development of lip treatment on the basis of desquamation mechanism (2004)
    Oxford, UK : Blackwell Science Ltd
    International journal of cosmetic science 26 (2004), S. 0 
    Details
    ISSN: 1468-2494
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Lip chapping is a serious cosmetics problem, though remedies other than moisturization have not been proposed. We investigated changes in the surface configurations of lip corneocytes and activities of desquamation-regulating proteinases associated with lip chapping. Using scanning electron microscopy, villus-like projections were observed on the inner surfaces of most corneocytes from normal lips, whereas those with flatter surface were predominantly found in chapped lips. Furthermore, cell surface area increased with the severity of lip chapping. Cathepsin D-like and chymo-trypsin-like proteinase, which are also present in skin as desquamation-regulating proteinases, were detected in lip corneocytes, though only cathepsin D activity was found to decrease in severely chapped lips. Hydration was also lower in areas of lip chapping. Sequential topical application of apricot extract essence increased cathepsin D activity and improved chapping severity. Our results suggest that lip chapping can be characterized as similar to senile xerosis rather than dry skin such as winter xerosis, as it shows a delayed transition of corneocytes through the stratum corneum, and the reduced cathepsin D activity may be one of the mechanisms that is further decreased by low hydration. We propose that an enhancement of both cathepsin D activity and lip moisture may be effective to improve lip chapping.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1467-2494.2004.00217_01.x
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  • 3
    Electronic Resource
    Electronic Resource
    Fulminant hepatic failure associated with aplastic anaemia after treatment with danazol. Case report (1986)
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 93 (1986), S. 0 
    Details
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-0528.1986.tb08029.x
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  • 4
    Electronic Resource
    Electronic Resource
    As-grown Y-Ba-Cu-O thin films by reactive coevaporation with oxygen plasma cooling (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3907-3909 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a new fabrication process of as-grown Y-Ba-Cu-O thin films using a reactive coevaporation method specially with the rf-plasma cooling in the low oxygen pressure of 0.4 mTorr. By this O2 plasma cooling process, the transition temperature Tc is improved from 40 to 81 K for the film with a thickness of 1000 A(ring). The x-ray diffraction analysis shows that the activated oxygen species generated by the rf plasma make Y-Ba-Cu-O films oxidize sufficiently even in the low pressure of oxygen. In addition, we have studied the thickness dependence of Tc for as-grown films with various thicknesses of 60–2000 A(ring).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344033
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  • 5
    Electronic Resource
    Electronic Resource
    Iron nitride thin films prepared by facing targets sputtering (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 3230-3232 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The iron nitride thin films have been deposited using a facing targets sputtering (FTS) system and a conventional dc diode magnetron sputtering system, and their crystallographic characteristics and magnetic properties have been investigated. The total gas pressure (PN2+PAr) was set at 2 mTorr. The films deposited by the FTS system without heating the substrate at PN2 below 0.3 mTorr possessed α-Fe-like structure with an increased lattice constant. At PN2 of around 0.5 mTorr, a two-phase mixture of α-Fe and Fe2–3N was formed in the films prepared in the FTS system, while ζ-Fe2N phase was formed in the films prepared by dc magnetron sputtering. The films prepared by FTS at PN2 of 0.1 mTorr possessed α-Fe and γ'-Fe4N structures when a substrate temperature (Ts) was in the range from 80 to 300 °C. The films deposited at Ts of about 150 °C possessed a saturation magnetization (Ms) of about 1700 emu/cm3, which is larger than that of pure iron films and coercivity (Hc) of about 1.5 Oe.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340851
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  • 6
    Electronic Resource
    Electronic Resource
    NMR spin-echo studies in sputtered Heusler alloy films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4119-4120 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have carried out at 4-K spin-echo studies (of 55Mn, 63Cu) on sputtered Heusler alloy (Cu2MnAl) films with substrate temperature Ts in the range of 50–300 °C in order to obtain microscopic information on the magnetic structure. For Ts =60 °C a very broad spectrum is obtained, revealing incomplete (disordered) formation of Cu2MnAl. For Ts =158, 167, 170, and 210 °C, well-defined spectra are observed with Mn at 227 MHz and Cu at 241 and 259 MHz, respectively. Signal intensity studies reveal a maximum for Ts =167 °C in general agreement with the magnetization results of Morisako, Matsumoto, and Naoe. The signal frequencies are also in agreement with those obtained for the bulk alloy. For Ts =300 °C, the spectrum is broadened but the signal frequencies of Mn and Cu remain practically the same. This spectrum is also quantitatively different from that observed for the film with Ts=60 °C, where a low-frequency tail is observed. The effect of post-annealing the films is also presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340514
