Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The homologous compounds In1−xGa1+xO3(ZnO)k (where k= 1, 2, or 3) were prepared at a temperature of 1400°C. The solubility limits (as determined via X-ray diffractometry) were 0.47 〈 [In]/([In] + [Ga]) 〈 0.67 for the k= 1 member, 0.35 〈 [In]/([In]+[Ga]) 〈 0.77 for the k= 2 member, and 0.29 〈 [In]/([In]+[Ga]) 〈 1.00 for the k= 3 member. Four-point-conductivity and diffuse-reflectance measurements were performed on as-fired and reduced samples. The band gap that was determined from diffuse reflectance increased as the Ga3+ content increased and k decreased. The conductivity increased as k decreased and the In3+ content increased. A maximum conductivity of 250 S/cm was obtained for k= 3 and [In]/([In]+[Ga]) = 1 after reduction. The minimum absorption edge of 325 nm was obtained for k= 2 and [In]/([In]+[Ga]) = 0.35 prior to reduction. The potential for metastable phases in the In-Ga-Zn-O system with enhanced transparent-conducting properties has been discussed.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Equilibrium phase relationships in the ZnO-In2O3 system were determined between 1100° and 1400°C using solid-state reaction techniques and X-ray diffractometry. In addition to ZnO and In2O3, nine homologous compounds, ZnkIn2Ok+3 (where k= 3, 4, 5, 6, 7, 9, 11, 13, and 15), were observed. Electrical conductivity and diffuse reflectance of the k= 3, 4, 5, 7 and 11 members were measured before and after annealing at 400°C for 1 h under forming gas (4%2-96% N2). Room-temperature conductivity increased as k decreased, because of increased carrier concentration as well as increased mobility. In general, transparency in the wavelength range of 450-900 nm increased as k increased. Reduction in forming gas resulted in increased conductivity and reduced transparency for all compounds measured. The highest room-temperature conductivity measured, 270 S/cm, was that of reduced Zn3In2O6.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...