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  • 1
    Electronic Resource
    Electronic Resource
    Crystal Chemistry of Ln'Ln''Ba2Cu2Ti2O11 (Ln = Lanthanide, Y) Materials (1995)
    s.l. : American Chemical Society
    Chemistry of materials 7 (1995), S. 1355-1360 
    Details
    ISSN: 1520-5002
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/cm00055a013
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  • 2
    Electronic Resource
    Electronic Resource
    Subsolidus Phase Relations and Transparent Conductors in the Cadmium-Indium-Tin Oxide System (2002)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 85 (2002), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Subsolidus phase relations have been determined in the CdO–InO1.5–SnO2 system at 1175°C. A cubic-bixbyite solution In2−2x(Cd,Sn)2xO3 (0 〈 x 〈 0.34), a cubic spinel solution (1−x)CdIn2O4–xCd2SnO4 (0 〈 x 〈 0.75), and an orthorhombic-perovskite solution Cd1−xSn1−xIn2xO3 (0 〈 x 〈 0.045) having the GdFeO3 structure have been discovered. The CdO phase field exists over a small range of InO1.5 (〈3%) and SnO2 (〈1%). Orthorhombic Cd2SnO4 (Sr2PbO4 structure) and rutile SnO2 appear to be point compounds with negligible solubility. The vertical section between spinel CdIn2O4 and orthorhombic Cd2SnO4 was determined between 900° and 1175°C. The spinel phase field (1−x)CdIn2O4–xCd2SnO4 was found to extend between x= 0 and x= 0.75 at 1175°C or x= 0.78 at 900°C. All of the phases in this system appear to allow small excess quantities of the donors In and/or Sn (vs cation stoichiometry) which may be the source of the electrons that give these oxides their n-type character. The electrical and optical properties of bulk and thin-film specimens in this system are compared and contrasted with each other and the relative merits of each are assessed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2002.tb00458.x
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  • 3
    Electronic Resource
    Electronic Resource
    Defects and Charge Transport near the Hematite (0001) Surface: An Atomistic Study of Oxygen Vacancies (2002)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 85 (2002), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Atomistic calculations were performed on a slab model of the (0001) surface of hematite as well as the bulk structure. In particular, the energetics of oxygen vacancies near the surface was studied. Atomistic modeling was used to establish the defect energies in the bulk versus distance from the surface. Transition state calculations were performed to compute barriers for several pathways of migration of oxygen vacancies in the bulk and at varying depths relative to the surface. We find energy barriers of several transitions considerably lowered closer to the surface. Considerations of literature data for electrical conductivity and Seebeck coefficient on bulk versus thin-film hematite suggest high populations of point defects near surfaces, in agreement with our predictions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2002.tb00068.x
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  • 4
    Electronic Resource
    Electronic Resource
    Neutron diffraction study on the defect structure of indium–tin–oxide (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2550-2555 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The defect structure of undoped and Sn-doped In2O3 (ITO) materials was studied by preparing powders under different processing environments and performing neutron powder diffraction. The effect of tin doping and oxygen partial pressure was determined. Structural information was obtained by analyzing neutron powder diffraction data using the Rietveld method. The results include positions of the atoms, their thermal displacements, the fractional occupancy of the interstitial oxygen site, and the fractional occupancies of Sn on each of the two nonequivalent cation sites. The tin cations show a strong preference for the b site versus the d site. The measured electrical properties are correlated with the interstitial oxygen populations, which agree with the proposed models for reducible (2SnIn•Oi″)x and nonreducible (2SnIn•3OOOi″)x defect clusters. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1341209
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  • 5
    Electronic Resource
    Electronic Resource
    Single grain boundary characterization of Nb-doped SrTiO3 bicrystals using ac four-point impedance spectroscopy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2621-2623 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AC four-point impedance spectroscopy has been applied to Nb-doped SrTiO3 bicrystals. Due to the simplified geometry and highly conductive bulk of the bicrystal, the reference impedance of the electrode was significantly reduced, validating the applicability of ac four-point impedance spectroscopy for electroceramics. DC current–voltage characteristics without any interference due to electrodes confirmed these ac measurements. Using ac four-point impedance spectroscopy, grain boundary contributions are isolated and the corresponding grain boundary thickness and resistivity are estimated. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126428
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  • 6
    Electronic Resource
    Electronic Resource