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  • 7
    Electronic Resource
    Electronic Resource
    Magnetic properties of sputtered strontium ferrite films prepared from sintered target with Fe/Sr composition ratio of 8–14 (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4732-4734 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hexagonal strontium-ferrite (SrM) thin films were deposited by sputtering with the target composition ratio N (Fe/Sr) in the range of 8–14. The discrepancy of the composition ratio between the films and the target was found and the deposited films were in Fe-rich. In the x-ray diffraction diagram, the observed diffraction lines varied with the composition of the target and preferential c-axis orientation can be observed in the film prepared with the target, where the composition N is 10. The grain shape as well as size was found to be independent of N. The magnetic easy axis was normal to the plane. The maximum saturation magnetization and coercivity in the perpendicular direction were about 300 emu/cc and 3.5 kOe, respectively, when the film was prepared with the target with N of 8. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370463
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  • 8
    Electronic Resource
    Electronic Resource
    Synthesis of ferromagnetic τ phase of Mn-Al films by sputtering (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4281-4283 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mn-Al films have been prepared by dc magnetron sputtering and their crystallographic characteristics, magnetic properties, electrical resistivity, and internal stress have been investigated. The films deposited when substrate temperature Ts was below 100 °C and above 170 °C exhibit a high-temperature ε phase and β-Mn–like structure, respectively. Films of a ferromagnetic τ phase were synthesized with Mn content in the range of 58–62 at. % and Ts of about 150 °C. Existence of CuAu-type superstructure in the τ phase was confirmed by a change of electrical resistivity ρ of deposited films. The films deposited at a Ts of about 150 °C exhibit minimum value of 180 μΩ cm. Lattice constant a and c of the tetragonal τ-phase crystallites in the films were in the range of 3.582–3.592 A(ring) and 3.941–3.968 A(ring), respectively, while those of the bulk alloy were 3.580 and 3.940 A(ring), respectively. The maximum value of saturation magnetization of the films was 120 emu/cc, being as small as about one fourth of that of bulk alloy. This may be caused by elongation of lattice constants and coexistence of nonmagnetic ε phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338445
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  • 9
    Electronic Resource
    Electronic Resource
    Stable supermode operation in phase-locked laser diode arrays with three index waveguides (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2783-2785 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A phase-locked laser diode array with three index waveguides is described. The array has a novel structure which prevents channels from being etched back. As the result, the waveguide elements in the array are very uniform. A stable 180° phase mode oscillation is obtained up to 50-mW output power in the single longitudinal mode and three supermodes are observed simultaneously above 50-mW output power. The near-field patterns and the far-field patterns of these supermodes are in good agreement with the theoretical results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335872
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  • 10
    Electronic Resource
    Electronic Resource
    Dependence of window effects on Al content of a window layer in high-power AlGaAs window structure lasers with window grown on facets (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 809-812 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In high-power AlGaAs window structure lasers with a window grown on facets (WGF) structure, dependence of window effects on Al content of the window layer is examined. When the Al content of the window layer is more than that of the cladding layer, the window effects are found. But, in other cases, the window effects do not occur. A calculation of a carrier leakage from the active layer to the window layer is performed. From the result, we deduce that the reduction of the window effects is caused by the carrier leakage. In the WGF laser with the confirmed window effects, a maximum output power of 350 mW is achieved and highly reliable operation under 100 mW at 50 °C beyond 10000 h is attained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354870
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