    Electrical and Optical Properties of Transparent Conducting Homologous Compounds in the Indium–Gallium–Zinc Oxide System (1999)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 82 (1999), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The homologous compounds In1−xGa1+xO3(ZnO)k (where k= 1, 2, or 3) were prepared at a temperature of 1400°C. The solubility limits (as determined via X-ray diffractometry) were 0.47 〈 [In]/([In] + [Ga]) 〈 0.67 for the k= 1 member, 0.35 〈 [In]/([In]+[Ga]) 〈 0.77 for the k= 2 member, and 0.29 〈 [In]/([In]+[Ga]) 〈 1.00 for the k= 3 member. Four-point-conductivity and diffuse-reflectance measurements were performed on as-fired and reduced samples. The band gap that was determined from diffuse reflectance increased as the Ga3+ content increased and k decreased. The conductivity increased as k decreased and the In3+ content increased. A maximum conductivity of 250 S/cm was obtained for k= 3 and [In]/([In]+[Ga]) = 1 after reduction. The minimum absorption edge of 325 nm was obtained for k= 2 and [In]/([In]+[Ga]) = 0.35 prior to reduction. The potential for metastable phases in the In-Ga-Zn-O system with enhanced transparent-conducting properties has been discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.1999.tb02145.x
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  • 7
    Electronic Resource
    Electronic Resource
    Phase Relationships and Physical Properties of Homologous Compounds in the Zinc Oxide-Indium Oxide System (1998)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 81 (1998), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Equilibrium phase relationships in the ZnO-In2O3 system were determined between 1100° and 1400°C using solid-state reaction techniques and X-ray diffractometry. In addition to ZnO and In2O3, nine homologous compounds, ZnkIn2Ok+3 (where k= 3, 4, 5, 6, 7, 9, 11, 13, and 15), were observed. Electrical conductivity and diffuse reflectance of the k= 3, 4, 5, 7 and 11 members were measured before and after annealing at 400°C for 1 h under forming gas (4%2-96% N2). Room-temperature conductivity increased as k decreased, because of increased carrier concentration as well as increased mobility. In general, transparency in the wavelength range of 450-900 nm increased as k increased. Reduction in forming gas resulted in increased conductivity and reduced transparency for all compounds measured. The highest room-temperature conductivity measured, 270 S/cm, was that of reduced Zn3In2O6.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.1998.tb02483.x
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  • 8
    Electronic Resource
    Electronic Resource
    Defect and Electronic Structures of Calcium-Doped Lanthanum Cuprate (1999)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 82 (1999), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Quenched calcium-doped lanthanum cuprate (La2CuO4) samples were examined at room temperature using extended X-ray absorption fine structure (EXAFS) analysis and X-ray absorption near-edge spectroscopy (XANES) near the CaK edge, and via atomic- and electronic-structure modeling. Calculations and experiments show that the Ca atom, in a manner similar to that of Sr and Ba atoms, replaces the La atom and maintains its nine-fold coordination above the center of a CuO4 square, which is the nominal position of the La atom. In contrast to the Sr and Ba atoms, the distances from Ca to its nearest neighbors are similar to the size of the La3+ cation. The distances that are obtained from the simulation are in reasonable agreement with the experimental results for calcium, as well as previous studies that involved strontium and barium. The binding of a calcium dopant to vacancies on the O(1) sites is stable, but only slightly; therefore, there are probably many different types of such clusters. This calculated binding also is supported by the EXAFS data. The overall electronic structure is similar to that observed in calculations for pure La2CuO4: the LaO planes remain ionic, even with the presence of the calcium dopant, and the Cu-O(1) bond is covalent. The calcium is ionic in character, with a net charge of 1.6, and the narrow Ca 3d band lies ∼6 eV above the Fermi energy level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.1999.tb02103.x
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  • 9
    Electronic Resource
    Electronic Resource
    Subsolidus Phase Relations in the Ga2O3-In2O3-SnO2 System (1998)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 81 (1998), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Subsolidus phase relationships in the Ga2O3–In2O3–SnO2 system were studied by X-ray diffraction over the temperature range 1250–1400°C. At 1250°C, several phases are stable in the ternary system, including Ga2O3(ss), In2O3(ss), SnO2, Ga3−xIn5+xSn2O16, and several intergrowth phases that can be expressed as Ga4−4xIn4xSnn−4O2n−2 where n is an integer. An In2O3–SnO2 phase and Ga4SnO8 form at 1375°C but are not stable at 1250°C. GaInO3 did not form over the temperature range 1000–1400°C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.1998.tb02769.x
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  • 10
    Electronic Resource
    Electronic Resource
    Phase Equilibria in the Ga2O3In2O3 System (1997)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 80 (1997), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Subsolidus phase relationships in the Ga2O3–In2O3 system were studied by X-ray diffraction and electron probe microanalysis (EPMA) for the temperature range of 800°–1400°C. The solubility limit of In2O3 in the β-gallia structure decreases with increasing temperature from 44.1 ± 0.5 mol% at 1000°C to 41.4 ± 0.5 mol% at 1400°C. The solubility limit of Ga2O3 in cubic In2O3 increases with temperature from 4.X ± 0.5 mol% at 1000°C to 10.0 ± 0.5 mol% at 1400°C. The previously reported transparent conducting oxide phase in the Ga-In-O system cannot be GaInO3, which is not stable, but is likely the In-doped β-Ga2O3 solid solution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.1997.tb02820.x
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